2N3904 MMBT3904: NPN General Purpose Amplifier
2N3904 MMBT3904: NPN General Purpose Amplifier
2N3904 MMBT3904: NPN General Purpose Amplifier
2N3904
C C B
MMBT3904
TO-92
E
SOT-23
Mark: 1A
MMPQ3904
B E B E B E B
PZT3904
C
C
SOIC-16
E C B
SOT-223
Parameter
Value
40 60 6.0 200 -55 to +150
Units
V V V mA C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 70 100 60 30 300
VCE(sat) VBE(sat)
0.65
V V V V
SWITCHING CHARACTERISTICS
td tr ts tf Delay Time Rise Time Storage Time Fall Time
(except MMPQ3904)
VCC = 3.0 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1.0 mA VCC = 3.0 V, IC = 10mA IB1 = IB2 = 1.0 mA
35 35 200 50
ns ns ns ns
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
Thermal Characteristics
Symbol
PD Rq JC Rq JA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N3904 625 5.0 83.3 200
Max
*PZT3904 1,000 8.0 125
Units
mW mW/C C/W C/W
Symbol
PD Rq JA
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die
Max
**MMBT3904 350 2.8 357 MMPQ3904 1,000 8.0 125 240
Units
mW mW/C C/W C/W C/W
2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Typical Characteristics
Typical Pulsed Current Gain
- TYPICAL PULSED CURRENT GAIN
vs Collector Current
500
V CE = 5V
400
125 C
300
25 C
0.1
25 C
0.05
- 40 C
FE
10
100
0.1
100
0.8
- 40 C 25 C
0.6
125 C
0.6
125 C
0.4
100
0.2 0.1
100
Typical Characteristics
(continued)
100 10 1 0.1
VCB = 30V
5 4 3 2
C obo C ibo
25
150
1 0.1
100
V CE = 5.0V 10
I C = 5.0 mA
8 6 4 2 0 0.1
I C= 50 A
I C= 100 A
1 10 f - FREQUENCY (kHz)
100
1 10 R S - SOURCE RESISTANCE ( k )
Pr23
100
SOT-223
0.75
TO-92
0.5
- DEGREES
SOT-23
0.25
fe
25
50 75 100 o TEMPERATURE ( C)
125
150
Typical Characteristics
(continued)
Ic 10
100
T J = 125C
T J = 25C
10
100
100
VCC = 40V
100
T J = 125C
100
T J = 25C
100
Test Circuits
3.0 V
275
10 K C 1 < 4.0 pF
t1 10.9 V 275
1N916
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