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    2N918 NPN Silicon RF Transistor Description

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    jordan
    The 2N918 is an NPN silicon RF transistor designed for high frequency amplifier and oscillator applications. It is manufactured using the epitaxial planar process. The transistor has a maximum collector current of 50 mA, power dissipation of 200 mW, and operates within a junction temperature range of -65 to +200 degrees Celsius. It provides characteristics suitable for RF applications such as a current gain of 20, transition frequency of 600 MHz, and power output of 30 mW.

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    2N918 NPN Silicon RF Transistor Description

    Uploaded by

    jordan
    20 views2 pages
    The 2N918 is an NPN silicon RF transistor designed for high frequency amplifier and oscillator applications. It is manufactured using the epitaxial planar process. The transistor has a maximum collector current of 50 mA, power dissipation of 200 mW, and operates within a junction temperature range of -65 to +200 degrees Celsius. It provides characteristics suitable for RF applications such as a current gain of 20, transition frequency of 600 MHz, and power output of 30 mW.

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    The 2N918 is an NPN silicon RF transistor designed for high frequency amplifier and oscillator applications. It is manufactured using the epitaxial planar process. The transistor has a maximum collector current of 50 mA, power dissipation of 200 mW, and operates within a junction temperature range of -65 to +200 degrees Celsius. It provides characteristics suitable for RF applications such as a current gain of 20, transition frequency of 600 MHz, and power output of 30 mW.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views2 pages

    2N918 NPN Silicon RF Transistor Description

    Uploaded by

    jordan
    The 2N918 is an NPN silicon RF transistor designed for high frequency amplifier and oscillator applications. It is manufactured using the epitaxial planar process. The transistor has a maximum collector current of 50 mA, power dissipation of 200 mW, and operates within a junction temperature range of -65 to +200 degrees Celsius. It provides characteristics suitable for RF applications such as a current gain of 20, transition frequency of 600 MHz, and power output of 30 mW.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N918

    NPN SILICON RF TRANSISTOR

    w w w. c e n t r a l s e m i . c o m

    DESCRIPTION:
    The CENTRAL SEMICONDUCTOR 2N918 type
    is an NPN silicon RF transistor, manufactured by
    the epitaxial planar process and designed for high
    frequency amplifier and oscillator applications.
    MARKING: FULL PART NUMBER

    TO-72 CASE
    MAXIMUM RATINGS: (TA=25C unless otherwise noted)
    SYMBOL
    Collector-Base Voltage
    VCBO
    Collector-Emitter Voltage
    VCEO

    15

    Emitter-Base Voltage

    VEBO
    IC

    3.0

    50

    mA

    PD
    PD

    200

    mW

    300

    mW

    -65 to +200

    Thermal Resistance

    TJ, Tstg
    JA

    87.5

    C/W

    Thermal Resistance

    JC

    58.3

    C/W

    MAX
    10

    UNITS
    nA

    1.0

    Continuous Collector Current


    Power Dissipation
    Power Dissipation (TC=25C)
    Operating and Storage Junction Temperature

    30

    UNITS
    V

    ELECTRICAL
    SYMBOL
    ICBO
    ICBO

    CHARACTERISTICS: (TA=25C unless otherwise noted)


    TEST CONDITIONS
    MIN
    VCB=15V
    VCB=15V, TA=150C

    BVCBO

    IC=1.0A

    30

    BVCEO

    IC=3.0mA

    15

    BVEBO

    IE=10A

    3.0

    VCE(SAT)

    IC=10mA, IB=1.0mA

    0.4

    VBE(SAT)

    IC=10mA, IB=1.0mA

    1.0

    hFE
    fT

    VCE=1.0V, IC=3.0mA
    VCE=10V, IC=4.0mA, f=100MHz

    Cob
    Cob

    VCB=10V, IE=0, f=1.0MHz


    VEB=0, IE=0, f=1.0MHz

    1.7
    3.0

    pF

    Cib

    VEB=0.5V, IC=0, f=1.0MHz


    VCB=15V, IC=8.0mA, f=500MHz

    2.0

    pF

    Po
    Gpe

    NF

    VCB=12V, IC=6.0mA, f=200MHz


    VCB=15V, IC=8.0mA, f=500MHz
    VCE=6.0V, IC=1.0mA,
    RG=400, f=60kHz

    20
    600

    MHz
    pF

    30

    mW

    15

    dB

    25

    %
    6.0

    dB

    R1 (11-September 2012)

    2N918
    NPN SILICON RF TRANSISTOR

    TO-72 CASE - MECHANICAL OUTLINE

    LEAD CODE:
    1) Emitter
    2) Base
    3) Collector
    4) Case
    MARKING:
    FULL PART NUMBER

    R1 (11-September 2012)
    w w w. c e n t r a l s e m i . c o m

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