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    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Zhou Dram Dram
    This document provides the product specification for Inchange Semiconductor's 2SC2553 silicon NPN power transistor. Key details include: - It has a TO-220C package, breakdown voltage of 400V minimum, and excellent switching times of 1.0us maximum for rise and fall times. - It is intended for applications like switching regulators, high voltage switching, high speed DC-DC converters. - Absolute maximum ratings include collector-emitter voltage of 500V, collector current of 5A, and junction temperature of 150°C. - Characteristics include collector-emitter saturation voltage of 1V maximum, DC current gain of 100 minimum, and switching times of 1.0us

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Zhou Dram Dram
    29 views4 pages
    This document provides the product specification for Inchange Semiconductor's 2SC2553 silicon NPN power transistor. Key details include: - It has a TO-220C package, breakdown voltage of 400V minimum, and excellent switching times of 1.0us maximum for rise and fall times. - It is intended for applications like switching regulators, high voltage switching, high speed DC-DC converters. - Absolute maximum ratings include collector-emitter voltage of 500V, collector current of 5A, and junction temperature of 150°C. - Characteristics include collector-emitter saturation voltage of 1V maximum, DC current gain of 100 minimum, and switching times of 1.0us

    Original Title

    Datasheet 2SC2553

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    © Attribution Non-Commercial (BY-NC)

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    This document provides the product specification for Inchange Semiconductor's 2SC2553 silicon NPN power transistor. Key details include: - It has a TO-220C package, breakdown voltage of 400V minimum, and excellent switching times of 1.0us maximum for rise and fall times. - It is intended for applications like switching regulators, high voltage switching, high speed DC-DC converters. - Absolute maximum ratings include collector-emitter voltage of 500V, collector current of 5A, and junction temperature of 150°C. - Characteristics include collector-emitter saturation voltage of 1V maximum, DC current gain of 100 minimum, and switching times of 1.0us

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views4 pages

    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Zhou Dram Dram
    This document provides the product specification for Inchange Semiconductor's 2SC2553 silicon NPN power transistor. Key details include: - It has a TO-220C package, breakdown voltage of 400V minimum, and excellent switching times of 1.0us maximum for rise and fall times. - It is intended for applications like switching regulators, high voltage switching, high speed DC-DC converters. - Absolute maximum ratings include collector-emitter voltage of 500V, collector current of 5A, and junction temperature of 150°C. - Characteristics include collector-emitter saturation voltage of 1V maximum, DC current gain of 100 minimum, and switching times of 1.0us

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    DESCRIPTION With TO-220C package High collector breakdown voltage : VCEO=400V(Min) Excellent switching time : tr=1.0 s(Max.) : tf=1.0 s(Max.@IC=4A APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications
    PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION

    2SC2553

    Absolute maximum ratings(Ta=25 )


    SYMBOL VCBO VCEO VEBO IC IB

    IN

    Emitter


    PARAMETER

    Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current

    CHA

    E SEM NG
    Open base

    OND IC
    CONDITIONS

    TOR UC
    VALUE 500 400 7 5 1 UNIT V V V A A

    Open emitter

    Open collector

    Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature

    1.5 W 40 150 -55~150

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=400V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=5A ; VCE=5V 12 8 MIN 400 500 TYP.

    2SC2553

    SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2

    MAX

    UNIT V V

    1.0 1.5 100 1

    V V A mA

    Switching times tr tstg tf

    Rise time Fall time

    CHA IN
    Storage time

    E SEM NG

    VCC 200V; IC=4A IB1=-IB2=0.4A;RL=50 Duty cycle 1%

    OND IC

    TOR UC
    1.0 2.5 1.0 s s s

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    2SC2553

    CHA IN

    E SEM NG

    OND IC

    TOR UC

    Fig.2 Outline dimensions (unindicated tolerance:

    0.10 mm)

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors

    2SC2553

    CHA IN

    E SEM NG

    OND IC

    TOR UC

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