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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


DESCRIPTION With TO-3PML package High speed High breakdown voltage Built-in damper diode APPLICATIONS Color TV horizontal output application

2SD5072

"

PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
B C E

Absolute maximum ratings(Ta=25 )


SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 800 6 5 16 60 150 -50~150 UNIT V V V A A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage Fall time CONDITIONS IC=4 A;IB=0.8A IC=4 A;IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=5A IC=4A;RL=50=;VCC=200V IB1=0.8A;IB2=-1.6A 40 8 3 MIN

2SD5072

SYMBOL VCEsat VBEsat ICBO IEBO hFE fT VF tf

TYP.

MAX 5.0 1.5 10 200

UNIT V V A mA

MHz 2.0 0.4 V s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2SD5072

Fig.2 Outline dimensions

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