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    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Alejandro Borrego Dominguez
    The document provides the product specification for the 2SC1894 silicon NPN power transistor from Inchange Semiconductor. Key details include: - It has a TO-3 package and is intended for use in color TV horizontal output applications. - The transistor has a collector-emitter sustaining voltage of 600V minimum, collector-emitter saturation voltage of 5V maximum, and DC current gain of 10-40. - The document outlines the transistor's absolute maximum ratings, characteristics, and TO-3 package outline dimensions.

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    © All Rights Reserved
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    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Alejandro Borrego Dominguez
    40 views3 pages
    The document provides the product specification for the 2SC1894 silicon NPN power transistor from Inchange Semiconductor. Key details include: - It has a TO-3 package and is intended for use in color TV horizontal output applications. - The transistor has a collector-emitter sustaining voltage of 600V minimum, collector-emitter saturation voltage of 5V maximum, and DC current gain of 10-40. - The document outlines the transistor's absolute maximum ratings, characteristics, and TO-3 package outline dimensions.

    Original Description:

    2SC1894

    Original Title

    2SC1894

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    The document provides the product specification for the 2SC1894 silicon NPN power transistor from Inchange Semiconductor. Key details include: - It has a TO-3 package and is intended for use in color TV horizontal output applications. - The transistor has a collector-emitter sustaining voltage of 600V minimum, collector-emitter saturation voltage of 5V maximum, and DC current gain of 10-40. - The document outlines the transistor's absolute maximum ratings, characteristics, and TO-3 package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    40 views3 pages

    固电半导体 Inchange Semiconductor: Silicon NPN Power Transistors

    Uploaded by

    Alejandro Borrego Dominguez
    The document provides the product specification for the 2SC1894 silicon NPN power transistor from Inchange Semiconductor. Key details include: - It has a TO-3 package and is intended for use in color TV horizontal output applications. - The transistor has a collector-emitter sustaining voltage of 600V minimum, collector-emitter saturation voltage of 5V maximum, and DC current gain of 10-40. - The document outlines the transistor's absolute maximum ratings, characteristics, and TO-3 package outline dimensions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor

    Product Specification

    2SC1894

    Silicon NPN Power Transistors

    DESCRIPTION
    With TO-3 package
    High breakdown voltage
    Low collector saturation voltage
    APPLICATIONS
    For color TV horizontal output applications
    PINNING(see Fig.2)
    PIN

    DESCRIPTION

    Base

    Emitter

    Collector

    Fig.1 simplified outline (TO-3) and symbol

    Absolute maximum ratings(Ta=)


    SYMBOL
    VCBO
    VCEO
    VEBO

    PARAMETER

    Collector-base voltage

    VALUE

    UNIT

    Open emitter

    1500

    Open base

    600

    50

    M
    E
    S
    GE

    N
    A
    H
    INC
    Collector-emitter voltage

    D
    N
    O
    IC

    Emitter-base voltage

    R
    O
    T
    UC

    CONDITIONS

    Open collector

    IC

    Collector current

    PC

    Collector power dissipation

    Tj

    Junction temperature

    150

    Tstg

    Storage temperature

    -55~150

    TC=25

    Inchange Semiconductor

    Product Specification

    2SC1894

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25 unless otherwise specified
    SYMBOL

    PARAMETER

    VCEO(SUS)

    Collector-emitter sustaining voltage

    IC=0.1A ;IB=0

    600

    V(BR)EBO

    Emitter-base breakdown voltage

    IE=1mA ;IC=0

    VCEsat

    Collector-emitter saturation voltage

    IC=4A; IB=0.8A

    5.0

    VBEsat

    Base-emitter saturation voltage

    IC=4A; IB=0.8A

    1.5

    ICBO

    Collector cut-off current

    VCB=750V; IE=0

    50

    IEBO

    Emitter cut-off current

    VEB=5V; IC=0

    50

    hFE

    DC current gain

    IC=1A ; VCE=5V

    Transition frequency

    IC=0.1A ; VCE=10V

    Collector output capacitance

    IE=0; VCB=10V;f=1MHz

    fT
    COB

    CONDITIONS

    IN

    TYP.

    10

    MAX

    UNIT

    40

    TOR

    MHz

    155

    pF

    C
    U
    D
    ON

    IC
    M
    E
    ES

    G
    N
    A
    CH

    MIN

    Inchange Semiconductor

    Product Specification

    2SC1894

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    R
    O
    T
    UC

    D
    N
    O
    IC

    M
    E
    S
    GE

    N
    A
    H
    INC

    Fig.2 outline dimensions (unindicated tolerance:0.1mm)

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