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    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

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    ofmoto
    This document provides the product specification for the Inchange Semiconductor 2SC3893 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package and built-in damper diode for high voltage, high speed applications like horizontal deflection output displays. - Absolute maximum ratings include collector-base voltage of 1400V, collector current of 8A, and junction temperature of 150°C. - Typical characteristics are collector-emitter saturation voltage of 5V at 6A collector current, DC current gain of 8-12 at 1A collector current, and collector output capacitance of 210pF. - The package outline diagram shows the transistor

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    ofmoto
    30 views3 pages
    This document provides the product specification for the Inchange Semiconductor 2SC3893 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package and built-in damper diode for high voltage, high speed applications like horizontal deflection output displays. - Absolute maximum ratings include collector-base voltage of 1400V, collector current of 8A, and junction temperature of 150°C. - Typical characteristics are collector-emitter saturation voltage of 5V at 6A collector current, DC current gain of 8-12 at 1A collector current, and collector output capacitance of 210pF. - The package outline diagram shows the transistor

    Original Title

    2SC3893A

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    © Attribution Non-Commercial (BY-NC)

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    This document provides the product specification for the Inchange Semiconductor 2SC3893 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package and built-in damper diode for high voltage, high speed applications like horizontal deflection output displays. - Absolute maximum ratings include collector-base voltage of 1400V, collector current of 8A, and junction temperature of 150°C. - Typical characteristics are collector-emitter saturation voltage of 5V at 6A collector current, DC current gain of 8-12 at 1A collector current, and collector output capacitance of 210pF. - The package outline diagram shows the transistor

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views3 pages

    Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

    Uploaded by

    ofmoto
    This document provides the product specification for the Inchange Semiconductor 2SC3893 silicon NPN power transistor. Key details include: - It has a TO-3P(H)IS package and built-in damper diode for high voltage, high speed applications like horizontal deflection output displays. - Absolute maximum ratings include collector-base voltage of 1400V, collector current of 8A, and junction temperature of 150°C. - Typical characteristics are collector-emitter saturation voltage of 5V at 6A collector current, DC current gain of 8-12 at 1A collector current, and collector output capacitance of 210pF. - The package outline diagram shows the transistor

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors

    2SC3893

    DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display
    PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

    Absolute maximum ratings (Ta=25)


    SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1400 600 5 8 15 4 50 150 -55~150 UNIT V V V A A A W

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

    2SC3893

    TYP.

    MAX

    UNIT

    V(BR)EBO

    Emitter-base breakdown voltage

    IE=200mA , IC=0

    VCEsat VBEsat

    Collector-emitter saturation voltage

    IC=6A ;IB=1.5A IC=6A ;IB=1.5A

    5.0

    Base-emitter saturation voltage

    1.5

    V A

    ICBO

    Collector cut-off current

    VCB=500V; IE=0

    10

    IEBO

    Emitter cut-off current

    VEB=5V; IC=0

    66

    200

    mA

    hFE

    DC current gain

    IC=1A ; VCE=5V

    12

    fT

    Transition frequency

    IC=0.1A ; VCE=10V

    MHz

    COB

    Collector output capacitance

    IE=0 ; VCB=10V;f=1MHz IF=6A

    210

    pF

    VF ts

    Diode forward voltage

    2.0

    V s s

    Storage time

    tf

    Fall time

    Resistive load ICP=6A ;IB1=1.2A;IB2=-2.4A RL=33.3

    2.5

    0.2

    Inchange Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    2SC3893

    Fig.2 Outline dimensions (unindicated tolerance:0.15 mm)

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