Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
Silicon NPN Power Transistors: Savantic Semiconductor Product Specification
SavantIC Semiconductor
Product Specification
2SD5072
DESCRIPTION
Base
Collector
Emitter
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
VCEO
Collector-emitter voltage
Open base
800
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
16
PC
60
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
TC=25
SavantIC Semiconductor
Product Specification
2SD5072
SYMBOL
PARAMETER
MAX
UNIT
VCEsat
IC=4 A;IB=0.8A
5.0
VBEsat
IC=4 A;IB=0.8A
1.5
ICBO
VCB=800V; IE=0
10
IEBO
VEB=4V; IC=0
40
200
mA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
VF
IF=5A
2.0
Fall time
IC=4A;RL=50=;VCC=200V
IB1=0.8A;IB2=-1.6A
0.4
tf
CONDITIONS
MIN
TYP.
MHz
SavantIC Semiconductor
Product Specification
2SD5072