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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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SavantIC Semiconductor

Product Specification

2SD5072

Silicon NPN Power Transistors


DESCRIPTION
With TO-3PML package
High speed
High breakdown voltage
Built-in damper diode
APPLICATIONS
Color TV horizontal output application
PINNING
PIN

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3PML) and symbol

Absolute maximum ratings(Ta=25 )


SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1500

VCEO

Collector-emitter voltage

Open base

800

VEBO

Emitter-base voltage

Open collector

IC

Collector current

ICM

Collector current-peak

16

PC

Collector power dissipation

60

Tj

Junction temperature

150

Tstg

Storage temperature

-50~150

TC=25

SavantIC Semiconductor

Product Specification

2SD5072

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25

unless otherwise specified

SYMBOL

PARAMETER

MAX

UNIT

VCEsat

Collector-emitter saturation voltage

IC=4 A;IB=0.8A

5.0

VBEsat

Base-emitter saturation voltage

IC=4 A;IB=0.8A

1.5

ICBO

Collector cut-off current

VCB=800V; IE=0

10

IEBO

Emitter cut-off current

VEB=4V; IC=0

40

200

mA

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

IF=5A

2.0

Fall time

IC=4A;RL=50=;VCC=200V
IB1=0.8A;IB2=-1.6A

0.4

tf

CONDITIONS

MIN

TYP.

MHz

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

Fig.2 Outline dimensions

2SD5072

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