MPSA18: NPN General Purpose Amplifier

MPSA18
TO-92
BE
NPN General Purpose Amplifier

This device is designed for low noise, high gain, applications at
collector currents from 1 A to 50 mA. Sourced from Process
07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
45
VEBO
Emitter-Base Voltage
6.5
IC
Collector Current - Continuous
100
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
Characteristic
RJC
Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Case
RJA
Thermal Resistance, Junction to Ambient
1997 Fairchild Semiconductor Corporation
Max
Units
MPSA18
625
5.0
83.3
mW
mW/C
C/W
200
C/W
MPSA18
Discrete POWER & Signal

Technologies
(continued)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 0
45
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100 A, I E = 0
45
V
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 A, IC = 0
6.5
I CBO
Collector Cutoff Current
VCB = 30 V, IE = 0
50
nA
1500
0.2
0.3
0.7
V
V
V
pF
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat )
Collector-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 A
VCE = 5.0 V, IC = 100 A
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
I C = 10 mA, I B = 0.5 mA
I C = 50 mA, I B = 5.0 mA
VCE = 5.0 V, IC = 1.0 mA
400
500
500
500
SMALL SIGNAL CHARACTERISTICS

Ccb
Collector-Base Capacitance
VCB = 5.0 V, f = 1.0 MHz
3.0
Ceb
Emitter-Base Capacitance
VEB = 0.5 V, f = 1.0 MHz
6.5
fT
Current Gain - Bandwidth Product
NF
Noise Figure
IC = 1.0 mA, VCE = 5.0 V,

f = 100 MHz
VCE = 5.0 V, I C = 100 A,
RS = 10 k, f = 1.0 kHz,
*Pulse Test: Pulse Width 300
s, Duty Cycle 2.0%
100
pF
MHz
1.5
dB
MPSA18
NPN General Purpose Amplifier

MPSA18: NPN General Purpose Amplifier

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MPSA18: NPN General Purpose Amplifier

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MPSA18

NPN General Purpose Amplifier

Absolute Maximum Ratings*

TA = 25C unless otherwise noted

Collector Current - Continuous

Operating and Storage Junction Temperature Range

TA = 25C unless otherwise noted

Total Device Dissipation

Thermal Resistance, Junction to Ambient

1997 Fairchild Semiconductor Corporation

Discrete POWER & Signal

TA = 25C unless otherwise noted

Collector-Emitter Breakdown Voltage*

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Collector-Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

VCB = 5.0 V, f = 1.0 MHz

VEB = 0.5 V, f = 1.0 MHz

Current Gain - Bandwidth Product

IC = 1.0 mA, VCE = 5.0 V,

*Pulse Test: Pulse Width 300

s, Duty Cycle 2.0%

NPN General Purpose Amplifier

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