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    2sc2528 PDF

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    Venu Gopal Rao Aggress
    This document provides information about the isc Silicon NPN Power Transistor 2SC2528. It lists the transistor's key electrical characteristics including a collector-emitter breakdown voltage of 120V minimum and collector-emitter saturation voltage of 1.0V maximum at 0.7A collector current. The transistor is intended for applications such as high frequency power amplifiers, audio power amplifiers, and drivers. It has an absolute maximum junction temperature of 150°C.

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    2sc2528 PDF

    Uploaded by

    Venu Gopal Rao Aggress
    14 views2 pages
    This document provides information about the isc Silicon NPN Power Transistor 2SC2528. It lists the transistor's key electrical characteristics including a collector-emitter breakdown voltage of 120V minimum and collector-emitter saturation voltage of 1.0V maximum at 0.7A collector current. The transistor is intended for applications such as high frequency power amplifiers, audio power amplifiers, and drivers. It has an absolute maximum junction temperature of 150°C.

    Original Description:

    NPN Audio High power Transistor

    Original Title

    2sc2528.pdf

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    This document provides information about the isc Silicon NPN Power Transistor 2SC2528. It lists the transistor's key electrical characteristics including a collector-emitter breakdown voltage of 120V minimum and collector-emitter saturation voltage of 1.0V maximum at 0.7A collector current. The transistor is intended for applications such as high frequency power amplifiers, audio power amplifiers, and drivers. It has an absolute maximum junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views2 pages

    2sc2528 PDF

    Uploaded by

    Venu Gopal Rao Aggress
    This document provides information about the isc Silicon NPN Power Transistor 2SC2528. It lists the transistor's key electrical characteristics including a collector-emitter breakdown voltage of 120V minimum and collector-emitter saturation voltage of 1.0V maximum at 0.7A collector current. The transistor is intended for applications such as high frequency power amplifiers, audio power amplifiers, and drivers. It has an absolute maximum junction temperature of 150°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    isc Silicon NPN Power Transistor 2SC2528

    DESCRIPTION
    ·Collector-Emitter Breakdown Voltage-
    : V(BR)CEO= 120V(Min)
    ·Low Collector-Emitter Saturation Voltage-
    : VCE(sat)= 1.0V(Max) @IC= 0.7A
    ·Complement to Type 2SA1078
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·High frequency power amplifier,
    Audio power amplifier
    Dirvers

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 120 V

    VCEO Collector-Emitter Voltage 120 V

    VEBO Emitter-Base Voltage 6 V

    IC Collector Current-Continuous 2.0 A

    Collector Power Dissipation


    PC 25 W
    @ TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -65~150 ℃

    isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SC2528

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 120 V

    V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 6 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A 1.0 V

    VBE(on) Base-Emitter On Voltage IC= 0.7A ; VCE= 5V 1.7 V

    ICBO Collector Cutoff Current VCB= 120V ; IE= 0 1 μA

    IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1 μA

    hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V 60 350

    hFE-2 DC Current Gain IC= 0.7A ; VCE= 5V 50

    fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V;ftest= 10MHz 60 MHz

    COB Output Capacitance IE= 0; VCB= 20V;ftest= 1.0MHz 60 pF

    Notice：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark

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