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    2sd1265 PDF

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    J Alex Soto M
    This document provides information on the isc Silicon NPN Power Transistor 2SD1265. It has a low collector saturation voltage of 1.0V maximum at 2A collector current. It has a collector-emitter sustaining voltage of 60V minimum and is designed for power amplification applications with a wide area of safe operation and minimum lot-to-lot variations.

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    2sd1265 PDF

    Uploaded by

    J Alex Soto M
    22 views2 pages
    This document provides information on the isc Silicon NPN Power Transistor 2SD1265. It has a low collector saturation voltage of 1.0V maximum at 2A collector current. It has a collector-emitter sustaining voltage of 60V minimum and is designed for power amplification applications with a wide area of safe operation and minimum lot-to-lot variations.

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    This document provides information on the isc Silicon NPN Power Transistor 2SD1265. It has a low collector saturation voltage of 1.0V maximum at 2A collector current. It has a collector-emitter sustaining voltage of 60V minimum and is designed for power amplification applications with a wide area of safe operation and minimum lot-to-lot variations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    22 views2 pages

    2sd1265 PDF

    Uploaded by

    J Alex Soto M
    This document provides information on the isc Silicon NPN Power Transistor 2SD1265. It has a low collector saturation voltage of 1.0V maximum at 2A collector current. It has a collector-emitter sustaining voltage of 60V minimum and is designed for power amplification applications with a wide area of safe operation and minimum lot-to-lot variations.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    isc Silicon NPN Power Transistor 2SD1265

    DESCRIPTION
    ·Low Collector Saturation Voltage
    : VCE(sat)= 1.0V(Max)@ IC= 2A
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS)= 60V (Min)
    ·Wide Area of Safe Operation
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for power amplification.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 60 V

    VCEO Collector-Emitter Voltage 60 V

    VEBO Emitter-Base Voltage 8 V

    IC Collector Current-Continuous 4 A

    ICM Collector Current-Peak 6 A

    IB Base Current-Continuous 1 A

    Collector Power Dissipation


    30
    @ TC=25℃
    PC W
    Collector Power Dissipation
    2
    @ Ta=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon NPN Power Transistor 2SD1265

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; L= 25mH 60 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V

    VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 3V 1.2 V

    ICEO Collector Cutoff Current VCE= 20V; IB= 0 30 μA

    IEBO Emitter Cutoff Current VEB= 8V; IC= 0 1.0 mA

    hFE-1 DC Current Gain IC= 0.1A; VCE= 3V 40

    hFE-2 DC Current Gain IC= 1A; VCE= 3V 30 160

     hFE-1 classifications

    Q P P

    30-60 50-100 80-160

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not designed
    for use in equipment which require specialized quality and/or reliability, or in equipment which
    could have applications in hazardous environments, aerospace industry, or medical field. Please
    contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.
    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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