Kps 2222a
Kps 2222a
Kps 2222a
tm
1 2 3
Symbol
VCBO
VCEO
VEBO
IC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction Temperature
Storage Temperature
Value
Units
75
40
6.0
600
+150
-55 ~ +150
V
V
V
mA
C
C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
PC
RJC
RJA
Parameter
Collector Power Dissipation, by RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics * T
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
Max
Units
625
83.3
200
mW
C/W
C/W
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCE(sat)
VBE(sat)
fT
Cobo
tON
tOFF
NF
Noise Figure
Test Condition
Min.
IC = 10A, IE = 0
IC = 10mA, IB = 0
IE = 10A, IC = 0
VCB = 60V, IE = 0
VEB = 3.0V, IC = 0
VCE = 10V, IC = 0.1mA,
VCE = 10V, IC = 1mA,
VCE = 10V, IC = 10mA,
VCE = 10V, IC = 150mA,
VCE = 10V, IC = 500mA,
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 20mA, VCE = 20V, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
VCC= 30V, IC = 150mA,
IB1= 15mA, VBE(off)= 0.5V
VCC= 30V, IC = 150mA,
IB1= IB1 = 15mA
IC = 100A, VCE= 10V,
RS= 1K , f = 1.0KHz
75
40
6.0
Typ.
35
50
75
100
40
Max.
Units
0.01
10
V
V
V
A
nA
300
0.6
0.3
1
1.2
2.0
8
35
V
V
V
V
MHz
pF
ns
285
ns
dB
300
KSP2222A Rev. B
www.fairchildsemi.com
July 2006
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
(0.25)
+0.10
0.38 0.05
0.38 0.05
0.20
3.86MAX
3.60
1.02 0.10
+0.10
1.27TYP
[1.27 0.20]
(R2.29)
Dimensions in Millimeters
2
KSP2222A Rev. B
www.fairchildsemi.com
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Rev. I20