NPN Epitaxial Silicon Transistor: 1W Output Amplifier of Potable Radios in Class B Push-Pull Operation

SS9013
SS9013
1W Output Amplifier of Potable Radios in Class B Push-pull Operation.
High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity.
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 20 5 500 625 150 -55 ~ 150 Units V V V mA mW C C
Electrical Characteristics Ta=25C unless otherwise noted

Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) VBE (on) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC =100A, IE =0 IC =1mA, IB =0 IE =100A, IC =0 VCB =25V, IE =0 VEB =3V, IC =0 VCE =1V, IC =50mA VCE =1V, IC =500mA IC =500mA, IB =50mA IC =500mA, IB =50mA VCE =1V, IC =10mA 0.6 64 40 120 120 0.16 0.91 0.67 Min. 40 20 5 100 100 202 0.6 1.2 0.7 V V V Typ. Max. Units V V V nA nA
hFE Classification
Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144 ~ 202
2002 Fairchild Semiconductor Corporation
Rev. A3, May 2002
SS9013
Typical Characteristics
20 18
IB = 160A
1000
IB = 140A IB = 120A IB = 100A IB = 80A IB = 60A IB = 40A IB = 20A

1
VCE = 1V
IC [mA], COLLECTOR CURRENT
16 14 12 10 8 6 4 2 0 0 10 20 30
hFE, DC CURRENT GAIN
100
10
40
50
10
100
1000
10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE
10000
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC = 10 IB
1000
VCE = 6V
1000
100
VBE (sat)
100
10
VCE (sat)
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
Rev. A3, May 2002
SS9013
Package Demensions
TO-92
4.58 0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60

0.20
1.27TYP [1.27 0.20]
0.38 0.05
+0.10
3.86MAX
1.02 0.10
0.38 0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. A3, May 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series
FAST FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak
MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series
SLIENT SWITCHER SMART START SPM STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation
UHC UltraFET VCX
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H5
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

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SS9013

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Electrical Characteristics Ta=25C unless otherwise noted

2002 Fairchild Semiconductor Corporation

Rev. A3, May 2002

IB = 140A IB = 120A IB = 100A IB = 80A IB = 60A IB = 40A IB = 20A

IC [mA], COLLECTOR CURRENT

hFE, DC CURRENT GAIN

VCE [V], COLLECTOR-EMITTER VOLTAGE

IC [mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

10 1 10 100 1000 10000

1 1 10 100 1000 10000

IC [mA], COLLECTOR CURRENT

IC [mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Current Gain Bandwidth Product

2002 Fairchild Semiconductor Corporation

Rev. A3, May 2002

1.27TYP [1.27 0.20] 3.60

1.27TYP [1.27 0.20]

UHC UltraFET VCX

STAR*POWER is used under license

LIFE SUPPORT POLICY

PRODUCT STATUS DEFINITIONS Definition of Terms

2002 Fairchild Semiconductor Corporation

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