Transistor de Potencia
Transistor de Potencia
Transistor de Potencia
BC213L
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
See PN200 for Characteristics.
TO-92
Collector-Emitter Voltage
Parameter
Value
-30
VCBO
Collector-Base Voltage
-45
VEBO
Emitter-Base Voltage
-5.0
IC
-500
mA
TJ, TSTG
- 55 ~ 150
- Continuous
Units
V
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Voltage
IC = -2mA, IB = 0
-30
V(BR)CBO
Collector-Base Voltage
IC = -10A, IE = 0
-45
V
V
V(BR)EBO
Emitter-Base Voltage
IE = -10A, IC = 0
-5.0
ICBO
VCB = -30V, IE = 0
-15
nA
IEBO
VEB = -4.0V, IC = 0
-15
nA
On Characteristics *
hFE
DC Current Gain
VCE(sat)
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
40
80
400
-0.25
-0.6
VBE(sat)
IC = -100mA, IB = -5.0mA
VBE(on)
Base-Emitter On Voltage
-0.6
200
-1.1
-0.72
NF
Noise Figure
hfe
MHz
10
dB
80
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25C
Max.
625
5.0
Units
mW
mW/C
RJC
83.3
C/W
RJA
200
C/W
BC213L
BC213L
Package Dimensions
TO-92
+0.25
4.58 0.20
4.58 0.15
0.10
14.47 0.40
0.46
1.27TYP
[1.27 0.20]
1.27TYP
[1.27 0.20]
0.20
(0.25)
+0.10
0.38 0.05
1.02 0.10
3.86MAX
3.60
+0.10
0.38 0.05
(R2.29)
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation
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Rev. I1