J212 PDF
J212 PDF
J212 PDF
S
G
TO-92
SOT-23
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Parameter
Value
Units
25
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
- 25
IGF
10
mA
TJ ,Tstg
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
Max
Characteristic
RJC
RJA
J210-212
350
2.8
125
*MMBFJ210-212
225
1.8
357
556
Units
mW
mW/C
C/W
C/W
J210/J211/J212/MMBFJ210/J211/J212, Rev A
MMBFJ210
MMBFJ211
MMBFJ212
J210
J211
J212
(continued)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min
Max
Units
- 100
pA
OFF CHARACTERISTICS
V (BR)GSS
IG S S
I G = 1.0 A, V DS = 0
V G S = 15 V, V D S = 0
V GS(off)
V D S = 15 V, I D = 1.0 nA
210
211
212
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
V
V
V DS = 15 V, V GS = 0
210
211
212
2.0
7.0
15
15
20
40
mA
mA
mA
4000
6000
7000
12,000
12,000
12,000
200
mhos
mhos
mhos
mhos
- 25
ON CHARACTERISTICS
ID S S
g oss
V D S = 15 V, V G S = 0, f = 1.0 kHz
210
211
212
V D S = 15 V, V G S = 0, f = 1.0 kHz
Typical Characteristics
Parameter Interactions
Common Drain-Source
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
N-Channel RF Amplifier
Transconductance vs.
Drain Current
Output Conductance
vs. Drain Current
(continued)
Typical Characteristics
(continued)
Input Admittance
Output Admittance
os)
Reverse Transadmittance
N-Channel RF Amplifier
(continued)
Output Admittance
Forward Transadmittance
Reverse Transadmittance
N-Channel RF Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC
UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H2