Data Sheet: General Purpose Diode

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAY80 General purpose diode

Product specication Supersedes data of April 1996 1996 Sep 18
Philips Semiconductors
Product specication
General purpose diode

FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 50 ns General application Continuous reverse voltage: max. 120 V Repetitive peak reverse voltage: max. 150 V Repetitive peak forward current: max. 625 mA. APPLICATIONS Switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.
handbook, halfpage k
BAY80
DESCRIPTION The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
MAM246
The diode is type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 65 9 3 1 400 +175 175 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. MAX. 150 120 250 625 V V mA mA UNIT
1996 Sep 18
Product specication

ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specied. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 0.1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 150 mA IR reverse current see Fig.5 VR = 120 V VR = 120 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA; see Fig.7 100 100 6 50 450 650 730 780 550 800 920 1000 CONDITIONS MIN. MAX.
BAY80
UNIT mV mV mV mV V nA A pF ns
1.07
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 375 UNIT K/W K/W
1996 Sep 18
Product specication

GRAPHICAL DATA
BAY80
handbook, halfpage
300
MBG449
handbook, halfpage
600
MBG460
IF (mA) 200
IF (mA) 400
(1)
(2)
(3)
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2
Device mounted on a FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG703
10
101 1 Based on square wave currents. Tj = 25 C prior to surge. 10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
Product specication
BAY80
103 handbook, halfpage IR (A)
MGD009
MGD005
handbook, halfpage
1.6
10
Cd (pF) 1.4
10 1.2 1
101
1.0
102 0 100 Tj (oC) 200
0.8 0 10 VR (V) 20
VR = 120 V. Solid line; maximum values. Dotted line; typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
1996 Sep 18
Product specication

PACKAGE OUTLINE
BAY80
ook, full pagewidth
0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
MLA428 - 1
Dimensions in mm.
Fig.8 SOD27 (DO-35).
DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
1996 Sep 18

Data Sheet: General Purpose Diode

Uploaded by

Copyright:

Available Formats

Data Sheet: General Purpose Diode

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Data Sheet: General Purpose Diode

Uploaded by

Copyright:

Available Formats

DISCRETE SEMICONDUCTORS

BAY80 General purpose diode

General purpose diode

The diode is type branded.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

General purpose diode

General purpose diode

0 0 100 Tamb (oC) 200

Device mounted on a FR4 printed-circuit board; lead length 10 mm.

Maximum permissible continuous forward current as a function of ambient temperature.

Forward current as a function of forward voltage.

102 handbook, full pagewidth IFSM (A)

101 1 Based on square wave currents. Tj = 25 C prior to surge. 10

General purpose diode

103 handbook, halfpage IR (A)

102 0 100 Tj (oC) 200

VR = 120 V. Solid line; maximum values. Dotted line; typical values.

Reverse current as a function of junction temperature.

Diode capacitance as a function of reverse voltage; typical values.

handbook, full pagewidth

tr D.U.T. 10% SAMPLING OSCILLOSCOPE R = 50 i VR 90%

Fig.7 Reverse recovery voltage test circuit and waveforms.

General purpose diode

ook, full pagewidth

Fig.8 SOD27 (DO-35).

You might also like