A 20dB Variable Gain Amplifier
A 20dB Variable Gain Amplifier
Abstract -- This paper describes a new special purpose [3] except that the gain control part still includes parasi-
Variable Gain Amplifier (VGA) using a standard 1.2 pm tic bipolar devices. The main drawback of the above
digital CMOS process. The new architecture allows the structures, from our application view point, is large
gain to be vaned over a wide range (more than 20dB), power consumption, although they can handle large sig-
while temperature induced drift in gain is kept very nals. For our application, low distortion, low gain-
small over a wide temperature range (5' C to 70' C ) . bandwidth dependency, low gain drift with temperature,
With the new VGA architecture, bandwidth is almost wide bandwidth, and low power consumption were very
independent of gain. Despite low power consumption important goals. Thus, another approach was taken to
(19mW) the circuit has a large bandwidth (27MHz), a meet all these requirements.
high maximum gain (14). and shows low THD (better
than -55dB) over its fill frequency range. The circuit Circuit Design
does not use any capacitor for gain adjustment, thus it is
very compact (0.28 mm x 0.25 mm) and has a large input Gain Adjustment Element
impedance (transistor gate). A simplied schematic that contains element of gain
variation is shown in Fig. 1. It is essentially a folded
Introduction cascode op-amp with current feedback (using a
Gilbert cell as the main mechanism for varying the gain GND
of the VGA. And [41 is essentially a CMOS version of Fig. 1 An amplifier with gain adjustment element
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differential pair). If the open loop gain of the op-amp is V V
dd dd
large and MO is off, then the maximum gain will be
7
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Vdd (dB)
25.00
20.00
15.00
)
10.00
[
bias
5.00
0.00
bias4
--c
%
-5.00
-10.00
-15.00
-20.00
1
bias3 -25.00
GND
Fig. 5 Bias circuit for VGA
Simulation Results
rER=Rl
24.90
24.80 I I I I
24.70
The V G A circuit has been extensively simulated.
Fig. 6 shows the frequency response at different gain 24.60
levels. It shows that the -3dB bandwidth is not affected 24.50
by gain variations. This is a very rare feature.
Bandwidth of most existing architectures, including those 24.40
of some of the references here, is sensitive to gain varia-
24.30
tions. Furthermore, they show peaking in frequency
responge. Peaking very often happens in multistage 24.20
amplifiers, because of parasitic zeros that move with
variation of gain. Small amount of peaking, although 24.10
acceptable in certain applications, must be avoided in 24.00
many other applications. This was an important reason
for adopting the new architecture. Figures 7 and 8 show
the frequency response (at a fixed low and a fixed high (Hz)
gain) for different temperatures. It is achieved due to the Fig. 7 Full gain vs. frequency at 5,25,40,55,70° C
fact that devices which determine the gain are of the Conclusions
same type, and partly by the circuit of Fig. 4. Figure 9
shows the total harmonic distortion (THD) variation A special purpose VGA was described. Its new
versus gain. method of adjusting gain allows special features which
are difficult to achieve using other methods. A feature of
the new architecture is that the gain adjusting element
affects only the transconductance of the input differential
pair, without changing the bias current. The bandwidth
is fairly independent of the gain, and gain is fairly
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independent of the temperature (especially at high gains). (dB)
The power consumption is very low, and the bandwidth 1 .00
is very large. The power consumption of the circuit can
be reduced and the input range can be increased if 0.90
NMOS devices are used. The reason for using PMOS
0.80
devices was to enable the VGA to handle signals down
to ground level. The GBW product of the amplifier 0.70
amounts to 380MHz.
0.60
References 0.50
0.40
[l] C.-C. Shih, K.-K. Lam, K.-L. Lee, and R. W.
Schalk, “A CMOS Analog Front End for a 0.30
9600BPS Facsimile Modem,” in ISSCC Dig. Tech.
Papers, 1987, vol. 30, pp. 300-301. 0.20
[3] T.-W. Pan and A. A. Abidi, “A 50-dB Variable le45 le46 le47 le48 le49
Gain Amplifier Using Parasitic Bipolar Transistors (Hd
in CMOS,” IEEE J. Solid-state Circuits, vol. 24, pp. Fig. 8 Low gain vs. frequency at 5 , 25, 40, 55, 70’ C
951-961, Dec. 1987.
[4] R. Gomez and A. A. Abidi, A 50-MHz Variable
Gain Amplifier for Magnetic Data Storage Systems,“
IEEE J. Solid-state Circuits, vol. 27, pp. 935-939,
Dec. 1992.
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