FQP5N60C / FQPF5N60C: N-Channel QFET Mosfet
FQP5N60C / FQPF5N60C: N-Channel QFET Mosfet
FQP5N60C / FQPF5N60C: N-Channel QFET Mosfet
Thermal Characteristics
FQP5N60C / FQPF5N60C
N-Channel QFET
MOSFET
600 V, 4.5 A, 2.5
Description
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductors proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
4.5 A, 600 V, R
DS(on)
= 2.5 (Max.) @ V
GS
= 10 V,
I
D
= 2.25 A
Low Gate Charge (Typ. 15 nC)
Low Crss (Typ. 6.5 pF)
100% Avalanche Tested
Absolute Maximum Ratings T
C
= 25C unless otherwise noted.
Symbol Parameter FQP5N60C FQPF5N60C Unit
R
JC
Thermal Resistance, Junction-to-Case, Max. 1.25 3.79 C/W
R
CS
Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- C/W
R
JA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 C/W
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
* Drain current limited by maximum junction temperature.
Symbol Parameter FQP5N60C FQPF5N60C Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25C) 4.5 4.5 * A
- Continuous (T
C
= 100C) 2.6 2.6 * A
I
DM
Drain Current - Pulsed (Note 1) 18 18 * A
V
GSS
Gate-Source Voltage 30 V
E
AS
Single Pulsed Avalanche Energy (Note 2) 210 mJ
I
AR
Avalanche Current (Note 1) 4.5 A
E
AR
Repetitive Avalanche Energy (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25C) 100 33 W
- Derate above 25C 0.8 0.26 W/C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
300 C
Package Marking and Ordering Information
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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Electrical Characteristics T
C
= 25C unless otherwise noted.
Part Number Top Mark Package Reel Size Tape Width Quantity
FQP5N60C FQP5N60C TO-220 N/A N/A 50 units
Packing Method
Tube
TO-220F Tube N/A N/A 50 units FQPF5N60C FQPF5N60C
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 18.9 mH, I
AS
= 4.5 A, V
DD
= 50 V, R
G
= 25 , starting T
J
= 25C.
3.I
SD
! 4.5 A, di/dt ! 200 A/s , V
DD
! BV
DSS,
starting T
J
= 25C.
4. Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 A 600 -- -- V
BV
DSS
/ T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 A, Referenced to 25C -- 0.6 -- V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V -- -- 1 A
V
DS
= 480 V, T
C
= 125C -- -- 10 A
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 30 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -30 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 A 2.0 -- 4.0 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 2.25 A -- 2.0 2.5
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 2.25 A -- 4.7 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 515 670 pF
C
oss
Output Capacitance -- 55 72 pF
C
rss
Reverse Transfer Capacitance -- 6.5 8.5 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 4.5
A, R
G
= 25
(Note 4)
-- 10 30 ns
t
r
Turn-On Rise Time -- 42 90 ns
t
d(off)
Turn-Off Delay Time -- 38 85 ns
t
f
Turn-Off Fall Time -- 46 100 ns
Q
g
Total Gate Charge V
DS
= 480 V, I
D
= 4.5 A,
V
GS
= 10 V
(Note 4)
-- 15 19 nC
Q
gs
Gate-Source Charge -- 2.5 -- nC
Q
gd
Gate-Drain Charge -- 6.6 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 4.5 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 4.5 A,
dI
F
/ dt = 100 A/s
-- 300 -- ns
Q
rr
Reverse Recovery Charge -- 2.2 -- C
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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TypicaI Characteristics
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250s Pulse Test
25
I
D
R
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
0 4 12 16
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 4.5A
V
G
S
,
G
a
t
e
-
S
o
u
r
c
e
V
o
l
t
a
g
e
[
V
]
8
Q
G
, Total Gate Charge [nC]
0 2 4 8 6 10
0
1
2
3
4
5
6
V
GS
= 20V
V
GS
= 10V
Note : T
J
=25
R
D
S
(O
N
)
[
]
,
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics
10
-1 0
10
1
0
200
400
600
800
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f =1 MHz
C
rss
C
oss
C
iss
C
a
p
a
c
i
t
a
n
c
e
[
p
F
]
10
V
DS
, Drain-Source Voltage [V]
10
-1 0
10
1
10
-2
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom: 4.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
10
V
DS
, Drain-Source Voltage [V]
8 4 2 10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
=40V
2. 250s Pulse Test
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
6
V
GS
, Gate-Source Voltage [V]
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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Typical Characteristics (Continued)
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100 ms
10s
DC
10ms
1 ms
100 s
OperationinThis Area
is LimitedbyR
DS(on)
Notes :
1. T
C
=25
o
C
2. T
J
=150
o
C
3. SinglePulse
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
100ms
DC
10ms
1 ms
100s
OperationinThis Area
is LimitedbyR
DS(on)
Notes :
1. T
C
=25
o
C
2. T
J
=150
o
C
3. SinglePulse
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FQP5N60C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF5N60C
25 50 75 100 125 150
0
1
2
3
4
5
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
[
A
]
T
C
, Case Temperature []
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
Notes:
1. V
GS
=0V
2. I
D
=250A
B
V
D
S
S
,
(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 2.25 A
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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Typical Characteristics (Continued)
1 0
- 5
1 0
0
1 0
- 4
1 0
- 3
1 0
- 2
1 0
- 1
1 0
1
1 0
- 2
1 0
- 1
1 0
0
N o t e s :
1 . Z
J C
( t ) = 3 . 7 9 / W M a x .
2 . D u t y F a c t o r , D = t
1
/ t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
( t )
s i n g l e p u l s e
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
1 0
- 5
1 0
- 4
1 0
0
1 0
1
1 0
- 2
1 0
- 1
1 0
0
N o t e s :
1 . Z
J C
( t ) = 1 . 2 5 / W M a x .
2 . D u t y F a c t o r , D = t
1
/ t
2
- 3 . T
J M
= T
C
P
D M
* Z
J C
( t )
s e i n g l e p u l s
D = 0 . 5
0 . 0 2
0 . 2
0 . 0 5
0 . 1
0 . 0 1
1 0
- 3
1 0
- 2
1 0
- 1
t
1
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP5N60C
t
1
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF5N60C
t
1
P
DM
t
2
t
1
P
DM
t
2
Z
J
C
(
t
)
,
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
o
C
/
W
]
Z
J
C
(
t
)
,
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
[
o
C
/
W
]
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
V
DS
10%
90%
t
d(on)
t
r
t
on
t
off
t
d(off)
t
f
V
DD
10V
V
DS
R
L
DUT
R
G
V
GS
V
GS
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF 12V
Same Type
as DUT
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
3mA
V
GS
DUT
V
DS
300nF
50K
200nF 12V
Same Type
as DUT
E
AS
= L I
AS
2
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
L
I
D
t
p
E
AS
= L I
AS
2
----
2
1
E
AS
= L I
AS
2
----
2
1
----
2
1
--------------------
BV
DSS
- V
DD
BV
DSS
V
DD
V
DS
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
10V DUT
R
G
LL
I
D
I
D
t
p
V
GS
V
GS
I
G
= const.
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
V
GS
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
-------------------------- D =
Gate Pulse Width
Gate Pulse Period
--------------------------
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com
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Mechanical Dimensions
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com 9
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Mechanical Dimensions
Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003
2003 Fairchild Semiconductor Corporation
FQP5N60C / FQPF5N60C Rev. C1
www.fairchildsemi.com 10
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower
AX-CAP
*
BitSiC
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED
Dual Cool
EcoSPARK
EfficentMax
ESBC
Fairchild
Fairchild Semiconductor
FAST
FastvCore
FETBench
FPS
F-PFS
FRFET
OptoHiT
OPTOLOGIC
OPTOPLANAR
PowerTrench
PowerXS
Programmable Active Droop
QFET
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock
*
TinyBoost
TinyBuck
TinyCalc
TinyLogic
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT
*
SerDes
UHC
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS
F
Q
P
5
N
6
0
C
/
F
Q
P
F
5
N
6
0
C
N
-
C
h
a
n
n
e
l
Q
F
E
T
M
O
S
F
E
T