Reconfigurable High Frequency Class S Power Amplifier Demonstrator
Reconfigurable High Frequency Class S Power Amplifier Demonstrator
Reconfigurable High Frequency Class S Power Amplifier Demonstrator
I. INTRODUCTION
Switch-mode power amplifiers such as class D, E and F
have higher theoretical efficiencies than class A or AB
amplifiers. Because switch-mode PAs are nonlinear they are
not direct replacements for linear PAs, though they can be
used in architectures such as Envelope Elimination and
Restoration (EER), LInear amplification with Nonlinear
Components (LINC) or as is shown here, with based
modulators in what is known as a class S power amplifier.
The Class S architecture in this paper utilizes a current
mode class D (CMCD) switch for the high efficiency switchmode PA stage. This class of power amplifier has published
drain efficiencies of the order of 60%, 63% and 71% for
designs with high power discrete devices [1-3]. Since the
class D amplifier eliminates the envelope of the input signal,
all information in the input signal must be encoded in the
timing of the switch transitions. Maximum transistor
switching frequency remains a major barrier to high
efficiency implementation of the class-S PA architecture and
influences the maximum possible bit rate of the input signal.
The modulation strategy must therefore be optimized for both
cheap implementation on a digital circuit and compatibility as
a drive signal for the available transistor technology.
The type of encoder that can be used is limited due to the
necessity to reconstruct the amplified version of the original
input signal. A direct bandpass modulator can be used as
the encoder as it can convert the modulated carrier signal into
a binary amplitude pulse train for amplification in the class D
switchmode power amplifier stage. Typically, direct
modulation will require a system clock frequency of 4 times
the carrier frequency and circuits have been presented for
carrier frequencies of the order of 2.2 GHz [4].
(1)
1
NTF ( z ) =
1+ H (z)
(2)
P =
Pinband
Ptotal
(3)
Figure 2.
Figure 3.
Direct
930 MHz
3.72 GHz
+ Mixing
930 MHz
98 MHz
180 MHz
57 dB
9 MHz
45 dB
structure used
-20
Power/frequency (dB/Hz)
-40
-60
-80
-100
-120
-140
-160
0
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
Frequency (GHz)
Figure 4. Plot of direct 4th order and 10th order digitally mixed bandpass
modulators (direct approach in black, digitally mixed approach in grey).
-20
-30
Power/frequency (dB/Hz)
-40
-50
-60
-70
-80
-90
-100
-110
-120
0.85
0.9
0.95
Frequency (GHz)
IV
E XPERIMENTAL MEASUREMENTS
Ref
30 dBm
* Att
50 dB
* VBW 2 kHz
Marker 1 [T1 ]
-3.13 dBm
SWT 6.8 s
929.038461538 MHz
[2]
[3]
30
A
20
[4]
1 AP
VIEW
10
-10
[5]
-20
3DB
-30
-40
[6]
-50
-60
[7]
-70
Center
930 MHz
50 MHz/
Span
500 MHz
[8]
CONCLUSIONS
[9]
[10]