ENG325 Semiconductor Devices

Lecture 2
PN Junction in Reverse Bias
Capacitances in PN Junctions

Dr. TOH Eng-Huat

Associate Faculty
School of Science and Technology
SIM University
Email: ehtoh001@unisim.edu.sg
2014
1

Recap Semiconductor with tailored conductivity

Conduction Band

Ec
Top of
Conduction Band

Conduction Band

Eg
Empty

Ec

Eg

Filled
Valence Band

Ev

(a) Semiconductor

Valence Band

(b) Insulator

Ec

Ev

(c) Conductor

Semiconductor

Bandgap: 0 < Eg < 4

Insulator

Bandgap: Eg > 4

Conductor

Bandgap: N.A.

Elements: Si, Ge;

Compounds: GaAs

r > 108 -cm

r < 10-4 -cm

Glass: 1011 -cm,

Diamond: 1014 -cm

Ag: 1.6x10-6 -cm,

Cu: 1.7x10-6 -cm,
Al: 2.7x10-6 -cm

Tailored conductivity
(impurity, temp., illumination,
and magnetic field)

E.-H. Toh ENG325 2014

Recap Donor/Acceptor Impurity and Ef

Introduce Donor/Acceptor impurities change conductivity and Ef.
Fermi-level (Ef): Energy-level at which probability of finding electron = 1/2

Applets:
http://www.acsu.buffalo.edu/~wie/applet/fermi/fermi.html

E.-H. Toh ENG325 2014

Recap Ef, Density of states, f(E), and Conc.

Fermi-level (Ef): Energy-level at which probability of finding electron = 1/2

Applets:
http://www.acsu.buffalo.edu/~wie/applet/fermi/sfw/show.html

E.-H. Toh ENG325 2014

Recap p-type and n-type Semiconductor

: Energy to remove
electron from Ef
p > n

GP III elements: Accept e, free h

-ve immobile charges (eg. B-)
Efp close to Ev
Majority Carries: holes
Minority Carriers: electrons

GP V elements: free e
+ve immobile charges (eg. As+)
Efn close to Ec
Majority Carries: electrons
Minority Carriers: holes
E.-H. Toh ENG325 2014

Recap PN Junction in Equilibrium

Equilibrium Conditions
1. No Light Source
2. Uniform temperature
3. No external applied electric or magnetic fields

Applets:
http://www.acsu.buffalo.edu/~wie/applet/pnformation/pnformation.html
E.-H. Toh ENG325 2014

Recap PN Junction in Equilibrium

p - n:

p - n+:

Wp = Wn
W large
Vo, Eo low

p+ - n:

Wp > Wn
W small
Vo, Eo high

p+ - n+:

Wp < Wn
W small
Vo, Eo high

Wp = Wn
W smallest
Vo, Eo highest

E.-H. Toh ENG325 2014

Recap PN Junction in Equilibrium

p

n
As+
(a)
e

B
h+
M

Metallurgical Junction
Neutral p-region
Eo Neutral n-region

1
=

E(x)
Wp

Wn

Eo =

(b)

e N d Wn

log(n), log(p)

Wn

Wp

Space charge region

Vo

ppo

(f)

nno

pn = ni2

PE(x)

pno

npo
M

Na.Wp = Nd.Wn
eNd
1

eNa

Wp = W

Wp
Wn

Vo =

kT Na Nd
ln
e ni2

Hole PE(x)

Nd
,
Nd + N a

(g)

x (d)
Electron PE(x)

Na
Wn = W
Nd + Na

eVo

x=0

net

(c)

ni

2 ( N a + N d ) Vo 2
Wo =

e Na Nd

V(x)

e N a Wp

(e)

Eo
M

-eVo
E.-H. Toh ENG325 2014

Recap PN Junction in Equilibrium and Forward Bias

Equilibrium

Forward Bias

Reverse Bias

E.-H. Toh ENG325 2014

Outline

Ideal PN Junction
PN Junction under Reverse Bias

Capacitances in PN Junction
Junction Capacitance
Diffusion Capacitance

P-type Silicon
-ve

N-type Silicon
+ve

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10

PN Junction in Reverse Bias

REVERSE BIAS:

P-type

N-type

When n-type is more positive with respect

to p-type. Depletion width increases.

The barrier potential increases to (Vo +
Vr). The electrons and holes thus face a
much larger energy barrier of magnitude
e(Vo + Vr). It is now harder for electrons
and holes to diffuse across the junction.
The diffusion current which is proportional
to exp[-(Vo + Vr)/kT] is now negligible.

There is however a small reverse current
arising from the drift component of the
minority carriers which give rise to Jo.
This is known as minority carrier
extraction.
Equilibrium

Reverse Bias
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Depletion Width of RB PN Junction

Large reverse bias implies large barrier, and energy bands bend
more.

The electric field is larger and depletion region is wider.

For any bias V, the barrier is e(Vo-V) and the width of the depletion
region is
1
2 ( N a + N d ) (Vo V ) 2
W =

e Na Nd

For reverse bias, Vo V = Vo + Vr, which gives

WRB

2 (N a + N d ) (Vo + Vr )
=

e
N
N
a
d

1
2

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RB PN Junction: Extraction of Minority Carrier

Minority Carrier
Concentration
Neutral p-region

E o +E

Under reverse bias, diffusion of

carriers is inhibited.

Neutral n-region
Thermall
y
generated
EHP
Holes

Electrons

npo

However drift of carriers remains

unchanged such that
pno
x

Wo
W

Jp(diff) < Jp(drift); Jn(diff) < Jn(drift)

Diffusion
Drift

Minority carrier concentrations in the

neutral p and n regions outside W will
drop below the equilibrium values
(npo and pno) due to the net drift of
carriers.

This is known as minority carrier
extraction.
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RB PN Junction: Thermal Generation

Ideal pn junction

For ideal pn junction, drift current will be

small and limited by the small number of
minority carriers.

As such, the reverse saturation current is
independent of the reverse bias, provided
junction breakdown will not occur.

With Thermal Generation

However, when the depletion width of the

RB junction becomes large, electron-hole
(e-h) pairs generated by thermal generation
could occur in the vicinity of the junction.

These e-h pairs are then separated by the
built-in electric field and would now
contribute to the overall drift current.
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RB PN Junction: Thermal Generation

Minority Carrier
Concentration
Neutral p-region

Eo+E

Only those minority carriers that are thermally

generated within one minority carrier diffusion
length away from the edge of W contributes to
the drift current.

Neutral n-region
Thermall
y
generated
EHP
Holes

Electrons

npo

pno
x

Wo
W

Diffusion
Drift

With Thermal Generation

Carriers generated outside these two regions will

not contribute when they are more than one
diffusion length away from W, as they recombine
before reaching the depletion region.

These minority carriers will drift across the
junction as soon as it reaches W.

They will, together with the thermally generated
majority carriers, be driven by the weak electric
field in the neutral p and n regions and move
towards both ends of the diode.
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RB PN Junction: IV Characteristics
Minority Carrier
Concentration
Neutral p-region

Eo+E

The reverse saturation current would increase

with larger depletion width. It also increases
exponentially with temperature.

Neutral n-region
Thermall
y
generated
EHP
Holes

Electrons

npo

pno
x

Wo
W

Diffusion
Drift

Reverse saturation current can also be

increased by optical excitation.

I
mA

For example shining light near the metallurgical

junction of a reverse biased pn junction will
generate extra electron-hole pairs and increase
the minority carriers supply, i.e. Io.

Ideal diode

(a)

nA
Space charge layer
generation, surface leakage
current, etc.

This is the basis of using a reverse biased pn

junction as a photodetector.
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Reverse Bias Diode at Various Temperatures

Reverse diode current (A) at V = 5 V
10-4

323 K Ge Photodiode
Slope = 0.63 eV

10-6
10-8

Trap level

10-10

Slope = 0.33 eV

238 K

10-12

Slope above 238K, Irev is controlled by ni2

and is given by 0.63eV, which is the bandgap
of Ge

10-14
10-16
0.002

(b)

0.004
0.006 0.008
1/Temperature (1/K)

Slope below 238K, Irev is controlled by ni and

is given by 0.33eV, which is ~ Eg/2. This is
due to EHP generation in SCL via defects
and impurities through recombination centers.

Reverse diode current in a Ge pn junction as a function of temperature in a ln(Irev) vs 1/T plot. Above 238
K, Irev is controlled by ni2 and below 238 K it is controlled by ni. The vertical axis is a logarithmic scale
with actual current values. (From D. Scansen and S.O. Kasap, Cnd. J. Physics. 70, 1070-1075, 1992.)
E.-H. Toh ENG325 2014

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PN Junction in Various Bias Modes

Equilibrium

Forward Bias

Reverse Bias

Equilibrium (Zero Bias):

At equilibrium, Jdrift = Jdiffusion. Net current = 0.

Forward Bias (Injection of minority carrier):

Smaller depletion width. Jdrift < Jdiffusion. Net current > 0. Mainly diffusion current.

Reverse Bias (Extraction of minority carrier):

Larger depletion width. Jdrift > Jdiffusion. Net current > 0. Mainly drift current.

At large , avalanche breakdown.
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PN Junction in FB and RB: Summary

Under FB, Jn(diff) and Jp(diff) increase sharply due to lower potential barrier,
e(Vo Vf). Jn(drift) and Jp(drift) remain unchanged at their thermal equilibrium
values. Minority carrier injection takes place. Net effect is a large diffusion
current flowing from the p to n-side, which increases sharply with the applied
voltage.

Under RB, Jn(diff) and Jp(diff) decrease sharply due to higher potential barrier,
e(Vo + Vr) and are negligible. Jn(drift) and Jp(drift) remain unchanged at their
thermal equilibrium values. Minority carrier extraction takes place. Net effect is a
constant drift current flowing from n to p side, which is insensitive to the applied
V. This is the generation current (also called the reverse saturation current) of a
pn junction.

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PN Junction in FB and RB: Summary

Forward Bias
(V = Vf)
Built-in potential
Electric Field
Depletion width W
Conduction
Mechanism

Vo - Vf
decreases (external field
opposes built-in field)

Reverse Bias
(V = -Vr)
Vo + Vr
increases (external field aids
built-in field)

decreases

increases

Diffusion
(Injection of minority
carriers)

Drift
(Extraction of minority
carriers)

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Ex: EB/E.Field/Carrier Density for a FB pn diode

pn junction in equilibrium

pn junction with FB of 0.6V

p = 1017cm-3; n = 1016cm-3

p = 1017cm-3; n = 1016cm-3

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Ex: EB/E.Field/Carrier Density for a FB pn diode

pn junction in equilibrium

pn junction with FB of 0.6V

p = 1017cm-3; n = 1016cm-3

p = 1017cm-3; n = 1016cm-3

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Ex: EB/E.Field/Carrier Density for a RB pn diode

pn junction in equilibrium

p = 1017cm-3; n = 1016cm-3

pn junction with RB of 2V

p = 1017cm-3; n = 1016cm-3

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Ex: EB/E.Field/Carrier Density for a RB pn diode

pn junction in equilibrium

p = 1017cm-3; n = 1016cm-3

pn junction with RB of 2V

p = 1017cm-3; n = 1016cm-3

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Problem 1

A Si p-n junction has donor and acceptor doping concentrations Nd and Na of
1016 cm3 and 1018 cm3, respectively. Assume kT = 0.026 eV at 300 K, ni =
1.5x1010 cm3 and r = 11.8. Calculate the following parameters at (i) 0 bias,
(ii) forward bias of 0.65 V and (ii) reverse bias of 2 V.
(a)
Contact potentials under 0 bias, FB and RB.
(b)
The depletion region width
(c)
The penetration depth into the n-side and p-side
(d)
Peak electric field at the junction and
(e)
The space charge in each side of the depletion region, given a crosssectional area of 104 cm2
(f)
Sketch charge density and electric field in the pn junction.
N-type Silicon

P-type Silicon

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Problem 1: Approach
N-type Silicon

P-type Silicon

Wn

( x ) = e N a

for W p < x < 0

( x ) = e Nd

for 0 < x < W n

Wp

W
Parameters
Contact
Potential
Total
Depletion
Width, W
Depletion
Width,
Wp, Wn
Peak Electric
Field, Eo
Charge, Q

Equilibrium
Vo =

Forward Bias

kT Na Nd
ln
e ni2

2 ( N a + N d ) Vo
Wo =

e
N
N
a
d

1
2

Reverse Bias

Vo V f

Vo + Vr

2 ( N a + N d ) (Vo V f )
WFB =

e
N
N
a
d

Wp = W

Nd
,
Nd + Na

Eo =

Wn = W

e N d Wn

1
2

WRB

2 ( N a + N d ) (Vo + Vr ) 2
=

e Na Nd

Na
Nd + Na

e Na W p

Q = eN a W p A = Q+ = eN d Wn A

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Problem 1: Solution
(a)
Contact potential is the potential difference in the depletion region. This is
nothing but the built-in potential Vo.
kT N a N d
Vo = ln
e ni2

18
16
10

10
= 0.817 V
Vo = 0.026(V) ln
1.5 1010 2

The contact potential with zero bias is 0.817 V.

With a FB of 0.65 V, the contact potential changes to

Vo V = 0.817 0.65 = 0.167 V.
With a RB of 2 V, the contact potential changes to
Vo + V = 0.817 + 2 = 2.817 V.
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Problem 1: Solution
(b)
We can now calculate the zero bias depletion region using
1

2 ( N a + N d ) Vo 2
W =
=
e Na Nd

)(

2 8.85 1014 11.8 1018 +1016 0.817

cm

19
18
16

1.6 10 10 10

W = 3.28 105 cm or 0.328m

When a Forward Bias is applied the contact potential becomes Vo V. Thus

the depletion region width will now be

WFB

)(

1
2 8.85 1014 11.8 1018 +1016 ( 0.817 0.65 )
2 ( N a + N d )(Vo V ) 2

cm
=
=

19
18
16

e Na Nd
1.6 10 10 10

WFB =1.48 105 cm or 0.148m

E.-H. Toh ENG325 2014

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Problem 1: Solution
When a Reverse Bias is applied the contact potential becomes Vo + V. Thus
the depletion region width will now be

)(

1
2 8.85 1014 11.8 1018 +1016 ( 0.817 + 0.65
2 )
2 ( N a + N d )(Vo +V ) 2

cm
WRB =
=

19
18
16

e Na Nd
1.6 10 10 10

WRB = 6.1105 cm or 0.61m

Note that the depletion region width decreases in FB and increases with RB.
(c) Now we can calculate the extensions of the depletion region into both n
and the p-sides.
With zero bias

W Nd
3.28 105 1016
3
Wp =
m
=

3.25

10
18
16
Na + Nd
10 +10
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Problem 1: Solution
W Na
3.28 105 1018
4
Wn =
=

3.25

10
cm or 0.325m
18
16
Na + Nd
10 +10
With a FB of 0.65 V
W Nd
1.48 105 1016
3
=

1.47

10
Wp =
m
18
16
Na + Nd
10 + 10

W Na
1.48 105 1018
4
Wn =
=

1.47

10
cm or 0.147 m
18
16
Na + Nd
10 + 10

With a RB of 2 V
W Nd
6.10 105 1016
3
Wp =
m
=

6.04

10
18
16
Na + Nd
10 +10

W Na
6.10 105 1018
4
Wn =
=

6.10

10
cm or 0.610m
18
16
Na + Nd
10 + 10
Obviously, the extensions of the depletion regions also decrease with FB
and increase with RB.
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Problem 1: Solution
We can now calculate the peak value of the electric field. With zero bias, we
have
eN a W p
eN W
Eo = d n =

Eo =

eN d Wn

1.6 1019 1016 3.25 105

8.85 1014 11.8

= 5 104 V/cm

With a FB of 0.65 V, we have

Eo

FB =

eN d Wn

1.6 1019 1016 1.47 105

8.85 1014 11.8

= 2.25 104 V/cm

Finally, with a RB of 2 V, we have

Eo

RB

eN d Wn

1.6 1019 1016 6.10 105

8.85 1014 11.8

= 9.25 104 V/cm

The peak value of E-field decreases with FB and increases with RB, consistent
with the contact potential variation.
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Problem 1: Solution
(e) The +ve and ve charges in the depletion region are equal to each other to
maintain charge neutrality.

Q = eN a W p A = Q+ = eN d Wn A
Use either Q or Q+ to get the depletion region charge. Thus
Q+ = eN d Wn A =1.6 1019 1016 3.25 105 104 Coul
Q+ = 5.2 1012 Coul = Q

With a FB of 0.65 V, we have

Q+ =eN d Wn A =1.6 1019 1016 1.47 105 104 Coul

Q+ = 2.35 1012 Coul = Q
With a RB of 2 V, we have

Q+ = eN d Wn A =1.6 1019 1016 6.10 105 104 Coul

Q+ = 9.66 1012 Coul = Q
Note once again that the charge in the depletion region decreases with FB and
increases with RB.
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Problem 1: Solution
(f) Sketch the charge density and electric field
n-Si
Nd = 1016 cm3

(x)

Na = 1018 cm3

p-Si

1016 q
x (um)

Zero Bias
FB 0.65 V
RB 2V

-1018 q
(x)
x (um)

Parameters

Zero Bias

FB
(0.65 V)

RB
(2V)

Contact
Potential (V)

Vo =
0.817

Vo V =
0.167

Vo + V =
2.817

Wn (um)

0.325

0.147

0.61

Wp (um)

3.25 x10-3

1.47 x10-3

6.04 x10-4

Eo (V/cm)

5 x 104

2.25 x 104

9.25 x 104

How about voltage and potential energy?

Sketch the energy band diagram with diff bias?
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Problem 1: Solution
(f) Sketch the charge density and electric field
n-Si
Nd = 1016 cm3

(x)

Na = 1018 cm3

p-Si

1016 q
x (um)

Zero Bias
FB 0.65 V
RB 2V

-1018 q
(x)
x (um)

Parameters

Zero Bias

FB
(0.65 V)

RB
(2V)

Contact
Potential (V)

Vo =
0.817

Vo V =
0.167

Vo + V =
2.817

Wn (um)

0.325

0.147

0.61

Wp (um)

3.25 x10-3

1.47 x10-3

6.04 x10-4

Eo (V/cm)

5 x 104

2.25 x 104

9.25 x 104

How about voltage and potential energy?

Sketch the energy band diagram with diff bias?
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Ex: Energy Band Diagram for Different Bias

P-type Silicon

N-type Silicon

Na = 1018 cm3
Nd = 1016 cm3

Vo = 0.82V

Applets:
http://www.acsu.buffalo.edu/~wie/
applet/biasedPN/BiasedPN.htm2

At Equilibrium:

At FB of 0.2V:

At RB of 0.5V:

At FB of 0.5V:

At RB of 1.5V:

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Ex: Energy Band Diagram for Different Bias

P-type Silicon

N-type Silicon

Na = 1018 cm3
Nd = 1016 cm3

Vo = 0.82V

Applets:
http://www.acsu.buffalo.edu/~wie/
applet/biasedPN/BiasedPN.htm2

At Equilibrium:

At FB of 0.2V: 0.2V

0V

0V
At RB of 0.5V:

WVo & E -

0.5V
W+
Vo & E +

0V
At FB of 0.5V: 0.5V

0V
W -Vo & E --

At RB of 1.5V:
W ++
Vo & E ++
E.-H. Toh ENG325 2014

1.5V
36

Outline

Ideal PN Junction
PN Junction under Reverse Bias

Capacitances in PN Junction
Junction Capacitance
Diffusion Capacitance

CT = Cdep + Cdiff

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Capacitor and Capacitance

Capacitance, C = dQ/dV = A/d

Measured in Farads(F).

Resistance offered by Capacitor is called impedance (Z).

In AC circuits, impedance decreases with increase in frequency and
capacitance. So it can act as short circuit or AC coupling. For low
frequency, it can act as open Circuit to filter out the frequency.
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Capacitance reduces Circuit Speed

Capacitances introduced
time delay in switching circuits.
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Capacitances in PN Junction

Two kinds of capacitances are associated with pn junctions.

These are junction capacitance (or transition capacitance) and charge
storage capacitance (or diffusion capacitance).

These are modeled by two capacitors, Cdep and Cdiff respectively,
connected parallel to the pn junction.

Cdep

CT = Cdep + Cdiff

Cdiff

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Junction Depletion Capacitance

In a pn junction, the width of the depletion region is given by
2 ( N a + N d ) (Vo V )
W =

e
N
N

a
d

1
2

The depletion region models a parallel plate capacitor of width W,

with the capacitance given by
Cdep =

A
W

This is the depletion layer capacitance, also called junction

capacitance.

Under dynamic conditions,
Cdep =

dQ
dV
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Junction Depletion Capacitance

Net Space Charge
Density

Diode voltage = -Vr

dQ = Incremental charge

The depletion region

behaves like a capacitor.

eNd

Space charge region

The charge in the depletion

region depends on the
applied voltage just as in a
capacitor.

Diode voltage = -(Vr+dVr)

eNa

Cdep =

A
W

The larger the depletion

width, the smaller the
depletion capacitance.
Cdep =

dQ
dV
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Junction Depletion Capacitance

Cdep

Depletion width decreases with

forward bias and increases with
reverse bias.

(10-103) pF/mm2

Reverse Forward

Diode Voltage
Cdep =

A
W

0
Cdep =

Vo
dQ
dV

The incremental capacitance of

the depletion region increases
with forward bias and decreases
with reverse bias.

Its value is typically in the range

of pF/mm2 of device area.

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Junction Depletion Capacitance

The absolute charge and the depletion width in an abrupt junction are:
| Q |= eN dWn A = eN aW p A

2 (N a + N d ) (Vo V )
W =

e Na Nd

W = Wn + W p

Wn = W

Na
Nd + Na

Wp = W

1
2

Nd
Nd + Na

Substituting Wn or Wp into |Q|:

| Q |= eN dWn A = eN aW p A = eN d

Na
Na + Nd

1
2

2 (N a + N d )(V Vo )

A=
eN a N d

2eN a N d (V Vo )
A

N
N
+
a
d

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1
2

44

Junction Depletion Capacitance

It is then easy to differentiate and see that:

Cdep =|

dQ
A
|=
dV
Vo V

1
2

eN a N d
A
=

W
2( N a + N d )

This expression for Cdep is the same as that for a parallel plate model:
Cdep =

A
W

Note that W is a function of applied voltage V.

This capacitance is present under both forward and reverse bias
conditions.
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Junction Depletion Capacitance

The expression for Cdep is an exact analogy with that of a parallel
plate capacitor, with the depletion width W corresponding to the plate
separation of the capacitor.

Physically as we change the bias V across the pn junction, it takes
time for the majority carriers to respond in order to expose a larger
space charge region under RB, or a smaller space charge region
under FB.

Cdep is associated with this delay time for W to reach its steady state
width.

In other words, W cannot change instantaneously in response to a
sudden change in the bias.
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Problem 2

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Problem 2: Solution

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Problem 2: Solution

Zero Bias

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Problem 2: Solution

Reverse Bias
(+6V)

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Problem 2: Solution

Forward Bias
(-0.7V)

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Diffusion Capacitance
Consider a pn junction in forward bias:

There is a reduction in the barrier height, a
reduction in the depletion region width, and an
injection of minority carriers across the
depletion region into the opposite region, where
they are stored as excess minority carriers.

There is subsequent diffusion of minority
carriers in the two regions.

The density of the excess stored minority
carriers increases with an increase in the FB.

As a result there is stored positive charge (due
to the hole diffusion) in the n-region and stored
negative charge (due to the electron diffusion)
in the p-region.
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Diffusion Capacitance: Stored Minority Carriers

Note that with changing bias V, there will be a
change in the minority carrier concentrations at
sides of the junction, near the depletion edge.

Neutral n-region

SCL

pn'(0) when V+dV

I = Q /h

pn(0) when V
dQ
Q

pno
x'

V to V+dV

Depletion width become larger upon RB or

smaller upon FB.

The increase in the minority carrier
concentration does not take place
instantaneously with a sudden change in FB.

A delay time is involved in the minority carrier
concentration attaining a steady-state.

This delay is due to capacitive effect as a result
of stored minority carrier charges in the neutral
n and p regions.

This is the origin of diffusion capacitance.
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Diffusion Capacitance: Diffusion Current

The diffusion capacitance is
defined by

Cdiff

dQ
=
dV

pn'(0) when V+dV

I = Q /h

pn(0) when V
dQ
Q

Under forward bias, the current is

contributed mainly by diffusion
such that

=
1

Neutral n-region

SCL

pno
x'

V to V+dV

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Diffusion Capacitance: Dominant in FB

The rate of change of charge Q defines the current I.

If h is the minority carrier lifetime (for holes in n-region), we can write,
I = Q/h

This gives

Cdiff

dQ h eI h I (mA)
=
=
=
dV
kT
25

at 300K

Under reverse bias, even though the same equation for I is applicable,
there is negligible injection and hence no stored charges or diffusion
capacitance.

Diffusion capacitance is predominant only in forward bias.

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Diffusion Capacitance: Speed Limitation

It can be seen that Cdiff can be very large under FB due to the large I.

Physically, this can be understood because the storage charge
depends exponentially on the bias voltage V under FB.

This implies that there will be a large change in the amount of storage
charge (dQs) of the minority carriers with changing bias (dV), resulting
in a large Cdiff.

The Cdiff will impose a serious limitation for a FB biased pn junction in
high frequency applications.

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Total Capacitance

The total capacitance across the pn junction is
CT = Cdep + Cdiff

During FB, Cdiff is dominant (Cdiff >> Cdep) due to the large change in
the amount of storage charge of the minority carriers, hence CT Cdiff.

During RB, Cdiff is not critical (Cdiff << Cdep) since there is only very
small change in the amount of storage charge of the minority carriers.

In comparison, the junction capacitance Cdep dominates under RB, i.e.,
CT Cdep.

The presence of these capacitances will limit the speed of operation of
any circuits using pn junction diodes.
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Problem 3
Consider a silicon p+-n junction with Nd = 1016 cm3. The area of the
diode is 104 cm2. Assume kT = 0.026 eV at 300 K, ni = 1.51010 cm3
and r = 11.8. Holes in the n-region have a lifetime of 0.5 s with a
diffusion coefficient of 10 cm2/s. Calculate the diffusion capacitance of
the p-n junction at a forward bias of 0.65 V.

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Problem 3: Solution

The diffusion capacitance is given by

Cdiff =

h e I
kT

Let us determine the diode current at a FB of 0.65V

qV
I = I so exp
kT

where

eDh
eDe 2
I so =
+
ni A
Lh N d Le N a
=

In this case, we have a pn junction where the p is heavily doped.

Thus, we can write

19

1.6 10 10
10
I so =
1.5 10
10 0.5 106 1016

104 = 1.6 1015 A

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Problem 3: Solution

Thus, the diode current is

0.65
4
I = I so exp

1
=
1.15

10
A

0.026

Finally, we now have the diffusion capacitance as

Cdiff

0.5 106 1.15 104

=
=
=
0.026
kT
kT

h e I

h I

= 2.23 109 F or 2.23 nF

Compare this value with the FB depletion layer capacitance. It is
obvious that diffusion capacitance is more dominant that depletion layer
capacitance in FB.
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e-Learning

Webpage:

http://www.acsu.buffalo.edu/~wie/applet/applet.old

Applets:

http://www.acsu.buffalo.edu/~wie/applet/

Fermi-Level:

http://www.acsu.buffalo.edu/~wie/applet/fermi/fermi.html

Carrier-Concentration:

http://www.acsu.buffalo.edu/~wie/applet/fermi/sfw/show.html

PN Junction and Band Diagram:

http://www.acsu.buffalo.edu/~wie/applet/pnformation/pnformation.html

PN Junction under forward bias

http://www.acsu.buffalo.edu/~wie/applet/students/jiawang/pn.html

PN Junction under bias

http://www.acsu.buffalo.edu/~wie/applet/biasedPN/BiasedPN.htm2
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Class Test on Seminar 3

15% of final score

25 MCQ questions (closed book)

Covers materials from seminar 1 & 2

Only a few questions require you to remember
basic equations

Bring your calculator

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