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    Etching Metals

    Uploaded by

    Kamal Hameed Al-taiy
    The document discusses the etching process which is used to remove material from surfaces. There are two main types of etching: wet etching which uses liquid chemical solvents and dry etching (also called plasma etching) which uses gases and physical bombardment. Key aspects of etching discussed include etch rate, selectivity between different materials, the importance of anisotropic profiles, microloading effects, overetching, and different etching methods such as wet, dry, and reactive ion etching. Endpoint detection is also covered.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Etching Metals

    Uploaded by

    Kamal Hameed Al-taiy
    153 views27 pages
    The document discusses the etching process which is used to remove material from surfaces. There are two main types of etching: wet etching which uses liquid chemical solvents and dry etching (also called plasma etching) which uses gases and physical bombardment. Key aspects of etching discussed include etch rate, selectivity between different materials, the importance of anisotropic profiles, microloading effects, overetching, and different etching methods such as wet, dry, and reactive ion etching. Endpoint detection is also covered.

    Original Description:

    etching process of metals

    Original Title

    Etching metals

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    The document discusses the etching process which is used to remove material from surfaces. There are two main types of etching: wet etching which uses liquid chemical solvents and dry etching (also called plasma etching) which uses gases and physical bombardment. Key aspects of etching discussed include etch rate, selectivity between different materials, the importance of anisotropic profiles, microloading effects, overetching, and different etching methods such as wet, dry, and reactive ion etching. Endpoint detection is also covered.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    153 views27 pages

    Etching Metals

    Uploaded by

    Kamal Hameed Al-taiy
    The document discusses the etching process which is used to remove material from surfaces. There are two main types of etching: wet etching which uses liquid chemical solvents and dry etching (also called plasma etching) which uses gases and physical bombardment. Key aspects of etching discussed include etch rate, selectivity between different materials, the importance of anisotropic profiles, microloading effects, overetching, and different etching methods such as wet, dry, and reactive ion etching. Endpoint detection is also covered.

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    At a glance
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    The key takeaways are that etching is a process that removes material from a surface using chemical, physical, or a combination of methods. There are different types of etching such as wet etching and dry etching.

    The two main types of etching are wet etching, which uses chemical solutions, and dry etching (also called plasma etching), which uses gases.

    The main factors that affect the etching rate are reactant concentration, reaction time, reaction temperature, etch selectivity, directionality, uniformity, and damage from the etch process.

    Etching

    Reading Assignments:
    Plummer, Chap 10.1~10.4

    Etching
    Light
    Mask

    Etch Rate

    Photoresist

    Deposited Film
    Substrate
    Film deposition

    Selectivity
    Photoresist application

    Exposure

    Directional
    (CD and profile)

    Etch mask

    Development

    Important process
    consideration:

    Etching

    Resist removal

    Uniformity

    Process that removes material from surface


    Damage (Dry etch)
    Chemical, physical or combination of the two
    Selective or blanket etch
    Selective etch transfers IC design image on the photoresist to the surface layer on
    wafer
    Other applications: Mask making, Printed electronic board, Artwork, etc.
    2

    Etching Methods
    The process can remove the material from the surface
    is called ETCHING.
    A + B(s) AB N

    ETCHING : Wet etching and Dry etching.

     Liquid
     Chemical solvent
     Chemical reaction.

     Dry (or called Plasma Etching)


     Gas
     Physical bombardment. or
    Chemical reaction.(or combination)
    Jyyang in NDL

    Etch Rate

    Selectivity
    Selectivity is the ratio of etch rates of different
    materials.
    Very important in patterned etch
    Selectivity to underneath layer and to photoresist

    ER
    S=
    ER

    Practical Etching Profiles


    a)

    lateral etch
    b)

    over etch
    More directional etching

    Anisotropic Af = 1 rlat/rver
    a) isotropic

    b) anisotropic

    c) completely
    anisotropic

    Microloading Effect
    depth/width ; etch rate
    Aspect Ratio Dependent Etch Rate

    ARDE effect

    wafer
    faster etch rate

    slower etch rate

    Microscopic loading effect

    wafer
    Jyyang in NDL

    Microloading Effect
    Smaller hole has a lower etch rate than the
    larger holes
    Etchants are more difficult to pass through the
    smaller hole
    Etch byproducts are harder to diffuse out
    Lower pressure can minimize the effect.
    Longer MFP, easier for etchants reaching the
    film and for etch byproducts to get out

    Over Etch
    Film thickness and etch
    rate is not uniform
    Over etch: removes the
    leftover film
    Selectivity of etched
    film and substrate
    Endpoit Detector
    Optical Emission
    Spectroscopy, OES
    Mass Spectroscopy, MS
    Laser-Induce
    Fluorescence, LIF
    9

    Wet Etching
    Mechanism
    Step 1:
    Diffusion (reactant)
    Step 2:
    Reaction
    Step 3:
    Desorption (product)

    Main factors

    Isotropic

    Reactant
    product

    boundary layer
    PR
    Film

    reaction

    wafer

    reactant concentration
    reaction time
    reaction temperature
    Jyyang in NDL

    10

    Wet Etch
    Chemical solution to dissolve the materials on the wafer
    surface
    The byproducts are gases, liquids or materials that are
    soluble in the etchant solution.
    Three basic steps : etch, rinse, and dry
    Spin Dryer

    Etchant Sink

    D.I. Wafer Rinse

    11

    12

    Wet Etch Profiles


    7 - 8 m
    Photoresist
    3m
    Film
    Substrate

    Isotropic

    3 m

    Etch
    Bias

    PR
    Film
    Substrate

    Cant be used for feature size smaller than 3 m


    Replaced by plasma etch for fine line patterning

    13

    Si Anisotropic Etching
    Si may be etched by direct
    dissolution of Si atoms.
    The (111)-plane has higher Si bonds density
    than the (100)-plane. The etch rate in (111)plane is expected to be lower.
    Anisotropic etching or oriented dependent
    etching becomes possible.

    Wb = W0 2l cot 54.7 D = W0 2l

    Etch (100)-oriented Si through a


    window creates V-groove (54.7o).
    19 wt% KOH AT 80C, (100) : (110) : (111) =
    100 : 16 : 1
    10 wt% KOH at 80C, (100)-Si etch rate ~
    1.1um/min, selectivity to SiO2>600.
    14

    Plasma Etch or Dry Etch Reactive Ion Etch (RIE)


    Combination of chemical and physical etch
    Plasma process, ion bombardment (physical) plus free
    radicals (chemical)
    Misleading name, should be called ion-assisted etch or
    ion-induced etch
    High and controllable etch rate
    Anisotropic and controllable etch profile
    Good and controllable selectivity
    All patterned etches are RIE processes in 8 fabs
    15

    Schematic of RIE System

    Provide DC bias!

    16

    Potential Distribution RF Biased


    RF Source

    Volt

    Plasma Potential

    DC Bias

    RF potential
    Time

    V1 A2
    =
    V2 A1

    17

    Ion-assisted Etch

    Free radical only

    Ion Bombardment only

    (isotropic)

    (anisotropic)

    18

    Ion-assisted Etch

    (anisotropic)

    (anisotropic)
    19

    Ion-induced Etching
    Etch rate of reactive radicals with etched material ~ 0
    Heavy ion bombardment damages chemical bonds
    Exposed surface atoms are easier to react with reactive radicals,
    i.e., etch reaction is induced by ion bombardment
    Ion bombardment is mainly in vertical direction
    Etch conducted only on vertical direction anisotropic etch
    Ex. Poly-Si gate etching

    20

    4F + SiO2(s) SiF4(g)N + O2(g)N

    Etch chemistry:
    Byproduct volatility
    Selectivity
    Anisotropy
    21

    Mask

    Mask

    Film

    Film

    Inhibitor vs. Etch Profile

    Inhibitor
    deposition
    or formation

    Inhibitor: etch byproducts that impede


    further etch process. Important for the
    control of etching profile.

    Etch

    Inhibitor
    deposition
    or formation

    Etch

    .
    ..

    .
    ..
    Final
    profile

    a. Inhibitor deposition rate


    fast compared to etch rate

    b. Inhibitor deposition rate relatively


    slow compared to etch rate

    22

    Inhibitor vs. Etch Profile


    Poly-silicon etch

    C2H6 increase the sidewall


    inhibitor (polymer ) deposition.

    SiO2 etch

    Higher C/F ratio increase the sidewall


    inhibitor (polymer) deposition. O2
    reduces the polymer deposition.
    23

    High-Density Plasma Etching


    magnetic coil

    In conventional RIE (10-100 mtorr),


    For more directed etching, need stronger ion
    bombardment. Possible more damage to
    substrate.
    Lower pressures can be used to attain more
    directional etching and less microloading
    effect, but reduces the plasma density and thus
    the etching rate.

    Microwave
    supply
    (2.45 GHz)

    plasma

    gas inlet
    wafer
    gas outlet,
    pump
    RF
    bias supply
    (13.56 MHz)

    Anisotropy

    Selectivity

    Energy

    Pressure

    Sputter Etching
    and Ion Beam
    Milling

    Physical
    Processes

    High Density
    Plasma Etching
    Reactive Ion
    Etching
    Plasma Etching
    Wet Chemical
    Etching

    Chemical
    Processes

    In HDP etching (1-10 mtorr) ,


    Uses separate RF source as wafer bias. This
    separates the plasma power (density), from
    the wafer bias (ion accelerating field).
    High density plasma can be obtained at low
    pressure which improves both the directional
    etching and reduces the substrate damage
    while keeping the compatible etching rate.
    24

    Endpoint Detect
    Each atom has its own emission wavelength
    Color of plasma changes when etch
    different materials
    Optical sensors can be used to detect the
    change and indicate the endpoint for plasma etch processes
    excited species`

    hv
    excited species``

    25

    Residue
    Unwanted leftovers
    Causes
    insufficient over etch
    non-volatile etch byproducts
    Sufficient ion bombardment to dislodge
    Right amount of chemical etch to scoop

    Oxygen plasma ashing: Organic residues


    Wet chemical clean: inorganic residues

    26

    Post Etch Clean


    Remove PR

    O2 plasma ashing (typical method)


    UV + O3
    H2SO4: H2O2=3:1 or 5:1 (before metal deposition)
    Solvents rinse (after metal deposition)

    Remove polymer

    H2O rinse
    Solvents rinse

    Remove particles
    SC1 + megasonic clean
    Scrubber clean

    25

    0.4

    20

    0.3

    15

    0.2

    10

    0.1

    20

    40

    60

    80

    Uniformity (%)

    Remove radicals

    Ashing Rate (um/min)

    H2SO4: H2O2=3:1 or 5:1 (before metal deposition)


    Solvents rinse (after metal deposition)
    H2SO4+H2O2+HF(ppm)+H2O
    0.5

    100

    O2/He Ratio (%)

    27

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