ECE594I Notes Set 7: Shot Noise: Mark Rodwell University of California, Santa Barbara y
ECE594I Notes Set 7: Shot Noise: Mark Rodwell University of California, Santa Barbara y
ECE594I Notes Set 7: Shot Noise: Mark Rodwell University of California, Santa Barbara y
Rodwell, copyrighted
Sources / Citations :
Kittel and Kroemer : Thermal Physics
Van der Ziel : Noise in Solid - State Devices
Papoulis : Probabil ity and Random Variables (hard, comprehens ive)
Peyton Z. Peebles : Probabili ty, Random Variables, Random Signal Principle s (introduct ory)
Wozencraft & Jacobs : Principle s of Communicat ions Engineeri ng.
Motchenbak er : Low Noise Electroni c Design
Informatio n theory lecture notes : Thomas Cover, Stanford, circa 1982
Probabilit y lecture notes : Martin Hellman,
Hellman Stanford,
Stanford circa 1982
National Semiconduc tor Linear Applicatio ns Notes : Noise in circuits.
Suggested
S
t d references
f
f study.
for
t d
Van der Ziel, Wozencraft & Jacobs, Peebles, Kittel and Kroemer
Papers by Fukui (device noise), Smith & Personik (optical receiver design)
National Semi. App. Notes (! )
Cover and Williams : Elements of Informatio n Theory
Shot Noise
View as follows :
r ( t ) = electron flux across boundary (# electrons/ second)
...clearly a series of impulses at random times.
f ( t ) = # electrons
l t
crossing
i bondary
b d
b t
between
t = t and
d t = 0.
Then f (t ) = r ( t ) * h ( t ),
) where h ( t ) is an impulse response :
h (t ) = 1 for t < t < 0 , h (t ) = 0 otherwise.
Work with fluctuatio ns r = r r , f = f f
f is Gaussian with variance 2f = rt
sin (t / 2 )
Power spectral density of f : S ff ( j ) = r ( t ) 2
(
)
t
/
2
sin (t / 2 )
But S ff ( j ) = H ( j ) S rr ( j )
2
=r
I = I DC = qr
I2 = q 2 r2
S I ( j ) = q 2 S r ( j ) = q 2 r = q ( q r ) = q I
Using instead single - sided Hz - based spectra :
~
S I ( jf ) = 2 qI
~
Assume : resistors have shot noise : S I sn I sn = 2 q (1 mA )
Following the illustrate d manipulati ons,
~
~
I SN ,tot = ( I sn1 + I sn 2 ) / 2 where S I sn 1I sn 1 = S I sn 2 I sn 2 = 2 q (1 mA )
~
~
~
So S I sn ,tot I sn ,tot = S I sn 1I sn 1 + S I sn 2 I sn 2 4 = q (1 mA )
~
~
S I sn I sn S I sn ,tot I sn ,tot
Breaking a resistor into a vast # of small resistors, a similar argument
shows * how * shot noise is suppressed in resistors.
2
exp(
/
)
1
hf / kT
~
+
S II ( jf ) = 2 qI 0
2kT exp( hf / kT ) 1
...or that th e diode zero - bias conductanc e increases for hf > kT
We had assumed equilibriu m thermodyn amics in order to obtain the probabilit y of state
occupancy. We have further assumed independen t electron emissions. Yet, we have not
calculated from equilibriu m thermodyn amics the rate at which such states would be filled
and emptied, hence we have no basis for claiming independen t events and a white spectral
density.
We would expect, from Et ~ h, that states be repopulate d at time delays t ~ h / E .
A forward - biased diode produces less noise than a resistor of equal conductanc e.
e
Left 2 images : real case of transimpe dance optical amplifier.
Next 2 images : simplified case of photodiode with simple load.
Final image : equivalent circuit
Rbias = 100 k so that I bias = 100 A giving rj = 26 mV/100 A = 260
~
S I n ,r I n ,r = 4kT /(100 k )
~
S I n , shot I n , shot = 2 q (100 A) = 2kT / 260
~
Total : S I n ,tot I n ,tot 2kT / 260
This is half that produced by instead loading the photodiode in 260 .
d
[I 0 (exp( qV f / kT ) 1)]
dV
Under
U
d strong
t
reverse bias
bi , g becomes
b
very small,
ll andd the
th
available noise power far exceeds kT .