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    TTQ 3-4 LD

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    Dang Khue
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    TTQ 3-4 LD

    Uploaded by

    Dang Khue
    63 views23 pages
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     Each node within the domain name hierarchy is assigned to an authority Note:  The authority for a particular node can in turn delegate authority for lower levels of that node within the domain name hierarchy

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    63 views23 pages

    TTQ 3-4 LD

    Uploaded by

    Dang Khue
     Each node within the domain name hierarchy is assigned to an authority Note:  The authority for a particular node can in turn delegate authority for lower levels of that node within the domain name hierarchy

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
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    of 23

    Optical communications

    Chapter 3.3
    Pham Quang Thai
    Pqthai.hcmut@gmail.com

    Content

    Semiconductor physics
    Light emitting diode (LED)
    Laser principles
    Laser diode

    The first semiconductor laser: Fabry Perot


    homojunction laser (FB laser)

    (a) at thermal equilibrium


    (b) under forward bias
    (spontaneous emission)
    (c) under high-injection condition
    (population inversion - lasing)
    3

    P-I characteristic

    P-I characteristic
    Rate equation
    Electron rate = injected electron - spontaneous recombination stimulated emission
    Photon rate = Stimulated emission + spontaneous emission photon loss

    dN
    I
    N
    =

    CN
    dt ed sp
    d

    = CN + Rsp
    dt
    ph

    N: number of electrons
    I: bias current
    e: electron charge
    d: active region volume
    sp: spontaneous recombination lifetime
    C: absorption coefficient
    : number of photons
    Rsp: spontaneous emission rate
    ph: photon lifitime
    5

    P-I characteristic
    At lasing threshold:
    dN
    =0
    dt
    d
    =0
    dt
    =0
    I th =

    edN th

    sp

    1
    1 1
    =
    = +
    ln

    2 L R1 R2

    gth

    : gain coefficient of cavity


    : loss coefficient of cavity
    L: cavity length
    R1, R2: mirror reflection coefficient

    P-I characteristic
    Above lasing threshold
    =

    ph

    ( I I th )

    ed
    1c 1
    1 hc
    P=
    ln

    2 n 2 L R1 R2

    ext

    ( g th )
    2 P / hc
    =
    = int
    I / ed
    gth

    P-I characteristic
    Temperature dependent of Ith

    P-I characteristic
    Temperature dependent
    I th =

    edN th

    sp

    I th

    1
    sp ( N )

    sp ( N ) N 2

    As temperature increases, Auger recombination


    increases exponentially -> N decreases
    Ith increases with temperature
    9

    Modulation characteristic

    10

    Modulation characteristic
    Modulation bandwidth for small signal
    f3dB =

    3
    2

    f relaxation =

    C
    ( I I th )
    ed
    1
    2

    sp ph I th
    1

    11

    Modulation characteristic
    Modulation of large signal:
    Large change in bias current
    -> change in N
    -> change in n
    -> change in phase
    -> change in both amplitude
    and phase of output signal
    -> Chirping !

    12

    Signal disprtion at the optical source


    Distortion

    13

    Relative intensity noise (RIN)


    Cause by amplified spontaneous emission

    14

    Examples for chapter 3.3


    Problem 4-12:
    A GaAs laser emitting at 800 nm has a 400-m
    cavity length with a refractive index n=3.6. If the
    gain g exceeds the total loss , throughout the
    range 750nm<<850nm, how many modes will
    exist in the laser?

    15

    Examples for chapter 3.3

    16

    Issues of homojunction
    Threshold current density: 105 A/cm2
    External quantum efficiency: << 1%
    Methods for improvement:
    1. Carrier confinement. Confine the injected
    electrons and holes to a narrow region about
    the junction -> reduce current to achieve
    population inversion.
    2. Photon confinement. Construct a dielectric
    waveguide around the optical gain region ->
    increase quantum efficiency
    17

    Carrier confinement: single and double


    heterojunction

    18

    Carrier confinement: single and double


    heterojunction

    19

    Photon confinement: waveguide


    structure

    20

    Single frequency laser: distributed


    feedback laser (DFB laser)
    Only one frequency satisfies Bragg condition

    21

    Single frequency laser: Vertical Cavity Surface


    Emitting Laser (VCSEL)
    Only one frequency satisfies Bragg condition and cavity length

    22

    Light sources comparison

    LED

    LD

    Incoherence light

    Coherent light

    <10mW output power

    ~100 mW output power

    ~10THz spectral width

    5-10MHz spectral width

    100-200 MHz modulation BW

    ~25 GHz modulation BW

    30-50 beam divergence

    3-5 beam divergence

    ~1% couple efficiency

    >50% couple efficiency

    <100 mA bias current

    ~300-400mA bias current

    23

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