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    However, The Wires and Plates That Connect The Components Will Have Frequency Dependent Parts - Even Printed Circuit Tracks

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    Nabil Isham
    This document discusses how the properties of passive components like resistors, capacitors, and inductors change at high frequencies due to skin effect and parasitic inductance and capacitance. It provides equations to model the frequency-dependent resistance of conductors and shows that resistance increases with frequency above 500MHz due to current crowding at the surface. Similar models are given for the impedance of real capacitors and inductors, including the effects of parasitic inductance and dielectric loss. Graphs demonstrate the resonant behavior that results from these parasitic elements.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    However, The Wires and Plates That Connect The Components Will Have Frequency Dependent Parts - Even Printed Circuit Tracks

    Uploaded by

    Nabil Isham
    29 views10 pages
    This document discusses how the properties of passive components like resistors, capacitors, and inductors change at high frequencies due to skin effect and parasitic inductance and capacitance. It provides equations to model the frequency-dependent resistance of conductors and shows that resistance increases with frequency above 500MHz due to current crowding at the surface. Similar models are given for the impedance of real capacitors and inductors, including the effects of parasitic inductance and dielectric loss. Graphs demonstrate the resonant behavior that results from these parasitic elements.

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    This document discusses how the properties of passive components like resistors, capacitors, and inductors change at high frequencies due to skin effect and parasitic inductance and capacitance. It provides equations to model the frequency-dependent resistance of conductors and shows that resistance increases with frequency above 500MHz due to current crowding at the surface. Similar models are given for the impedance of real capacitors and inductors, including the effects of parasitic inductance and dielectric loss. Graphs demonstrate the resonant behavior that results from these parasitic elements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    29 views10 pages

    However, The Wires and Plates That Connect The Components Will Have Frequency Dependent Parts - Even Printed Circuit Tracks

    Uploaded by

    Nabil Isham
    This document discusses how the properties of passive components like resistors, capacitors, and inductors change at high frequencies due to skin effect and parasitic inductance and capacitance. It provides equations to model the frequency-dependent resistance of conductors and shows that resistance increases with frequency above 500MHz due to current crowding at the surface. Similar models are given for the impedance of real capacitors and inductors, including the effects of parasitic inductance and dielectric loss. Graphs demonstrate the resonant behavior that results from these parasitic elements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 10

    1.

    RFbehaviourofPassivecomponents
    TheoreticallyaccircuitanalysistellsusthatheresistanceR,capacitanceCandinductanceLis
    independentoffrequency.Asareminderthevoltageofacapacitorcanbedescribed

    Orasaphasor
    1

    Andforaninductor
    3
    Sofor1pFcapacitorand1nHinductorat50Hz
    |

    =3.18*109
    2

    50 1

    3.14 10

    Bothnegligible

    However,Thewiresandplatesthatconnectthecomponentswillhave
    frequencydependentpartsevenprintedcircuittracks.
    Nowletsseewhathappenwhenthefrequencyincreases

    AtDCthecurrentflowsuniformlydistributedovertheentireconductorcrosssectionalarea.When
    thecurrentbecomestimevariantthealternatingchargecarrierflowhasamagneticfieldthat
    inducesanelectricfield(Faradaysinductionlaw)whosecurrentdensityopposestheinitialcurrent
    flow.Theeffectisstrongestasthecentre,r=0,sotheresistanceisincreased.Theresultisthatas
    currentflowmigratestothesurface,andtheradiusofthiseffectintheconductorincreaseswith
    frequencytherebyreducingthecurrentflowandincreasethecircuitresistance.Itcanbeshown
    thatthecurrentdensityalongthewireaxis,zis

    exp

    Where
    andIisthetotalcurrentflow.Thekeycomponentistheexponent,
    knownastheskindepth.
    1

    Whichdescribesthespatialdropoffincurrentdensityasafunctionoffrequencyf,permittivity
    theconductivityatDC.Theexponentialdecreaseofcurrentdensitywithdepthapplies
    and
    tomostgeometries.Thusshowingtheskindepthdecreaseswithfrequency.Theskinlayer
    thicknessisusefulforresistancecomputations,howeverthenormalisedresistance,R,canbe
    simplifiertothus

    Forfrequenciesabove500Mhz.Noteaistheconductorradius,assumingitisround.Theinternal
    (totheconductor)inductanceimpedanceisthus

    Theinternalinductanceisduetothemagneticfieldinternaltothewire.Theseequationsarebased
    ontheassumptionthat<<aandtherelativepermeabilityoftheconductor
    1.Figure
    illustratestheskindepthwithfrequencyfordifferentconductors.

    Figure1Skindepthbehaviourofcopper,cu=64.5X106S/m,AluminiumAl=40X106S/m,gold
    Au=48.5X106S/m,andsoldersolder=6.38X106S/m

    Theskindepthhasaphysicalmeaninginthatitdenotesthereductionincurrentdensitytoe1or
    37%foitsvalueatthesurface.Figure2givestheproportionofcurrentdensityrelativetoa
    cylindricalconductorradius.

    Figure2Normalisedcurrentdensityvsradiusatdifferentfrequencies

    Althoughtheinternalinductancecanbesignificantitistheexternalinductance,Lexresultingfrom
    thefieldemanatingfromtheconductorsurfacethatdominates.Theexternalinductanceofa
    cylindricalwireofradiusaandlengthlcanbeapproximatedby

    ln

    Wherelisthelength.Soletsmakeacomparisonbetweeninternalandexternalinductance
    Wire(AWG26)hasaradiusof0.2mm.Theinternalinductancefromequation8is

    2
    And

    2.39

    10

    Andusingequation9tocalculatetheexternalinductanceatablecanbeconstructedshowingthe
    rationofinternaltoexternalinduceatdifferentfrequencies
    F(GHz)
    0.1
    2
    5

    (m)
    6.266
    1.4
    0.886

    Lex(nH)
    17.1
    17.1
    17.1

    Lin(nH)
    0.0617
    0.0138
    0.00872

    Lin/Lex
    3.60X103
    8.05X104
    5.09X104

    Resistorsathighfrequency.
    Physicalresistorscomeinvariousforms
    1)
    2)
    3)
    4)

    Carboncomposition
    Wirewound
    Metalfilm
    Thinfilm

    Photoinsert.
    OfthesethethinfilmchiporsurfacemounteddevicesareusedforRFandMWcircuitsbecauseof
    theresmallsizeandgoodRFperformance.Resistorsarenecessarilyconnectedbywires,which
    haveinductanceandinternalcapacitancecausedbychargeseparationintheresistormaterial.A
    linearnetworkcircuitcanbedrawnthus:

    Figure3TopLlaretheleadinductances,CarepresentsthematerialcapacitanceandRisdcresistance.Bottomisthe
    equivalentcircuitforawirewoundresistance.Notetheextraininductanceresultsfromtheselfinductanceofthe
    resistancewirewoundtocreatetheresistance

    Takingtheequivalentcircuitfortheametalfilmresistorofnominalvalueof2kusingthecircuit
    modelinfigure3wherethereare2.5cmofwireconnectionsof0.203mmradiusandthestray
    capacitanceandtakingtheconductivityofcoppertobe64.5X106/Sm.Usingequation9

    0 := 4 10

    0 l

    ln 2 l 1
    Lex :=

    2 a

    Lex = 5.2 10

    a := 0.203 10

    l := 0.05

    Lengthistwicetheleadedconnections.Notethisformulaassumesthattheskindepthis<<thanthe
    wireradius.
    Usingthetopequivalentcircuitinfigure3theimpedancewithfrequencycannowbeplotted

    1
    1/

    Whichresultsinaresponse

    Causedby
    Ca

    Caused
    byLex

    Figure4Frequencyresponseofthemagnitudeoftheresistorequivalentcircuit.TheDeepnadirat300Mhziscausedby
    theseriesresonancebetweenLexandCa.Below2MhztheresistanceisthevalueofR

    Soonlyatlowfrequencies,belowabout2Mhztheresistanceisthedesignvaluebutabovethatthe
    straycapacitancefirstreducesitsvaluetothatatresonanceandthenincreaseduetothestray
    inductance.

    Capacitorsathighfrequency.
    Chipcapacitorsarewidelyusedinfrequencydependentcircuits,filters,oscillatorsanddecoupling.
    ADCthecapacitanceis

    WhereAtheareaofthecapacitanceelectrodesanddtheseparation.Ifthedielectricisanything
    otherthanairthenthepermittivityoffreespaceismultipliedbyaunitlessfactortherelative
    permittivityusually>1.Asthefrequencyincreasesthedielectriccanbecomelossysoits
    impedanceisexpressedastheparallelcombinationofconductance,GeandsusceptanceC
    1

    TheconductanceGe=dielectricA/dwheredielectricistheconductivityofthedielectric.The
    ratioofthisconductivityandisconventionallycalledthelosstangent.
    tan

    tan

    Thelosstangentisfrequencydependentitself.Sonowwecanconstructtheequivalentcircuit

    Figure5Equivalentcircuitofcapacitanceathighfrequency,Liistheleadinductance,RstheleadresistanceandRethe
    dielectriclossthatisfrequencydependent

    WhereLiistheleadinductanceandRsistheleadresistanceReistheresistancerepresentingthe
    dielectriclossRe=1/Ge.Sotheoverallimpedancecanbesetdown
    1
    1

    Foraspecificexample:whatistheresponseofa47pFcapacitorwithdielectricmediumof
    aluminiumoxide,Al2O3,whichhasalosstangentto104.Theconnectleadsare1.25cm,0.203mm(
    26AWG)andtheconductivityofcopperis64.5X106/Sm.Usingequation9

    Plottheresponseofthemodelinfigure5weseetheequivalentcapacitance,liketheresistancehas
    resonantfrequency.

    Zc( t) := j L + Rs +

    1
    j C +

    Re

    Ideal
    capacitor

    Figure6Thefrequencydependenceofarealcapacitor.Noticeresonantnadircausedbytheleadinductanceresonanting
    withcapacitance.

    Itisassumedinthisdemonstrationthattanfrequencyindependent.Thelosstangentcanalsobe
    definedasanequivalentseriesresistance,ESR

    Type equation here.

    0 := 4 10

    0 l

    ln 2 l 1
    Lex :=

    2 a

    Lex = 2.253 10

    a := 0.203 10

    l := 0.025

    Wherelaccountsforbothleads.Theseriesresistancemustdeterminedbytakingskindepthinto
    account.
    l
    f 0 cu
    Rs :=
    2 a cu

    Rs = 0.048

    0 f

    Rs :=

    2 a cu

    Rs = 0.048

    ThelossresistanceinthecapacitorisRe=1/Ge
    4

    Tan := 1 10

    12

    Cc := 47 10

    Re :=
    2 Cc f Tan

    Re = 3.386 10

    At100Mhz.

    Realcapacitorsareconstructedtominimisecontactimpedanceandmaximumcapacitance/volume


    Figure7Constructionofaceramicchipcapacitor

    Inductorsathighfrequency
    InductorsareusedinRFcircuitsforblockRFinbiasingandgivingfrequencyselection.Physically
    thoughadjacentwindingofthecoilsarelinkedbycapacitanceandthecoilconductorwillhave
    resistancewhichitselfisfrequencydependentduetotheskineffect.

    Figure8Physicalcoilwithseriesresistanceandwindingcapacitance

    Theimplicationofthismodelisthatatsomefrequencyitwillresonate,callsenseresonance.As
    beforeanequivalentcircuitcanbedefinedbasedontheseobservations

    Figure9Equivalentcircuitofarealinductor

    AnditsAdmittiane=1/Zdescribedthus
    1

    Againasinthecapacitorasanexampleacoilisconstructedwith3.5turnsof127umdiameterwire
    witharadiusof1.27mm.Theinductanceofshortcoilisgivenapproximatelyby
    2

    L :=

    10 r 0 N

    9 r + 10 l

    Givingavalueof32.3nH.IftheskineffectisneglectedthenRsissettotheDCvalueofLwire/

    Lwire := 2 r N

    Rdc :=

    Lwire
    cu a

    Givingavalueof0.034ohms.Itsresponsewouldbeforacoilselfcapacitanceof40pF

    Ideal
    inductor

    Figure10Frequencydependenceofarealinductor

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