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    Transistor

    Uploaded by

    Zaidi Shah
    The document describes low power bipolar transistors and provides their specifications and characteristics. It includes details about the transistor packages, absolute maximum ratings, electrical characteristics, and international sales offices.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Transistor

    Uploaded by

    Zaidi Shah
    96 views5 pages
    The document describes low power bipolar transistors and provides their specifications and characteristics. It includes details about the transistor packages, absolute maximum ratings, electrical characteristics, and international sales offices.

    Original Description:

    Data sheet transistor

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    © © All Rights Reserved

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    The document describes low power bipolar transistors and provides their specifications and characteristics. It includes details about the transistor packages, absolute maximum ratings, electrical characteristics, and international sales offices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    96 views5 pages

    Transistor

    Uploaded by

    Zaidi Shah
    The document describes low power bipolar transistors and provides their specifications and characteristics. It includes details about the transistor packages, absolute maximum ratings, electrical characteristics, and international sales offices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    BC107/ BC108/ BC109

    Low Power Bipolar Transistors


    TO-18

    Features:
    NPN Silicon Planar Epitaxial Transistors.
    Suitable for applications requiring low noise and good hFE linearity, eg. audio
    pre-amplifiers, and instrumentation.

    TO-18 Metal Can Package


    Dimension

    Minimum

    Maximum

    5.24

    5.84

    4.52

    4.97

    4.31

    5.33

    0.40

    0.53

    0.76

    0.91

    1.17

    0.71

    1.21

    12.70

    1.27
    2.97

    45
    Dimensions : Millimetres

    Pin Configuration
    1. Emitter.
    2. Base.
    3. Collector.

    Page 1

    30/05/05 V1.0

    BC107/ BC108/ BC109


    Low Power Bipolar Transistors
    Absolute Maximum Ratings
    DESCRIPTION

    SYMBOL

    BC107 BC108 BC109 UNIT

    Collector-Emitter Voltage

    VCEO

    45

    25

    25

    Collector-Base Voltage

    VCBO

    50

    30

    30

    Emitter-Base Voltage

    VEBO

    6.0

    5.0

    5.0

    Collector Current Continuous


    Power Dissipation at Ta = 25C

    IC

    0.2

    PD

    0.6

    Derate Above 25C

    2.28

    Power Dissipation at Tc = 25C

    PD

    Derate Above 25C


    Operating And Storage Junction

    Tj, Tstg

    mW/C

    1.0

    6.67

    mW/C

    -65 to +200

    Temperature Range
    Thermal Resistance
    Junction to Case

    Rth (j-c)

    175

    C/W

    Electrical Characteristics (Ta = 25C Unless Otherwise Specified)


    Description

    Symbol

    Test Condition

    Collector-Emitter Voltage

    VCEO

    IC = 2mA, IB = 0

    BC107
    BC108/109

    45
    20

    V
    V

    Emitter-Base Voltage

    VEBO

    IE = 10uA, IC = 0

    BC107
    BC108/109

    6.0
    5.0

    V
    V

    Collector-Cut off Current

    ICBO

    VCB = 45V, IE =
    VCB = 25V, IE =
    Tamb = 125C
    VCB = 45V, IE =
    VCB = 25V, IE =

    0
    0

    BC107
    BC108/109

    15
    15

    nA
    nA

    0
    0

    BC107
    BC108/109

    4.0
    4.0

    uA
    uA

    Page 2

    Minimum

    Maximum

    Unit

    30/05/05 V1.0

    BC107/ BC108/ BC109


    Low Power Bipolar Transistors
    Description

    Symbol

    Test Condition

    DC Current

    hFE

    IC = 10uA, VCE = 5V

    B Group
    C Group

    40
    100

    IC = 2mA, VCE = 5V

    BC107
    BC108
    BC109
    A Group
    B Group
    C Group

    110
    110
    200
    110
    200
    420

    Base Emitter Saturation Voltage

    Minimum

    Maximum

    Unit

    450
    800
    800
    220
    450
    800

    VBE (Sat)

    IC = 10mA, IB = 0.5mA
    IC = 100mA, IB = 5mA

    0.83
    1.05

    V
    V

    Collector Emitter Saturation Voltage VCE (Sat)

    IC = 10mA, IB = 0.5mA
    IC = 100mA, IB = 5mA

    0.25
    0.60

    V
    V

    Base Emitter on Voltage

    VBE (on)

    IC = 2mA, VCE = 5V
    IC = 10mA, VCE = 5V

    0.70
    0.77

    V
    V

    Collector Knee Voltage

    VCE (K)

    IC = 10mA, IB = The Value for


    which IC = 11mA, at VCE = 1V

    0.60

    Transition Frequency

    ft

    VCE = 5V, IC =10mA, f = 100MHz

    Noise Figure

    NF

    VCE = 5V, IC = 0.2mA


    Rg = 2kohms,
    F = 30Hz to 15 KHz
    F = 1kHz, B = 200Hz

    Output Capacitance

    Cobo

    VCB = 10V, f = 1MHz

    Small Signal Current Gain

    hFE

    ALL f = 1kHz
    IC = 2mA,VCE = 5V

    Input Impedance

    hie

    ALL f = 1kHz
    IC = 2mA,VCE = 5V

    Output Admittance

    hoe

    ALL f = 1kHz
    IC = 2mA,VCE = 5V

    Page 3

    0.55

    150

    BC109
    BC109
    BC107/108

    MHz

    4.0
    4.0
    10

    dB
    dB
    dB

    4.5

    pF

    BC107
    BC108
    BC109

    125
    125
    240

    500
    900
    900

    A Group
    B Group
    C Group

    125
    240
    450

    260
    500
    900

    A Group
    B Group
    C Group

    1.6
    3.2
    6.0

    4.5
    8.5
    15

    K
    K
    K

    30
    60
    110

    umhos
    umhos
    umhos

    A Group
    B Group
    C Group

    30/05/05 V1.0

    BC107/ BC108/ BC109


    Low Power Bipolar Transistors
    Specifications
    VCEO
    VCBO
    IC
    maximum maximum maximum
    (V)
    (V)
    (A)

    hFE minimum
    at IC = 2 (mA)

    Transition
    Noise Figure
    Frequency
    maximum
    minimum
    (dB)
    (MHz)

    Ptot at
    Package and
    Ta = 25C
    pin out
    (mW)

    Part Number
    (NPN)
    BC107

    45

    50

    BC107A
    125
    0.2

    25

    BC107B

    10

    BC108
    150

    600

    TO-18

    BC108B
    BC108C

    30

    BC109
    240

    BC109B
    BC109C

    Page 4

    30/05/05 V1.0

    BC107/ BC108/ BC109


    Low Power Bipolar Transistors
    Notes:

    International Sales Offices:


    AUSTRALIA Farnell InOne

    FINLAND Farnell InOne

    NETHERLANDS Farnell InOne

    SWITZERLAND Farnell InOne

    Tel No:

    Tel No:

    Tel No:

    ++ 61 2 9645 8888

    Fax No: ++ 61 2 9644 7898

    Fax No: ++ 358 9 345 5411

    Fax No: ++ 31 30 241 7333

    Tel No: ++ 41 1 204 64 64


    Fax No: ++ 41 1 204 64 54

    AUSTRIA Farnell InOne

    FRANCE Farnell InOne

    NEW ZEALAND Farnell InOne

    UK Farnell InOne

    Tel No:

    Tel No:

    Tel No:

    Tel No:

    ++ 43 662 2180 680

    ++ 358 9 560 7780

    ++ 33 474 68 99 99

    ++ 31 30 241 7373

    ++ 64 9 357 0646

    ++ 44 8701 200 200

    Fax No: ++ 43 662 2180 670

    Fax No: ++ 33 474 68 99 90

    Fax No: ++ 64 9 357 0656

    Fax No: ++ 44 8701 200 201

    BELGIUM Farnell InOne

    GERMANY Farnell InOne

    NORWAY Farnell InOne

    UK BuckHickman InOne

    Tel No:

    Tel No:

    Tel No:

    ++ 45 44 53 66 66

    ++ 44 8450 510 150

    ++ 32 3 475 2810

    ++ 49 89 61 39 39 39

    Fax No: ++ 32 3 227 3648

    Fax No: ++ 49 89 613 59 01

    Fax No: ++ 45 44 53 66 02

    ++ 44 8450 510 130

    BRAZIL Farnell-Newark InOne

    HONG KONG
    Farnell-Newark InOne
    Tel No: ++ 852 2268 9888

    PORTUGAL Farnell InOne

    UK CPC

    ++ 55 11 4066 9400

    Tel No:

    ++ 34 93 475 8804

    ++ 44 8701 202 530

    Fax No: ++ 55 11 4066 9410

    Fax No: ++ 852 2268 9899

    Fax No: ++ 34 93 474 5288

    ++ 44 8701 202 531

    CHINA Farnell-Newark InOne

    IRELAND Farnell InOne

    SINGAPORE

    Tel No:

    Tel No:

    Tel No:

    ++86 10 6238 5152

    Fax No: ++86 10 6238 5022

    Farnell-Newark InOne
    Tel No: ++ 65 6788 0200

    ++ 353 1 830 9277

    Fax No: ++ 353 1 830 9016

    Fax No: ++ 65 6788 0300

    export

    EXPORT Farnell InOne


    Tel No:

    ++ 44 8701 200 208

    Fax No: ++ 44 8701 200 209

    For enquiries from all other markets


    DENMARK Farnell InOne

    ITALY Farnell InOne

    SPAIN Farnell InOne

    Tel No:

    Tel No:

    Tel No:

    ++ 45 44 53 66 44

    ++ 39 02 93 995 200

    ++ 34 93 475 8805

    Fax No: ++ 45 44 53 66 06

    Fax No: ++ 39 02 93 995 300

    Fax No: ++ 34 93 474 5107

    ESTONIA Farnell InOne

    MALAYSIA

    SWEDEN Farnell InOne

    http://www.farnellinone.com
    Tel No:

    ++ 358 9 560 7780

    Fax No: ++ 358 9 345 5411

    Farnell-Newark InOne
    Tel No: ++ 60 3 7873 8000
    Fax No: ++ 60 3 7873 7000

    Tel No:

    ++ 46 8 730 50 00

    Fax No: ++ 46 8 83 52 62

    http://www.buckhickmaninone.com
    http://www.cpc.co.uk

    Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes
    in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied.
    The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data
    sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage
    resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded.
    This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc 2004.

    Page 5

    30/05/05 V1.0

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