This document provides a model question paper for a third semester examination in Electronic Devices and Circuits (EDC). It contains 10 short answer questions in Section 1 worth 1 mark each. Sections 2 through 7 contain longer form questions worth between 5-10 marks each, requiring explanations, derivations, and calculations on topics related to PN diodes, transistors, JFETs, MOSFETs, and transistor amplifier configurations and characteristics. The paper tests students on key concepts of semiconductor devices and transistor amplifiers.
This document provides a model question paper for a third semester examination in Electronic Devices and Circuits (EDC). It contains 10 short answer questions in Section 1 worth 1 mark each. Sections 2 through 7 contain longer form questions worth between 5-10 marks each, requiring explanations, derivations, and calculations on topics related to PN diodes, transistors, JFETs, MOSFETs, and transistor amplifier configurations and characteristics. The paper tests students on key concepts of semiconductor devices and transistor amplifiers.
This document provides a model question paper for a third semester examination in Electronic Devices and Circuits (EDC). It contains 10 short answer questions in Section 1 worth 1 mark each. Sections 2 through 7 contain longer form questions worth between 5-10 marks each, requiring explanations, derivations, and calculations on topics related to PN diodes, transistors, JFETs, MOSFETs, and transistor amplifier configurations and characteristics. The paper tests students on key concepts of semiconductor devices and transistor amplifiers.
This document provides a model question paper for a third semester examination in Electronic Devices and Circuits (EDC). It contains 10 short answer questions in Section 1 worth 1 mark each. Sections 2 through 7 contain longer form questions worth between 5-10 marks each, requiring explanations, derivations, and calculations on topics related to PN diodes, transistors, JFETs, MOSFETs, and transistor amplifier configurations and characteristics. The paper tests students on key concepts of semiconductor devices and transistor amplifiers.
III- SEMESTER EXAMINATION ELECTRONIC DEVICES AND CIRCUITS (EDC) (Scheme 2013) (Common to ECE and EEE) Duration: 3 hrs.
Max. Marks: 70 Note: Question 1 is compulsory. Answer any four from the remaining.
1.
[10x1M] a) A silicon PN diode has reverse saturation current of 10A at room temperature 25 C. Calculate reverse saturation current at 450C. b) Write volt-ampere relation of PN diode. c) A transistor has = 0.98, ICBO = 5 A, IB = 100 A. Find and IC. d) Define thermal run away in Transistor. e) Draw the symbol of P-Channel JFET. f) What is the relation between rd, gm and of FET? g) Draw the symbol N-Channel MOSFET? h) Name the Transistor Configuration which has low input Impedance & high output Impedance i) Mention different types of Coupling used in Transistor Amplifiers j) Relation between Gain & Bandwidth 0
2. a) Derive the expressions for Volt-ampere relation of PN diode and explain the V-I characteristics. [10M] b) Draw the Ebers-Moll Model of transistor and explain it? [5M] 3. a) What are the sources of instability of IC in Transistor? Derive the expressions for stability factors S, S and S for self- bias circuit. [9M] b) For a Transistor self-bias circuit given VCC = 16V, RC = 3 K, RE = 2 K, R1 =56 K and R2 = 20 K. Transistor of Ge type with = 0.985. Determine i) Q Point ii) stability factor S [6M] 4. a) Explain the operation of n-channel JFET with circuit symbol and Drain characteristics.[10M] b) Calculate ID and gm for VGS = -0.8V if IDSS = 12.4 mA and VP = -6V [5M] 5. a) JFET amplifier with self bias has the following specifications. [10M] VP = -6V, IDSS = 8 mA, RD = 820, RS = 780, R1 = 100M, R2 = 51M. VDD = 15V. Find the operating point. b) Explain the operation of Depletion MOSFET with neat sketch and characteristics [5M] 6. a) Draw the hybrid model of transistor amplifier and derive the expressions for current gain, input Impedance, voltage gain and output impedance circuit using h parameters. [10M] b) Draw the circuit of Darlington amplifier and derive the expression for its input resistance? [5M] 7. a) Derive the low-frequency response and high-frequency response of RC-coupled amplifier with expressions and graph. [10M] b) Derive the expressions for over all band pass of cascaded stages. [5M]
