Bu 508 D

BU208D/508D/508DFI
HIGH VOLTAGE FASTSWITCHING NPN

POWER TRANSISTOR
SGS-THOMSON PREFERRED SALESTYPES

HIGH VOLTAGE CAPABILITY
U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)
JEDEC TO-3 METAL CASE
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
TO-3
1
2
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BU208D, BU508D and BU508DFI are
manufactured
using
Multiepitaxial
Mesa
technology for cost-effective high performance
and uses a Hollow Emitter structure to enhance
switching speeds.
TO-218
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

Symb ol
Valu e
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
1500
V CEO
Collector-Emitter Voltage (I B = 0)
700
V EBO
Emitter-Base Voltage (I C = 0)
10
Collector Current
Collector Peak Current (tp < 5 ms)
15
IC
I CM
Parameter
P tot
T otal Dissipation at T c = 25 o C
T s tg
Storage Temperature
Tj
June 1996
Max. O perating Junction Temperature
TO - 3
TO - 218
150
125
-65 to 150 -65 to 150

150
150
A
ISOW ATT218
50
-65 to 150
150
C
1/8
BU208D/508D/508DFI
THERMAL DATA
R thj -ca se
Thermal Resistance Junction-case
TO-3
T O-218
ISOW AT T218
2.5
Max
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbo l
I CES
Parameter
T est Con ditio ns
Min .
Collector Cut-off
Current (V BE = 0)
V CE = 1500 V
V CE = 1500 V
Emitter Cut- off Current

(I C = 0)
V EB = 5 V
V CE(sat)
Collector-Emitter
Saturation Voltage
I C = 4.5 A
VCEO(s us)
Collector-Emitter
Sustaining Voltage
I C = 100 m A
V BE(sat )
Base-Emitter
Saturation Voltage
I C = 4.5 A
ts
tf
INDUCT IVE LOAD

Storage Time
Fall Time
I C = 4.5 A hF E = 2.5 V CC = 140 V

LC = 0.9 mH LB = 3 H
VF
Diode F orward Voltage
IF = 4 A
fT
Transition Frequency
I C = 0.1 A
I EBO
T yp.
T j = 125 C
IB = 2 A
Max.
Unit
1
2
mA
mA
300
mA
700
IB = 2 A
1.3
s
ns
7
550
2
V CE = 5 V
f = 5 MHz
V
MHz
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Safe Operating Area (TO-3)
2/8
Safe Operating Area (TO-218/ISOWATT218)
BU208D/508D/508DFI
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Switching Time Inductive Load
Switching Time Inductive Load (see figure 1)
Switching Time Percentance vs. Case
3/8
BU208D/508D/508DFI
Figure 1: Inductive Load Switching Test Circuits
4/8
BU208D/508D/508DFI
TO-3 (H) MECHANICAL DATA

mm
DIM.
MIN.
A
inch
TYP.
MAX.
MIN.
TYP.
11.7
MAX.
0.460
0.96
1.10
0.037
0.043
1.70
0.066
8.7
0.342
20.0
0.787
10.9
0.429
16.9
0.665
26.2
3.88
1.031
4.09
0.152
39.50
1.555
30.10
1.185
0.161
P003N
5/8
BU208D/508D/508DFI
TO-218 (SOT-93) MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.7
4.9
0.185
0.193
1.17
1.37
0.046
0.054
2.5
0.098
0.5
0.78
0.019
0.030
1.1
1.3
0.043
0.051
10.8
11.1
0.425
0.437
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
0.163
31
1.220
12.2
0.480
4.1
0.157
0.161
L6
L5
L3
L2
6/8
P025A
BU208D/508D/508DFI
ISOWATT218 MECHANICAL DATA

mm
DIM.
MIN.
inch
MAX.
MIN.
5.35
TYP.
5.65
0.210
TYP.
MAX.
0.222
3.3
3.8
0.130
0.149
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
0.45
0.017
0.039
1.05
1.25
0.041
0.049
10.8
11.2
0.425
0.441
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
3.5
3.7
0.137
0.145
2.1
2.3
0.082
4.6
0.090
0.181
L3
D1
L2
L6
F
L5
L1
L4
P025C
7/8
BU208D/508D/508DFI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
..
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BU208D/508D/508DFI

HIGH VOLTAGE FASTSWITCHING NPN

SGS-THOMSON PREFERRED SALESTYPES

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Collector Peak Current (tp < 5 ms)

Max. O perating Junction Temperature

-65 to 150 -65 to 150

Thermal Resistance Junction-case

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

T est Con ditio ns

Emitter Cut- off Current

INDUCT IVE LOAD

I C = 4.5 A hF E = 2.5 V CC = 140 V

Diode F orward Voltage

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area (TO-3)

Safe Operating Area (TO-218/ISOWATT218)

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Switching Time Inductive Load

Switching Time Inductive Load (see figure 1)

Switching Time Percentance vs. Case

TO-3 (H) MECHANICAL DATA

TO-218 (SOT-93) MECHANICAL DATA

ISOWATT218 MECHANICAL DATA

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