The document discusses various types of active RF components used in RF circuits including Schottky diodes, PIN diodes, varactor diodes, and IMPATT diodes. It describes the basic structure and operating principles of each component, highlighting key differences such as reverse recovery time between Schottky and PN junction diodes, and the use of a variable depletion region in varactor diodes to produce a voltage-dependent capacitance. Applications mentioned include using varactor diodes for frequency tuning in microwave circuits and generating short voltage pulses.
The document discusses various types of active RF components used in RF circuits including Schottky diodes, PIN diodes, varactor diodes, and IMPATT diodes. It describes the basic structure and operating principles of each component, highlighting key differences such as reverse recovery time between Schottky and PN junction diodes, and the use of a variable depletion region in varactor diodes to produce a voltage-dependent capacitance. Applications mentioned include using varactor diodes for frequency tuning in microwave circuits and generating short voltage pulses.
The document discusses various types of active RF components used in RF circuits including Schottky diodes, PIN diodes, varactor diodes, and IMPATT diodes. It describes the basic structure and operating principles of each component, highlighting key differences such as reverse recovery time between Schottky and PN junction diodes, and the use of a variable depletion region in varactor diodes to produce a voltage-dependent capacitance. Applications mentioned include using varactor diodes for frequency tuning in microwave circuits and generating short voltage pulses.
The document discusses various types of active RF components used in RF circuits including Schottky diodes, PIN diodes, varactor diodes, and IMPATT diodes. It describes the basic structure and operating principles of each component, highlighting key differences such as reverse recovery time between Schottky and PN junction diodes, and the use of a variable depletion region in varactor diodes to produce a voltage-dependent capacitance. Applications mentioned include using varactor diodes for frequency tuning in microwave circuits and generating short voltage pulses.
majority carriers are drawn away from the junction
This
action widens the depletion region and
results into Transition Capacitance (CT)
Forward Biased p-n Diode
Forward Biased p-n Diode
For a p-n diode, when forward biased, large
number of electrons diffuse from n to p side
Now, suddenly the diode is reversed biased
(Diode Switching Action)
Similarly, large number of holes diffuse from p
to n side
Due to presence of large number of minority
carriers, initially large Reverse Current (IR) flows
This diffusion process establishes large number
of minority carriers on both the sides
Gradually this reverse current decreases to
Reverse Saturation Current (Io)
Due to this process Forward Current (IF) flows
This effect can be linked to the discharging
current of a capacitor and the effect is represented by Diffusion Capacitance (CD)
p-n Junction Diode for Switching
p-n Junction Diode Waveforms
For quick switching from ON to OFF state, the
Reverse Recovery Time (trr) should be as small as possible
trr
depends on RC Time Constant, where C is the
Diffusion Capacitance
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P N Diode - Assignment 1. Draw an electrical equivalent circuit of a p-n junction diode when forward biased and reverse bias.
Schottky Barrier / Hot Carrier Diode
Schottky Barrier Diode
Schottky Barrier Diode
Schottky diode was named after a German Physicist
Walter H. Schottky The Schottky junction is a metal-semiconductor heterojunction Its working principle is similar to that of a P-N junction, but without the charge accumulation problem Typical metals used are: Molybdenum, Platinum, Chromium, Gold or Tungsten The semiconductor would typically be N-type silicon. Metal side acts as the Anode, and N-type Semiconductor acts as the Cathode of the diode
S B Diode Forward Bias
In FB condition, the electrons on n-side gain energy,
cross the junction and enter the metal
Since, the electrons plunge into the metal with very
large energy, they are called Hot Carriers.
S B Diode Reverse Bias
In RB condition, the current is primarily due to those
electrons in the metal passing into the n-type material.
Reverse saturation current has a bigger magnitude
than in P-N junctions.
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Reverse Recovery Time
The most important difference between the p-n and
Schottky diode is reverse recovery time.
In a p-n diode the reverse recovery time can be in
the order of hundreds of nanoseconds and less than 100 ns.
Schottky diodes do not have a recovery time, as
there is nothing to recover.
The switching time is ~100 ps for the small signal
diodes, and up to tens of nanoseconds for special high-capacity power diodes.
S B Diode V I Curve
S B Diode - Limitations
Relatively low reverse voltage ratings for siliconmetal Schottky diodes, typically 50 V and below.
Relatively high reverse leakage current (under large
reverse bias, the injection of electrons from metal in to silicon increases exponentially)
S B Diode - Assignment 1. Why do Schottky diodes not present a diffusion capacitance when forward biased?
PIN Diode
PIN Diode
A PIN diode is obtained by connecting a highly
doped P+ layer of semiconductor, a long intrinsic (I) layer and a highly doped N+ layer.
The thickness of I-layer varies from 1 to 100 m.
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Significance of I Layer
The presence of a long intrinsic section increases the
breakdown voltage of the device thus allowing high reverse voltages.
The intrinsic section is also responsible for an almost
constant value of reverse bias capacitance, which is also comparatively smaller than that for P-N junctions.
The capacitance is small due to large width of the
intrinsic layer.
The capacitance is independent of the bias voltage.
Small value of capacitance gives high reverse
impedance
PIN Diode Forward Bias
In forward bias, electrons and holes are injected
from the P+ and N+ regions into the I region.
These charges do not recombine immediately.
Finite quantity of charge always remains stored and
results in lowering the resistivity of I region.
The quantity of stored charges (Q) depends on the
recombination time and the forward bias current (IF)
Q = IF . T
PIN Diode Forward Bias
The resistance of the I region under forward bias can be
expressed as:
PIN Diode as a Switch
In forward bias, low impedance is achieved by
controlling the forward current. Forward current can be controlled by applied voltage.
In reverse bias, due to small capacitance value, the
impedance is very high.
RI = WI2 /[(n + p) .T . IF ]
Where,
WI = Width of I Layer n = Electron Mobility p = Electron Mobility
RI = 0.1 ohm for IF= 1 Amp.
RI = 10 Kohm for IF= 1 Amp.
Thus, in forward bias, PIN diode acts as a variable resistor.
PIN Diode - Assignment
1. Why does the intrinsic part of resistance in a PIN diode quickly decrease with forward bias? 2. Why does the reverse capacitance of a PIN diode remain approximately constant with variations in reverse bias voltage?
Varactor Diode
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Varactor Diode - Introduction
Varactor diode is also known as a parametric diode,
tuning diode or varicap diode.
It provides voltage-dependent variable capacitance.
In a circuit it acts like a variable capacitor.
Symbol:
Varactor Diode in Reverse Bias
When a P N Junction diode
is reverse-biased, the depletion region acts like a dielectric material, essential for making a capacitor
The width of the depletion
layer depends on the applied bias
The capacitance is inversely proportional to the width of the depletion layer
Varactor Diode Electrical Circuit
Varactor Diode Applications
Frequency tuning of microwave circuits with a
resonant frequency,
CJ = Junction Capacitance
Varactor diode to generate short pulses.
Varactor Diode Applications
Varactor Diode to Generate Short Pulses
Applied voltage VA across the series connection of a resistor
and a varactor diode, creates a current flow IV. This current will be in phase with the applied voltage over the positive cycle. During the Ve cycle, the stored carriers contributes to continue current flow, until all the carriers are removed When all the carriers are removed, current abruptly drops to zero A transformer can couple a voltage pulse according to Faradays Law : The pulse width can be controlled by: W = Width of the middle layer and Vdmax = drift velocity of the carriers
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IMPATT Diode Introduction
IMPATT stands for IMPact Avalanche Transit Time The original structure was proposed by W T Read Also, known as Read Diode -ve resistance diode Based on two effects:
IMPATT Diode
1. 2.
IMPATT Diode Introduction
The thin p region also known as high-field region or the avalanche region , where the avalanche multiplication occurs The intrinsic / drift region is the region through which the holes drift to reach the P+ , when diode is RB
Avalanche Multiplication Transit Time Effect
Structure can be n+ - p - i - p+ or p+ - n - i - n+
Avalanche Multiplication
If a free electron with sufficient energy strikes a
silicon atom, it will break the covalent bond of silicon and liberate an electron from the covalent bond.
The liberated electron gains energy by being in an
electric field and liberates other electrons from other covalent bonds.
This process will result into a chain reaction and
produce large number of electrons and a large current flow.
This phenomenon is called avalanche.
IMPATT Diode Structure
IMPATT Diode Operation
The IMPATT diode is generally operated in reverse
bias.
The total field across the diode is the sum of ac and
dc fields.
When the total field exceeds a critical threshold limit,
it causes avalanche breakdown at the n+- p junction during the positive half cycle of the ac voltage cycle.
The carrier current (hole current in this case) Io(t)
generated at the n+- p junction by the avalanche multiplication grows exponentially with time.
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IMPATT Diode Operation
During the negative half cycle, when the field is
below breakdown voltage, the carrier current decays exponentially.
Io(t)
is in form a pulse of very short duration and it
reaches its maximum in the middle of the ac voltage cycle.
The generated holes are injected into the space
region towards the negative terminal (towards P+).
IMPATT Diode Operation
The external current Ie(t) because of the traversing of
the holes is delayed by 90o relative to the pulsed Io(t).
Since the carrier current Io(t) is delayed by one
quarter cycle or 90o relative to the ac voltage, Ie(t) is then delayed by 180o relative to the voltage.
Thus, IMPATT diode can be used as a microwave
oscillator with resonant frequency:
As the injected holes traverse the drift space, they
induce a current Ie(t) in the external circuit.
vd = hole drift velocity and L = length of the intrinsic region
IMPATT Diode - Assignment
IMPATT Diode Voltage & Current
1. What are the two mechanisms involved in the
observation of negative-resistance in IMPATT diodes? 2. What is the reason for the T/4 delay between the avalanche current and the applied sinusoidal voltage? 3. Why are IMPATT diodes noisy?
Tunnel Diode Introduction
Tunnel diode was introduced by Dr. Leo Esaki in 1958 -Ve resistance p-n junction diode Tunnel diode is a p-n junction diode with extremely high doping Compared to an ordinary p-n junction diode, the doping density in a tunnel diode is about 1000 times higher
Tunnel Diode
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Effects of Heavy Doping
V I Characteristic of a Tunnel Diode
Extreme heavy doping reduces the depletion layer
width (about 100 Ao) Practically, the charge carriers will tunnel through the potential barrier even they do not have enough kinetic energy to pass through the same barrier Electrons are able to tunnel through the potential barrier at relatively low forward bias voltage (less than 0.05 Volts)
Tunnel Diode with Zero Bias
Tunnel Diode with Bias 0 < V < VP
Tunnel Diode with Bias V = VP
Tunnel Diode with Bias VP < V < VV
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Tunnel Diode with Bias VV < V <
Tunnel Diode Electrical Circuit
RS and LS are the resistance and inductance of the
associated semiconductor layer and the lead CT is the junction capacitance g is the conductance / slope of the I-V curve g= dI/dV
Gunn Diode Introduction
Gunn diode was introduced by J. B. Gunn in 1963
Gunn Effect: Gunn observed periodic fluctuations of current through n-type GaAs specimen, when applied voltage exceeds a certain critical value
Operating Principle of the Gunn Diode:
Transferred Electron Effect
Gunn Diode
Gunns Observations
According to Gunns observation, the carrier drift
velocity is linearly increased from zero to a maximum when the electric field is varied from zero to a threshold value
When the electric field is beyond the threshold value
of 3000 v/cm for the n-type GaAs, the drift velocity starts decreasing
What is the reason for this surprising behavior?
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R-W-H Theory Gunn effect can be understand by R-W-H Theory proposed by three scientists: Ridely, Wattkins and Hilsum In lower valley, the effective electron mass is less as compared to the upper valley. Also, in lower valley, the electron mobility is higher than that of the upper valley.
Gunn Diode J-E Characteristics
Gunn Diode J-E Characteristics
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Gunn Diode J-E Characteristics
When voltage is applied across a slice of n-type GaAs, the excess electrons flow as a current toward the +ve end of the slice. Initially, when voltage across the slice increases, the velocity of electrons increases, which result in to increase in current. Thus, far the device is behaving as a normal +ve resistance device. When the electric field is increases beyond the threshold value, the electrons acquire energy and transferred to the upper valley.
Gunn Diode J-E Characteristics
As soon as the electrons are transferred to upper valley, they become less mobile and suddenly current reduces (although voltage is increasing) Thus, now diode exhibits negative resistance characteristics.
BARITT Diode Introduction
BARITT Diode
BARITT stands for BARrier Injected Transit Time
Looks like a transistor without base contact
Formed by forward biased p-n junction with p-n-p or
p-n-i-p or p-n-metal or metal-n-metal configurations
BARITT Diode Operation
BARITT Diode Comparison
BARITT diode has a long drift region similar to those
of IMPATT diode.
BARITT diode is less noisy as compared to IMPATT
diode (due to absence of avalanche multiplication).
The electric field should not be too high to cause
avalanche multiplication
BARITT diode is a low power diode.
Holes are injected into the n region from the forward
biased junction.
The charge carriers then drift the n-region and form a
current pulse.
The diode exhibits a ve resistance for transit angles
between to 2.
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BARITT Diode - Assignment
1. Compare BARITT diode with IMPATT diode.
Assignment 1. Go through all solved and unsolved numerical problems related to RF diodes from the relevant chapters of Samuel Liao.
