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    Guc 356 64 49019 2024-10-15T09 07 54

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    Guc 356 64 49019 2024-10-15T09 07 54

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    Guc 356 64 49019 2024-10-15T09 07 54

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    of 2

    th

    The German University in Cairo Electronics 5 Semester


    Faculty of Information Engineering & Technology Semiconductors (Elct 503)
    Electronics Department Fall 20

    Problem Set 6
    7

    1) a) Consider an ideal pn junction diode at T = 300K operating in the forward - bias region.
    Calculate the change in diode voltage that will cause a factor of 10 increase in current.
    b) Repeat part a) for a factor of 100 increase in current.

    2) Consider a p + n silicon diode at T = 300K with doping concentrations of N A = 1018 cm −3


    and N D = 1016 cm −3 .The minority carrier hole diffusion coefficient is D p = 12cm 2 / s
    and the minority carrier lifetime is τ pο = 10 -7 s.The cross - sectional area is A = 10 -4 cm 2 .
    Calculate the reverse saturation current and the diode current at a forward - bias voltage
    of 0.5V.

    3) Consider an ideal silicon pn junction diode with the following parameters τ = 0.1× 10 -6 s,
    D n = 25cm 2 / s, D p = 10cm 2 / s.What must be the ratio of N A / N D so that 95 percent of
    the current in the depletion region is carried by electrons?

    4) A silicon step junction has uniform impuity doping concentrations of N A = 5 × 1015 cm −3


    and N D = 1× 1015 cm −3 , and a cross - sectional area of A = 10 -4 cm 2 .Let τ = 0.4 μs .Calculate
    a) the ideal reverse saturation current due to holes
    b) the ideal reverse saturation current due to electrons
    c) the hole concentration at x n if Va = 0.5 Vbi .
    d) the total current under Va

    5) Explain physically why the charge storage capacitance is unimprotant for reverse - biased
    junctions?
    6) The cross - sectional area of pn junction is 10 -3 cm 2 .The temperature of diode is T = 300K,
    and the doping concentrations are N D = 1016 cm −3 and N A = 8 × 1015 cm −3 .Assume minority
    carrier lifetime of τ = 10 -6 s.Calculate the total number of excess electrons in the p region
    for a) Va = 0.3V b)Va = 0.4V

    7) Assume that the doping concentration N A on the p side of an abrupt pn junction is the same as
    N D on the nside.Each side is many diffusion lengths long.Find the expression for the hole current
    I p in the p - type material.

    8) An n + p - junction with a long p - region has the following properties : N A = 1016 cm -3 ,


    D p = 13cm 2 / s, μ n = 1000cm 2 / V .s,τ n = 2 μs, ni = 1010 cm −3 . If we apply 0.7V forward bias
    to the junction at 300K, what is the electric field in the p - region far from the junction?

    9) An abrupt silicon p-n junction (Na = 1016 cm-3 and Nd = 4 x 1016 cm-3) is biased with Va = 0.6 V.
    Assuming that the n-type region is much smaller than the diffusion length with wn' = 1 μm and
    assuming a "long" p-type region. Use μn = 1000 cm2/V-s and μp = 300 cm2/V-s. The minority
    carrier lifetime is 10 μs and the diode area is 100 μm by 100 μm. Calculate the ideal diode current.
    Sketch the mobile carrier distribution throughout the whole junction.

    10) A p-n diode has the following data:


    NA = 1018 cm-3 , Dn = 20 cm2/s , IJn = 0.1 μsec , ND = 1016 cm-3 , Dp = 5 cm2/s , IJn = 10 μsec
    ɽr = 12 , ɽo = 8.85 × 10-14 F/cm , A = 1 cm2 , T = 300K , ni = 1.5 1010 .
    Calaulate:
    a) The junction capacitance at Va = 0V.
    b) The junction capacitance when İmax = 4× 105 V/cm.
    c) The stored charge (Qp) in the n-side for Va = 0.2 V.

    11) Given a silicon p+n diode with :


    ȡp = 1.5×10-3 ȍcm , μ p = 450 cm2/V.s , μ n = 1350 cm2/V.s ,ni = 1.5 × 1010 cm-3 ɽr = 12 ,
    ɽo = 8.85 × 10-14 F/cm.
    Calculate the junction capacitance at room temperature for a reverse bias of 10 V.

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