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    Guc 356 64 49019 2024-10-15T09 06 29

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    ec441craft

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    Guc 356 64 49019 2024-10-15T09 06 29

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    GUC_356_64_49019_2024-10-15T09_06_29 (1)

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    Guc 356 64 49019 2024-10-15T09 06 29

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    of 2

    th

    The German University in Cairo Electronics 5 Semester


    Faculty of Information Engineering & Technology Semiconductors (Elct 503)
    Electronics Department Fall 2014

    Problem Set 5

    1) An abrupt silicon p-n junction consists of a p-type region containing 2 x 1016 cm-3
    acceptors and an n-type region containing also 1016 cm-3 acceptors in addition to
    1017 cm-3 donors. [ ni = 1010 cm-3].
    a) Calculate the thermal equilibrium density of electrons and holes in the p-type
    region & in the n-type region.
    b) Calculate the built-in potential of the p-n junction.
    c) Calculate the built-in potential of the p-n junction at 400 K.

    2) An abrupt silicon pn junction at zero bias has dopant concentration of NA = 1017 cm-3
    and ND = 5×1015 cm-3, T=300K
    a) Calculate the Fermi level on each side of the junction with respect to the intrinsic
    Fermi level.
    b) Determine Vbi from the results of a).
    c) Determine Vbi from the equation and compare the results to part b).
    d) Determine xn & xp and the peak electric field for this junction.

    3) Consider the uniformly doped GaAs junction at T=300 K. At zero bias, only 20
    percent of the total space charge region is to be in the p region. The built in
    potential barrier is Vbi = 1.2 e.v. For zero bias determine
    a) NA , b) ND , c) xn , d) xp , e) Emax

    4) An abrupt silicon pn junction at T= 300K is uniformly doped with NA = 1018 cm-3


    and ND = 1015 cm-3, The pn junction area is 6×10-4 cm2 .An inductance of 2.2
    millihenry is placed in parallel with the pn junction.
    Calculate the resonant frequency of the circuit for reverse bias voltage of 10V.
    5) A silicon p+n junction has for VR1 = 0, C1 = 1.14pF , for VR2 = 3V, C2 = 0.52 pF
    and the cross-sectional area of the junction is 5×10-5 cm2. Show that if we plot 1/C2
    versus VR , the slope of the curve can be used to find ND and the intersection with
    the voltage axis yields Vbi .

    6) The total junction capacitance of a one-sided silicon pn junction at T=300K is


    measured at VR = 50mV and found to be 1.3 pF. The junction area is 10-5 cm2
    and Vbi = 0.95V.
    a) Find the impurity doping concentration of the low-doped side of the junction.
    b) Find the impurity doping concentration of the higher-doped region.

    7) We have a symmetric pn silicon junction (NA = ND = 1017 cm-3 ).If the electric
    field in the junction at breakdown is 5×105 V/cm , what is the reverse breakdown
    voltage in this junction?

    8) The electron concentration along a silicon bar at room temperature is given as:
    16 -3
    nn(x) = 4 ×10 cm (1- 0.5 ) for 0 < x < L where L= 2 m.x

    The electron concentration variations cause a diffusion current, which is


    completely compensated by the drift current generated by electric field E(x)
    occurring due the slight shift of the electrons in respect to the donor ions.
    2 -1 -1
    ( Jn = 0 for all x ).The electron mobility is μn = 1300 cm V s .
    a) Calculate the electric field distribution E(x) needed for compensation.
    b) Plot the band diagram along the silicon bar
    c) Calculate the diffusion current of the electrons Jn(x).
    d) Calculate the space charge distribution ρ(x) causing the field E(x).
    e) Determine the build-in voltage occurring between the ends of the silicon
    bar.

    _____________________________________________________________________

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