1. The document provides 10 problems related to advanced semiconductor device theory extracted from a textbook. It outlines guidelines for solving the problems, including providing physical pictures rather than just mathematical answers and the deadline. Plagiarism is not allowed.
2. The problems cover a range of topics in semiconductor device theory, including calculating carrier concentrations and drift current density for a gallium arsenide semiconductor, determining donor/acceptor concentrations to achieve a given current density in silicon, analyzing conductivity as a function of hole concentration, and determining bandgap energy, electric fields, and carrier concentrations/currents in various semiconductor structures.
3. Students are to solve the problems by the deadline of May 29, 2020 while following the
1. The document provides 10 problems related to advanced semiconductor device theory extracted from a textbook. It outlines guidelines for solving the problems, including providing physical pictures rather than just mathematical answers and the deadline. Plagiarism is not allowed.
2. The problems cover a range of topics in semiconductor device theory, including calculating carrier concentrations and drift current density for a gallium arsenide semiconductor, determining donor/acceptor concentrations to achieve a given current density in silicon, analyzing conductivity as a function of hole concentration, and determining bandgap energy, electric fields, and carrier concentrations/currents in various semiconductor structures.
3. Students are to solve the problems by the deadline of May 29, 2020 while following the
1. The document provides 10 problems related to advanced semiconductor device theory extracted from a textbook. It outlines guidelines for solving the problems, including providing physical pictures rather than just mathematical answers and the deadline. Plagiarism is not allowed.
2. The problems cover a range of topics in semiconductor device theory, including calculating carrier concentrations and drift current density for a gallium arsenide semiconductor, determining donor/acceptor concentrations to achieve a given current density in silicon, analyzing conductivity as a function of hole concentration, and determining bandgap energy, electric fields, and carrier concentrations/currents in various semiconductor structures.
3. Students are to solve the problems by the deadline of May 29, 2020 while following the
1. The document provides 10 problems related to advanced semiconductor device theory extracted from a textbook. It outlines guidelines for solving the problems, including providing physical pictures rather than just mathematical answers and the deadline. Plagiarism is not allowed.
2. The problems cover a range of topics in semiconductor device theory, including calculating carrier concentrations and drift current density for a gallium arsenide semiconductor, determining donor/acceptor concentrations to achieve a given current density in silicon, analyzing conductivity as a function of hole concentration, and determining bandgap energy, electric fields, and carrier concentrations/currents in various semiconductor structures.
3. Students are to solve the problems by the deadline of May 29, 2020 while following the
Department of Physics, School of Natural Sciences, NUST
EE903 Advanced Semiconductor Device Theory
Assignment # 2 Guide lines:
i. The following problems have been extracted from the Text Book by Donald Neamen. ii. It is recommended as well as required to give physical pictures corresponding to the problems rather than simply giving a mathematical answer. iii. The deadline for the assignment is Friday 29, May 2020 iv. The plagiarism is not allowed and misconduct will result in the reduction of score of both parties.
1. Consider a homogeneous gallium arsenide semiconductor at T = 300 K with Nd =
1016 cm-3 and Na = 0. (a) Calculate the thermal-equilibrium values of electron and hole concentrations. (b) For an applied E-field of 10 V-cm-1, calculate the drift current density. 2. A silicon crystal at room temperature having a cross-sectional area of 0.001 cm' and a length of 10-3 cm connected at its ends to a 10-V battery., calculate the density of donor atoms to be added to in order to get a current of 100 mA. b) If the initial concentration of donor atoms is Nd = 1015 cm-3, calculate the concentration of acceptor atoms to be added to form a compensated p-type material with the conductivity obtained in part (a). c) Calculate the average drift velocity of electrons for part (a). Now suppose that the concentrations of acceptor and donor atoms are same (Nd = Na = 1014 cm-3). Such a semiconductor is called compensated semiconductor. A compensated semiconductor behaves as an intrinsic material. What will be the impact on conductivity if Nd = Na = 1018 cm-3. d) 3. A semiconductor material has electron and hole mobilities n and p respectively. When the conductivity is considered as a function of the hole concentration p0, (a) show that the minimum value of conductivity, min can be written as ⁄
where i is the intrinsic conductivity, and (b) show that the corresponding hole ⁄ concentration is ( ) . 4. A particular intrinsic semiconductor has a resistivity of 50 -cm at T = 300 K and 5 - cm at T = 330 K. Neglecting the change in mobility with temperature, determine the bandgap energy of the semiconductor. 5. The hole concentration is given by p = 1015 exp(-x/Lp) cm-3 for x 0 and the electron concentration is given by 5 × I014 exp(+x/Ln) cm-3 for x 0. The values of Lp and Ln are 5 × l0-4 cm and l0-3 cm, respectively. The hole and electron diffusion coefficients are 10 cm2/s and 25 cm2/s, respectively. Calculate the total current density which is the sum of carrier current densities at x = 0. 6. The electron concentration in silicon at T = 300 K is given by
( )
where x is measured in m and is limited to 0 x 25 m. The electron diffusion
coefficient is Dn = 25 cm2/s and the electron mobility is n = 960 cm2/V-s. The total electron current density through the semiconductor is constant and equal to Jn = -40 A/cm2. The electron current has both diffusion and drift current components. Determine the electric field as a function of x which must exist in the semiconductor. 7. The total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and is equal to 1016 cm-3. The hole concentration is given by
( )
The hole diffusion coefficient is Dp = 12 cm2/s and the electron mobility is n = 1000 cm2/V-s. The total current density is J = 4.8 A/cm2. Calculate the expressions for (a) the hole diffusion current density (b) the electron current density and (c) the electric field as a function of x.
8. A constant electric field, E = 12 V/cm, exists in the +x direction of an n-type Ga-As
semiconductor at room temperature having n = 8000 cm2/V-s for 0 x 50 m. The total current density is (J = 100 A/cm2) a constant. At x = 0, the drift and diffusion currents are equal. (a) Determine the expression for the electron concentration n(x). (b) Calculate the drift and diffusion current densities at x = 50 m. (c) Now suppose that the electron concentration is given by n = 1016 (1 - x/L) cm-3 for 0 x 50 m. The electron mobility and diffusion coefficients are n = 1000 cm2/V-s and Dn = 25.9 cm2/s. Determine the electric field as a function of x required to maintain a total current density (J = -80 A/cm2) over the entire range of x.
9. Consider a semiconductor in thermal equilibrium (no current). Assume that the donor concentration varies exponentially as Nd(x) = Nd0exp(-x) over the range 0 x 1/ where Nd0 is a constant. (a) Calculate the electric field as a function of x for the mentioned range (b) Calculate the potential difference between x = 0 and x = 1/.
10. (a) Show that the Hall coefficient is related to the Hall voltage as | || |
