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tutorial_1

The document outlines a tutorial for EE 207: Electronic Devices and Circuits, covering various problems related to semiconductor physics and crystallography. Topics include calculations of silicon atom density, lattice plane distances, density of cubic lattices, reciprocal lattices, electron energy expressions, and carrier concentrations in doped silicon. Additionally, it addresses the effects of temperature on resistivity and diffusion equations for electron distribution.

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jayeshjsrv
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4 views

tutorial_1

The document outlines a tutorial for EE 207: Electronic Devices and Circuits, covering various problems related to semiconductor physics and crystallography. Topics include calculations of silicon atom density, lattice plane distances, density of cubic lattices, reciprocal lattices, electron energy expressions, and carrier concentrations in doped silicon. Additionally, it addresses the effects of temperature on resistivity and diffusion equations for electron distribution.

Uploaded by

jayeshjsrv
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 207: Electronic Devices and Circuits (spring 2024)

Tutorial 1
(1) Si crystallizes in diamond lattice. The conventional cubic lattice constant is 5.43 A o. Find
the no. of Si atoms per cm3.

(2) Consider a set of lattice planes indexed as (h,k,l) in a cubic lattice. Find out the distance
between two adjacent lattice planes.

(3) Consider a Bravais lattice. Suppose identical solid sphere are kept at each lattice positions,
such that the neighbouring spheres just touch without overlapping. Such an arrangement is
called a close packing arrangement. Assuming the spheres have unit density, find out the
density of cubic lattice.

(4) (a) Find out reciprocal lattice of simple cubic lattice with lattice constant a. (b) Show that
the reciprocal lattice of fcc is bcc.

(5) Consider a system of electrons with effective mass m*. Write down the expression for
average energy per particle in terms of the temperature and Fermi level position w.r.t. to the
bottom of the band. Simplify the expression assuming Ec-EF>>kBT.

(6) Consider a band with effective mass tensor near the bottom of conduction band given by

1 / m x 0 0 
M 1
  0 1/ m y 0 
 0 0 1 / m z 

Write down the expression of energy as a function of k near the band minima. If electric field
is applied in the x-y plane with 45o angle with x-axis, what will be the direction of acceleration
of the electron?

(7) A Si bar 0.1 cm long and 100 m2 in cross-sectional area is doped with 1016 /cm3 of B.
(Assume, n=1184 cm2/V-s, p=429 cm2/V-s)

(a) Find carrier concentrations and Fermi level position with respect to the conduction and
valence band edges at 300K. Draw schematic energy band diagram. Is the semiconductor in
non-degenerate limit? (b) Find current at 300k with 1V applied.

(8) Estimate upper limit on the to the carrier concentration in Si for it to be a non-degenerate
semiconductor at room temperature.

(9) A lightly doped Si sample with ND=1014 /cm3 is heated from room temperature to 400 K.
ND>>ni at both the temperatures. Is the resistivity of the sample expected to increase or
decrease?

(10) Consider the following diffusion eqn. in 1d (The R-G terms are absent):
n  2 ( n)
 Dn
t x 2

If the electron distribution at t=0 is given by:

1 x2
n( x, 0)  exp(  )
 2 2 2

Find out n(x, t). What happens in the limit  0?

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