Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd
Upload
3 views

Tutorial#2

Uploaded by

ep21b034
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
3 views

Tutorial#2

Uploaded by

ep21b034
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

EE3001: Solid State Devices

TAs: Alias George (ee24d402@smail.iitm.ac.in) and Binoy M (ee23s014@smail.iitm.ac.in)


Assignment #2

Try yourself to solve the problems with detailed steps. Take a limited time quiz to test
your understanding on related concepts.
Problems will be discussed during the tutorial class. You need to contact TAs or teacher
if you are unable to do anything useful by yourself or with the help of your friends.
If needed, assume the following values by default unless otherwise specified: Si is
the default semiconductor; SiO2 is the default oxide; T @room temperature is 300 K;
ni @room temp. = 1010 cm−3 ; k B T=0.026 eV (at room temperature); EG,Si = 1.12 eV and
temperature independent; at 300 K, Nc =2.8 × 1019 cm−3 and Nv =1.02 × 1019 cm−3

1. (a) If Nc represents the density of states in a strip αkT wide near the edge of the
conduction band, determine the value of α.
(b) Obtain ( Ec − EF ) at room temperature for electron concentrations of (i) 5 × 1014
cm−3 , (ii) 5 × 1017 cm−3 and (iii) 1019 cm−3 in Si. Show the positions of EF in the en-
ergy bandgap. Comment on the applicability of Boltzmann approximation in various
cases.

2. (a) For a non-degenerate Si sample at room temperature, Ec - E f = 4.1k B T. Calculate


the probability of finding an electron at an energy level of k B T above the conduction
band.
(b) Find the doping concentration in the Si sample at T=300 K if all the dopant atoms
are ionized.
√
3. In a semi-log axis the plot of 1/k B T (linear x-axis in per eV) versus ni / Nc Nv (loge
y-axis) for a semiconductor sample appears to be linear with a slope of −0.71 near
T=300 K. What is the band-gap of the semiconductor?

4. The average kinetic energy of electrons in the conduction band is given by the follow-
ing relation R∞
( E − Ec ) D ( E) f ( E)dE
< K.E >= Ec R ∞
Ec D ( E ) f ( E ) dE

For a non-degenerate semiconductor in which f ( E) can be approximated by the Maxwell-


Boltzmann distribution, if the average kinetic energy is given by λ k B T, find the value
of λ. Here D(E) denotes the density of states in conduction band.

5. (a) For a pure Si sample, if the temperature is increased from 300 K to 400 K, find the
ratio of the intrinsic carrier concentration, ni (400K )/ni (300K ).

1
(b) At 400 K, what are the values of ni for (i) Ge (Eg = 0.66 eV, Nc = 1019 cm−3 , Nv =
6 × 1018 cm−3 ) and (ii) GaAs (Eg = 1.42 eV, Nc = 4.7 × 1017 cm−3, Nv = 7 × 1018 cm−3 )?
Note that given values of Nc and Nv are in 300 K.

6. (a) A Si sample already doped with acceptor atoms (NA = 1014 cm−3 ) is further doped
with donor atoms (ND cm−3 ). Calculate the free carrier concentration (n and p) for (i)
ND = NA ; (ii) ND = 5NA ; (iii) NA = 3ND ;
(b) Check and comment if the calculations of n and p are simplified when | ND −
NA | ≪ 2ni or | ND − NA | ≫ 2ni .
(c) Plot the concentration of n and p as a function of ND (varying from 1013 cm−3 to
1017 cm−3 ) if NA is fixed at 1015 cm−3 .
(d) If the Si sample in (a) has no donor doping, calculate the ratio, p/n at (i) 300 K,
(ii) 400 K, (iii) 500 K and (iv) 600 K and plot corresponding EF − Ei as a function of
temperature.

You might also like