Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd
Upload
114 views

Assignment 1: BRAC University ECE230&EEE209 (Semiconductor Materials and Devices) Summer 2020

This document contains an assignment with 8 questions related to semiconductor materials and devices. The questions calculate probabilities of energy state occupations, intrinsic carrier concentrations, thermal equilibrium carrier concentrations, and Fermi energy level positions for various semiconductors including silicon, gallium arsenide, and germanium at different temperatures and doping levels. The key semiconductor parameters like effective density of states, band gaps, and intrinsic carrier concentrations are provided.

Uploaded by

REDWAN AHMED MIAZEE
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
114 views

Assignment 1: BRAC University ECE230&EEE209 (Semiconductor Materials and Devices) Summer 2020

This document contains an assignment with 8 questions related to semiconductor materials and devices. The questions calculate probabilities of energy state occupations, intrinsic carrier concentrations, thermal equilibrium carrier concentrations, and Fermi energy level positions for various semiconductors including silicon, gallium arsenide, and germanium at different temperatures and doping levels. The key semiconductor parameters like effective density of states, band gaps, and intrinsic carrier concentrations are provided.

Uploaded by

REDWAN AHMED MIAZEE
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

BRAC University

ECE230&EEE209 (Semiconductor Materials and Devices)


Summer 2020
_____________________________________________________________________________________________________________________

Assignment 1

1. Assume the Fermi energy level is 0.30 eV below the conduction band energy.
(a) Determine the probability of a state being occupied by an electron at Ec (b) Repeat
part (a) for an energy state at Ec + kT. Assume T = 300 K.

2. Assume the Fermi energy level is 0.35 eV above the valence band energy.
(a) Determine the probability of a state being empty of an electron at Ev (b) repeat
part (a) for an energy state at Ev- kT. Assume T = 300 K.

3. Calculate the probability that a state in the conduction band is occupied by an electron
and calculate the thermal equilibrium electron concentration in silicon at T= 100 K.
Assume the Fermi energy is 0.25 eV below the conduction band. The value of Nc for
silicon at T = 100 K is Nc, = 2.8 x I019 cm-3.

4. Determine the thermal equilibrium electron and hole concentration in GaAs at T =


300 K for the case when the Fermi energy level is 0.30 eV above the valence band
energy Ev

5. A Si sample is doped with 5×1016 B atoms/cm3. What is the equilibrium electron


concentration p0 at 300 K? Determine the position of EF relative to Ei and draw the
band diagram indicating the position of the Fermi level. (Assume ni = 1.5×1010 cm-3
and kT = 0.026 eV at T = 300 K).

6. A hypothetical semiconductor has a intrinsic carrier concentration of 5×1015 cm-3 at


350 K temperature. It has conduction and valence band effective density of states Nc
and Nv, both equal 1019 cm-3 at the same temperature. Find out the energy band gap.
7. The effective density of states of Si, GaAs and Ge at T=300 K are as below. Calculate
the intrinsic carrier concentration for each of the semiconductors at T = 300 K and at
T = 400 K.

Ge Si GaAs

Nc (cm-3) 1.02х1019 2.81х1019 4.35х1017

Nv (cm-3) 5.64х1018 1.83х1019 7.57х1018

8. Consider a compensated GaAs semiconductor at T = 300 K. Nd= 5 x 1016 cm-3 and Na


= 6 x 1015 cm-3. Calculate the thermal equilibrium electron and hole concentrations.
Determine the position of the Fermi level with respect to the valence band energy.
(ni=1.8 x 106 cm-3 and Eg=1.42 eV for GaAs).

You might also like