Z04E

Z04xxxE/F
SENSITIVE GATE TRIACS

FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
IGT 3mA to 10mA
A1
A2
A1
A2
DESCRIPTION
The Z04xxxE/F series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where gate high sensitivity is
required.
TO202-1
(Plastic)
TO202-2
(Plastic)
Z04xxxE
Z04xxxF
ABSOLUTE RATINGS (limiting values)

Symbol
IT(RMS)
ITSM
I2 t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM
VRRM
January 1995
Parameter
Value
Unit
A
Z04xxxE/F
Tc= 75 C
Z04xxxF
Ta= 25 C
0.95
Non repetitive surge peak on-state current

(Tj initial = 25C )
tp = 8.3 ms
22
tp = 10 ms
20
I2t Value for fusing
tp = 10 ms
A2s
Critical rate of rise of on-state current

diG /dt = 0.1 A/s.
IG = 50 mA
Repetitive
F = 50 Hz
10
A/s
Non
Repetitive
50
RMS on-state current

(360 conduction angle)
Storage and operating junction temperature range

Maximum lead temperature for soldering during 10s at
4.5mm from case
- 40, + 150
- 40, + 125
260
Voltage
Parameter
Repetitive peak off-state voltage
Tj = 125C
Unit
400
600
700
800
1/6
Z04xxxE/F
THERMAL RESISTANCES
Symbol
Rth(j-a)
Parameter
Junction to ambient
Value
Unit
Z04xxxE
80
C/W
Z04xxxF
100
Rth(j-c)
Junction to case for D.C
10
C/W
Rth(j-c)
Junction to case for A.C 360 conduction angle (F=50Hz)
7.5
C/W
GATE CHARACTERISTICS (maximum values)

PG (AV)= 0.2 W PGM = 3 W (tp = 20 s)
IGM = 1.2 A (tp = 20 s)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Sensitivity
Quadrant
Unit
02
05
09
10
IGT
VD=12V (DC) RL=33
Tj= 25C
I-II-III-IV
MAX
VGT
VD=12V (DC) RL=33
Tj= 25C
I-II-III-IV
MAX
1.5
VGD
VD=VDRM RL=3.3k
Tj= 125C
I-II-III-IV
MIN
0.2
tgt
VD=VDRM IG = 40mA
IT = 5.5A
dIG/dt = 0.5A/s
Tj= 25C
I-II-III-IV
TYP
IH *
IT= 50 mA Gate open
Tj= 25C
IG= 1.2 IGT
Tj= 25C
IL
mA
MAX
10
mA
I-III-IV
TYP
10
mA
II
TYP
10
20
VTM *
ITM= 5.5A tp= 380s
Tj= 25C
MAX
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25C
MAX
Tj= 110C
MAX
200
Tj= 110C
MIN
10
20
100
TYP
20
50
150
MIN
TYP
dV/dt *
(dV/dt)c *
VD=67%VDRM
Gate open
(dI/dt)c = 0.55 A/ms
Tj= 110C
(dI/dt)c = 1.8 A/ms
V/s
V/s
* For either polarity of electrode A2 voltage with reference to electrode A1

ORDERING INFORMATION
04
05
E
PACKAGES :
E=TO202-1 F=TO202-2
TRIAC TOP GLASS

CURRENT
SENSITIVITY
2/6
VOLTAGE
Z04xxxE/F
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (TO202-1).
180
= 120
o
= 90
o
= 60
= 30
Rth = 0 C/W
o
5 C/W
o
10 C/W
15 o C/W
= 180
0
0
T(RMS)
-115
o
Tamb ( C)
0
0
20
60
80
100
120
Fig.4 : Correlation between maximum RMS power

dissipation and maximum allowable temperature
(Tamb and Tcase) (TO202-2).
Tcase (o C)
-75
= 180
= 120
o
= 90
o
-85
-95
= 60
-105
0
0
Rth(j-c)
= 30
-125
140
T(RMS)
-115
Rth(j-a)
(A)
Fig.5 : RMS on-state current versus case temperature (TO202-1).

I T(RMS) (A)
Tamb ( C)
0
0
20
40
60
80
100
120
-125
140
Fig.6 : RMS on-state current versus case temperature (TO202-2).

I
T(RMS)
(A)
0.8
0.6
= 180
= 180
0.4
0.2
o
Tcase( C)
0
0
40
P (W)
180
-85
-105
P(W)
-75
-95
(A)
Fig.3 : Maximum RMS power dissipation versus

RMS on-state current .
Tcase (o C)
P (W)
P(W)
Tamb(oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
3/6
Z04xxxE/F
Fig.7 : Relative variation of thermal impedance
versus pulse duration (TO202-1).
Fig.8 : Relative variation of thermal impedance

junction to ambient versus pulse duration
(TO202-2).
Zth(j-a)/Rth(j-a)
Zth/Rth
1.00
1.00
Zth (j-c)
Zth (j-a)
0.10
0.10
tp( s)
0.01
1E-3
1E-2
1E-1
1 E+0
1 E+1
tp (s)
1E +2 5 E +2
Fig.9 : Relative variation of gate trigger current and

holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
o
Ih[Tj=25 C]
1E-2
1E-1
1 E+0
1 E+1
1 E +2 5 E+2
Fig.10 : Non repetitive surge peak on-state current

versus number of cycles.
ITSM(A)
20
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
1E-3
Tj initial = 25 C
15
Igt
10
Ih
5
Number of cycles
Tj(oC)
-40
-20
20
40
60
80
100
120 140
Fig.11 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms,
and corresponding value of I2t.
I TSM (A). I2 t (A2 s)
0
1
100
100 0
Fig.12 : On-state characteristics (maximum values).
100
100
10
I TM (A)
Tj initial = 25oC
Tj initial
o
25 C
10
I TSM
10
Tj max
Tj max
Vto =0.98V
Rt =0.180
1
I2 t
VTM (V)
tp (ms)
1
1
10
4/6
0.1
0
0.5
1.5
2.5
3.5
4.5
Z04xxxE/F
PACKAGE MECHANICAL DATA
TO202-1 (Plastic)
REF.
DIMENSIONS
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
I
B
C
M
O
F
P
N1
N
10.1
0.398
13.7
0.540
C
D
7.3
10.5
0.287
0.413
F
G
3.2
0.126
H
I
0.51
0.020
1.5
0.059
M
N
4.5
0.177
N1
2.54
O
P
1.5
3.16
0.059
3.20
0.124 0.126
5.3
0.209
0.100
1.4
0.7
0.055
0.028
Marking : type number

Weight : 1.4 g
5/6
Z04xxxE/F
PACKAGE MECHANICAL DATA
TO202-2 (Plastic)
DIMENSIONS
REF.
C
M
O
F
P
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
N1
10.1
B
C
1.2
7.3
0.047
0.287
10.5
0.413
E
F
7.4
0.51
0.020
J
M
1.5
4.5
0.059
0.177
N1
O
P
0.290
1.5
0.398
0.059
5.3
2.54
0.209
0.100
1.4
0.055
0.7
0.028
Marking : type number

Weight : 1.0 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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Z04xxxE/F

SENSITIVE GATE TRIACS

ABSOLUTE RATINGS (limiting values)

Non repetitive surge peak on-state current

I2t Value for fusing

Critical rate of rise of on-state current

RMS on-state current

Storage and operating junction temperature range

Junction to case for D.C

Junction to case for A.C 360 conduction angle (F=50Hz)

GATE CHARACTERISTICS (maximum values)

IGM = 1.2 A (tp = 20 s)

VD=12V (DC) RL=33

VD=12V (DC) RL=33

IT= 50 mA Gate open

IG= 1.2 IGT

ITM= 5.5A tp= 380s

(dI/dt)c = 1.8 A/ms

* For either polarity of electrode A2 voltage with reference to electrode A1

TRIAC TOP GLASS

Fig.2 : Correlation between maximum RMS power

Fig.4 : Correlation between maximum RMS power

Fig.5 : RMS on-state current versus case temperature (TO202-1).

Fig.6 : RMS on-state current versus case temperature (TO202-2).

Fig.3 : Maximum RMS power dissipation versus

10 20 30 40 50 60 70 80 90 100 110 120 130

10 20 30 40 50 60 70 80 90 100 110 120 130

Fig.8 : Relative variation of thermal impedance

Fig.9 : Relative variation of gate trigger current and

Fig.10 : Non repetitive surge peak on-state current

Fig.12 : On-state characteristics (maximum values).

Marking : type number

Marking : type number

1995 SGS-THOMSON Microelectronics - All rights reserved.

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