Module2 PDF
Module2 PDF
Unit 2
TRANSISTOR (BJT)
Review Questions
1 Define current gains and . How are they related?
2 In transistor design, the base has most critical features as
compared to emitter and collector. Discuss.
3 Why do we bias a transistor? What are the considerations in
choosing an appropriate biasing scheme?
4 Draw I - V characteristics (Collector characteristics) for a
transistor and discuss the salient features.
5 Explain base width modulation
and its influence on
transistor characteristics.
6 What is collector feedback bias? How does this biasing
provide stability to the circuit?
7 Give reasons for the wide use of voltage divider bias in BJT
amplifiers.
8 Discuss the flow of three currents IE, IB and IC in a forward
biased emitter junction and reverse biased collectior
junction.
Problems
2.1 A transistor has current gain of 0.99 when used in common base (CB) configuration.
How much will be the current gain of this transistor in common emitter (CE)
configuration ?
Solution :- The current gain in common base circuit is written as , and it has been
given equal to 0.99.
and current gain in common emitter configuration are related as
Therefore,
0.99
= 99
1 0.99
or = 99
2.2 Determine the minimum value of current gain required to put the transistor in
saturation when
Vin = +5V.
Assume, VBE(sat) = 0.8 V,
VCE(sat) = 0.12 V
+12V
V
5k
IB
Vin
80k
k VBE
IC
+
VCE
-
Solution:- Let IB and IC be base current and collector current respectively (see fig.
above).
Taking +5V as input voltage Vin, the summation of voltages (Kirchhoffs voltage law,
KVL) in the base-emitter loop gives
8 X 103 X IB + VBE 5V = 0
We assume that the transistor is in saturation, so that
VBE = VBE(Sat) = 0.8 V
Therefore ,
80 X 103 X IB + 0.8 V 5V = 0
or ,
IB
4.2V
0.0525mA
80 10 3
or
IC
12 0.2
2.36mA
5 103
And the condition for the transistor in saturation is that the minimum value of gain ,
2.36mA
min I C I
45,
B
0.525mA
or min = 45.
2.3 The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V.
(a) Find the collector current, IC, and voltage VCE, if of transistor is 60.
(b) Find IC and VCE if changes to 80.
What conclusions may be drawn?
+VCC (9V)
60k
k
0.5k
VBE
+
VCE
-
VCC VBE
9 0.7
0.138 mA
RB
60 10 3
and,
IC = IB
= 60 X 0.138 mA
IC = 8.28 mA
Summation of voltages in the collector circuit gives,
RCIC +VCE = VCC
Or VCE = VCC ICRC
= 9 - 8.28 X 10-3 X 0.5 X 103
= 9 4.14
Or VCE = 4.86 V
Thus the operating point values are
IC = 8.28 mA , and
VCE = 4.86 V
(b) Proceeding in the same way, and if the current gain equals 80, then
2.4 Find out the operating point current ICQ, and voltage VCEQ in the circuit shown.
(VBE = 0.7 V, of transistor is 200).
+9V(VCC)
2.5k
50k
k
RE
RC
IC
+
VCE
4.3k
-9V(VEE)
Solution:Considering the potential difference across the resistor RE, the emitter current IE (IC)
may be written as,
I E IC
VEE VBE
9 0.7
RE
4.310 3
or IC = ICQ = 1.93 mA
Voltage summation in the collector circuit leads to,
VCC = RCIC + VCE
or VCE = VCC RCIC
= 9 2.5 X 103 X 1.93 X 10-3
= 9 4.83
or VCE = VCEQ = 4.17V
2.5 Calculate the approximate value for the base resistor RB which will forward bias the
emitter junction of silicon transistor ( = 100) in the circuit. Collectior emitter voltage
VCE of 2.5 V reverse biases the collector.
(VBE = 0.7V)
+5V
RB
IC
VBE
1.5k
+
VCE
IE
1k
Solution:We assume that the emitter junction is in forward bias and VBE = 0.7V.
Summation of voltages in the base-emitter circuit results in,
RBIB +VBE + REIE = VCC
Since IC = IE,
and I B or I B
IC
IE
RB .
IE
VBE RE I E VCC
or I E B RE 4.3
( A)
2.5
2.5
1 mA
RC RE 1.5 1 10 3
RB = 330 X 103
or RB = 330 k
2.6 The operating point values of current IC(=ICQ) and voltage VCE(=VCEQ) in the circuit
have magnitudes of 0.9 mA and 3.72 V respectively when the current gain for the
transistor is 100. The transistor in the circuit is replaced by another one with = 200.
Calculate the new values of ICQ and VCEQ. What do you infer?
+6V (VCC)
R1
R2
4k
2k
RC
0.7V
1k
IC
+
VCE
1.3k
VTH
2 10 3
VCC
2 10 3 4 10 3
2
6
6
2V
That is VTH = 2V
And, as we have derived the relation earlier,
I E I CQ
VTH VBE
RE RTH
R2 = 4k 2k = 1.33 k,
2 0.7
1.310 0.006 10 3
0.995 mA
I E I C I cQ
or I CQ
Inference:
The circuit is highly stable as the change in collector current is 0.995 0.99 = 0.005 mA
only (change is 0.5%) which is negligible. Similarly VCE changes only 0.3% which is
also negligible when changes by 100% i.e from 100 to 200.
(2.7) Calculate the value of resistor RB in the circuit shown to put VCE at 3.0V
(VBE = 0.7V and = 80)
+9V
RB
IB
RC
2k
IC
IE
VBE
RE
3k
IC
IC
80
IC
3k I C VCC VBE
80
9 0.7 8.3
I
or RB . C 3k . I C 8.3 ( A)
80
RB .
ICRC + VCE + IE X 3k = 9V
or IC X 2k + 3.0V + IC X 3k = 9V
or IC (2k +3k) = 9 - 3 = 6V
or I C
6V
1.2mA
5k
1.2
3k 1.2 mA 8.3V
80
4.7
or RB
313.3 k
0.015 mA
RB 313 k
RB .