Using Internal EEPROM of PIC Microcontroller
Using Internal EEPROM of PIC Microcontroller
Using Internal EEPROM of PIC Microcontroller
There are commonly three types of memories in a PIC Microcontroller, Flash Program Memory,
Data Memory (RAM) and EEPROM Data Memory. We write Programs in the Flash Program
Memory of a microcontroller. Flash memory makes it possible to program a microcontroller
many times before installing to device and even after the installation we can change the program.
RAM Data Memory is used for storing data temporarily during program execution and it is
volatile. That is, this memory is cleared when the power is gone or after CPU reset. RAM Data
Memory locations are also called General Purpose Registers (GPR). These two memories have
faster response time. The third memory is EEPROM memory which is an abbreviation
for Electrically Erasable Programmable Read Only Memory. EEPROM memory can be read and
write electrically, can be accessed through program. It is a non volatile memory but has slower
response time. EEPROM memory can be used to store data such as sensor logs, device
parameters which should not be loss during power loss or CPU reset. Here I using PIC 16F877A
for explanation.
The data in the EEPROM and Flash Program Memory can be read/write during normal
operations (over full VDD range). These memories are not mapped in the register file space,
instead of it can be accessed through the following six Special Function Registers (SFR) for read
and write operations.
EECON1
EECON2
EEDATA
EEDATH
EEADR
EEADRH
EEDATA register hold 8-bit data for read/write and EEADR holds the address of EEPROM
memory location to be accessed. PIC Microcontrollers usually have 128/256 bytes of data
EEPROM memory with address ranging from 00h to FFh. On devices having 128 bytes, memory
locations from 80h to FFh are unimplemented and will be wraparound to beginning of the data
EEPROM memory. On-Chip charge pump (used while writing data to EEPROM) is turned off
when writing these unimplemented locations. EEDATH and EEADRH registers are used
when interfacing program memory block with Program Flash Memory. Here we deals only with
EEPROM data memory.
EEPROM data memory allows only single byte read and write. When a data byte is written in to
EEPROM, automatically erases the particular location first and then writes the new data (erase
before write). The write time is controlled by and on-chip timer and write/erase voltages are
generated automatically by an on-chip charge pump. When the device is code protected, program
or data memory will not be accessible to programmer but CPU may read or write data EEPROM
memory.
EEPGD control bit is used to select Program Memory or Data Memory access. If it is set
Program Memory is selected and vice versa. Control bits RD, WR are used to initiate read, write,
erase operations. These bit cannot be cleared in program, only able to set. These bits are cleared
in hardware on the completion of read or write operations.
The WREN control bit is the Write Enable bit, when set it enables write or erase operation. On
power-up, the WREN bit will be automatically cleared. The WRERR bit is the Write Error Flag
bit, it sets when a write (or erase) operation is interrupted by a MCLR or a WDT Time-out Reset
during normal operation. In these situations, we can check the WRERR bit and rewrite the
location as the data and address will be unchanged in the EEDATA and EEADR registers.
On the completion of write operation Interrupt flag bit, EEIF in the PIR2 register is set. It must
be cleared in program.
EECON2 register is not a physical register and it is used exclusively in the EEPROM write
sequence. Reading EECON2 will read all zeros.
9. WR control bit is cleared and EEIF interrupt flag bit is set after completion of the write
operation. EEIF bit must be cleared in the program.
Eeprom_Read
Eeprom_Write
Eeprom_Read
Prototype: unsigned short EEPROM_Read(unsigned int address);
Eeprom_Read function reads data from a specified address. Note that parameter address is of
integer type, which implies that this functions supports microcontrollers with more than 256
bytes of EEPROM. There must me atleast 20ms delay between successive using of these
routines.
Eeprom_Write
Prototype: void EEPROM_Write(unsigned int address, unsigned short data);
EEPROM_Write function write data to the specified address. As I said above, since the address
parameter is of integer type, it supports microcontrollers with more than 256 bytes of
EEPROM. There must me atleast 20ms delay between successive using of these routines.
Beware that all Interrupts will be disabled during the execution of this function.
Note: Address ranges from 00h to FFh for devices having 256 bytes while for 128 bytes devices
it is 00h to 7Fh.
Mikro Code
void main()
{
unsigned int a, i;
TRISC = 0;
do
{
for(i=0,a=1;i<8;i++)
{
EEPROM_Write(i, a);
a = a<<1;
}
for(i=0;i<8;i++)
{
PORTC = EEPROM_Read(i);
Delay_ms(1000);
}
}while(1);
}
Circuit Diagram
In this example we writes 00000001 to the first memory location, 00000010 to second,
000000100 to third etc sequentially up to 10000000. Then it is read sequentially and output
through PORTC.