FUJITSU SEMICONDUCTOR

DATA SHEET DS04-27200-6E

ASSP For Power Management Applications

BIPOLAR

Switching Regulator Controller

(Switchable between push-pull and single-end functions)

MB3759
DESCRIPTION
The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.
The IC contains most of the functions required for switching regulator control circuits. This reduces both the
component count and assembly work.

FEATURES
Drives a 200 mA load
Can be set to push-pull or single-end operation
Prevents double pulses
Adjustable dead-time
Error amplifier has wide common phase input range
Built in a circuit to prevent misoperation due to low power supply voltage.
Built in an internal 5 V reference voltage with superior voltage reduction characteristics

PACKAGES

16-pin plastic DIP 16-pin ceramic DIP 16-pin plastic SOP

(DIP-16P-M04) (DIP-16C-C01) (FPT-16P-M06)

 MB3759

PIN ASSIGNMENT

(TOP VIEW)

+IN1 1 16 +IN2

IN1 2 15 IN2

FB 3 14 VREF

DT 4 13 OC

CT 5 12 VCC

RT 6 11 C2

GND 7 10 E2

C1 8 9 E1

(DIP-16P-M04)
(DIP-16C-C01)
(FPT-16P-M06)

BLOCK DIAGRAM

Output
control
OC
13

RT 6 8 C1
Q
OSC T
CT 5 9 E1
Q
= 0.2 V 11 C2
Dead time DT 4 10 E2
control
Error amp.1
12 VCC
+IN1 1 +
A1 PMW comparator Reference
IN1 2 14 VREF
regurator
+IN2 16 +
A2 7 GND
IN2 15
Error amp.2
Feed back FB 3

2
 MB3759

ABSOLUTE MAXIMUM RATINGS

Rating Unit
Parameter Symbol Condition
Min Max
Power supply voltage VCC 41 V
Collector output voltage VCE 41 V
Collector output current ICE 250 mA
Amplifier input voltage VI VCC + 0.3 V
Plastic DIP Ta +25 C 1000
Power dissipation Ceramic DIP PD Ta +60 C 800 mW
SOP * Ta +25 C 620
Operating temperature Top 30 +85 C
Storage temperature Tstg 55 +125 C
*: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness)
The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness)
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
RECOMMENDED OPERATING CONDITIONS
Value
Parameter Symbol Unit
Min Typ Max
Power supply voltage VCC 7 15 32 V
Collector output voltage VCE 40 V
Collector output current ICE 5 200 mA
Amplifier input voltage VIN 0.3 0 to VR VCC 2 V
FB sink current ISINK 0.3 mA
FB source current ISOURCE 2 mA
Reference section output current IREF 5 10 mA
Timing resistor RT 1.8 30 500 k
Timing capacitor CT 6
470 1000 10 pF
Oscillator frequency fosc 1 40 300 kHz
Operating temperature Top 30 +25 +85 C
Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power con-
sumption if using a high supply voltage.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the devices electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.

3
 MB3759

ELECTRICAL CHARACTERISTICS
(VCC = 15 V, Ta = +25 C)
Value
Parameter Symbol Condition Unit
Min Typ Max
Output voltage VREF IO = 1 mA 4.75 5.0 5.25 V
7 V VCC 40 V,
Input regulation VR(IN) 2 25 mV
Ta = +25 C
1 mA IO 10 mA,
Load regulation VR(LD) 1 15 mV
Ta = +25 C
20 C Ta
Reference Temperature stability VR/T 200 750 V/C
+ 85 C
section
Short circuit output
ISC 15 40 mA
current
Reference lockout
4.3 V
voltage
Reference hysteresis
0.3 V
voltage
RT = 30 k,
Oscillator frequency fosc 36 40 44 kHz
CT = 1000 pF
Standard deviation RT = 30 k,
3 %
Oscillator of frequency CT = 1000 pF
section Frequency change 7 V VCC 40 V,
0.1 %
with voltage Ta = +25 C
Frequency change with 20 C Ta
fosc/T 0.01 0.03 %/C
temperature +85 C

Input bias current ID 0 VI 5.25 V 2 10 A

Maximum duty cycle (Each

VI = 0 40 45 %
Dead-time output)
control section 0% duty
Input VDO 3.0 3.3 V
cycle
threshold
voltage Max. duty
VDM 0 V
cycle

(Continued)

4
 MB3759

(Continued)
(VCC = 15 V, Ta = +25 C)
Value
Parameter Symbol Condition Unit
Min Typ Max
Input offset voltage VIO VO (pin3) = 2.5 V 2 10 mV
Input offset current IIO VO (pin3) = 2.5 V 25 250 nA
Input bias current II VO (pin3) = 2.5 V 0.2 1.0 A
Common-mode input
VCM 7 V VCC 40 V 0.3 VCC 2 V
voltage
Open-loop voltage
Error AV 0.5 V VO 3.5 V 70 95 dB
amplification
amplifier
section Unity-gain bandwidth BW AV = 1 800 kHz
Common-mode
CMR VCC = 40 V 65 80 dB
rejection ratio
-5 V VID -15 mV,
Output sink ISINK ISINK
VO = 0.7 V
0.3 0.7 mA
current
(pin 3) 15 mV VID 5V,
ISOURCE ISOURCE 2 10 mA
VO = 3.5 V
VCE = 40 V,
Collector leakage current ICO 100 A
VCC = 40 V
VCC = VC = 40 V,
Emitter leakage current IEO 100 A
VE = 0
Output Collector Emitter
VSAT(C) VE = 0, IC = 200 mA 1.1 1.3 V
section emitter grounded
saturation Emitter VC = 15 V,
voltage VSAT(E) 1.5 2.5 V
follower IE = 200 mA
Output control input
IOPC VI = VREF 1.3 3.5 mA
current
PWM Input threshold voltage VTH 0% Duty 4 4.5 V
comparator
section Input sink current (pin 3) ISINK VO (pin3) = 0.7 V 0.3 0.7 mA

V(pin4) = 2 V,
Power supply current ICC 8 mA
See Fig-2
V(pin6) = VREF,
Standby current ICCQ 7 12 mA
I/O open
Rise time Emitter tR RL = 68 100 200 ns

Switching Fall time grounded tF RL = 68 25 100 ns

characteristics Rise time Emitter tR RL = 68 100 200 ns
Fall time follower tF RL = 68 40 100 ns

5
 MB3759

TEST CIRCUIT

VCC = 15V
150 /2 W

150 /2 W
VD VCC
DT C1 OUTPUT 1
TEST
INPUT VC E1
FB
RT C2 OUTPUT 2
30 k
CT E2
1000 pF IN1
+IN1
IN2
+IN2 VREF
OC
GND
50 k

OPERATING TIMING

Voltage at CT = 3.0 V

VC
VD

=0 V

OUTPUT 1

ON ON ON ON

OUTPUT 2
ON ON ON

6
 MB3759

OSCILLATION FREQUENCY

f OSC = 1.2
RT C T
RT : k
CT : F
fosc : kHZ

OUTPUT LOGIC TABLE

Input (Output Control) Output State
GND Single-ended or parallel output
VREF Push-pull

7
 MB3759

TYPICAL CHARACTERISTICS

Reference voltage vs.

power supply voltage Reference voltages. temperature

6 10
IO = 1 mA VCC = 15 V
Reference voltage VREF (V)

Reference voltage change

Reference voltage change

5 IO = 1 mA
VREF
0
4 5

VREF (mV)

VREF (mV)
VREF
3 0 10

2 5
20
1

30
0
0 10 20 30 40 25 0 25 50 75 100

Power supply voltage VCC (V) Temperature Ta (C)

Oscillator vs. RT, CT Duty ratio vs. dead time control voltage

1M
500 k VCC =15 V VCC = 15 V Ta = 0C
0
Duty radio TON / T (%)
Oscillator frequency fOSC (HZ)

CT = 1000 pF
200 k
RT = 30 k Ta = +25C
10 Ta = +70C
100 k
CT = 470 pF
50 k
1000 pF 20
20 k
10 k 30
0.01F
5k
0.1F 40
2k
1k 50
2k 5 k 10 k 20 k 100 k 200 k 500 k 0 1 2 3
RT ()
Dead time control voltage VD (V)

(Continued)

8
 MB3759

Open loop voltage amplification vs. frequency

100 Output voltage vs. output current

(feed back terminal)
VCC = 15 V
Open loop voltage amplification AV (dB)

90
VO = 3 V

High - level output voltage VOH (V)

80 0.8 5
VCC = 15 V

Low - level output voltage VOL (V)

Ta = 0C
70 Ta = +25C
Ta = +70C
60 0.6 4
VOH
50 Ta = +70C
40 0.4 3

30
VOL Ta = 0C
20 0.2 Ta = +25C 2

10

0 0 1
10 100 1k 10 k 100 k 1M 0 0.5 1.0 1.5 IOL
0 5 10 15 IOH
Frequency f (Hz)
Output current IOL, IOH (mA)

Collector saturation voltage vs. Emitter saturation voltage vs.

collector output current emitter output current
Collector saturation voltage VSAT ( C ) (V)

Emitter saturation voltage VSAT (E) (V)

1.2 1.8
VCC = 15 V VCC = 15 V

Ta = 0C
1.0 1.6
Ta = 0C Ta = +25C
Ta = +25C

0.8 1.4 Ta = +70C

Ta = +70C

0.6 1.2

0.4 1.0
0 50 100 150 200 0 50 100 150 200

Collector output current IC (mA) Emitter output current IE (mA)

(Continued)

9
 MB3759
(Continued)

Output voltage vs. reference voltage Power supply current vs. power supply voltage

6 10

Power supply current ICC ,ICCQ (mA)

ICC
5
Output voltage VOUT (V)

7.5
4 5V ICCQ

400
3 5
8 VOUT
2
2.5
1

0 0
0 1 2 3 4 5 6 0 10 20 30 40

Reference voltage VREF (V) Power supply voltage VCC (V)

Power dissipation vs. power supply voltage Power dissipation vs. ambient temperature

1000
(IO, IR) 1000
Ta = +25C (mA)
Power dissipation PD (mW)

(200, 10)
(100, 10)
Power dissipation PD (mW)

800 ceramic DIP

(200, 5) 800
(100, 5) plastic DIP
600
600
(100, 0) SOP
400
(0, 0) 400

200 200

0 0
0 10 20 30 40 0 20 40 60 80 100

Power supply voltage VCC (V) Temperature Ta (C)

10
 MB3759

BASIC OPERATION
Switching regulators can achieve a high level of efficiency. This section describes the basic principles of operation
using a chopper regulator as an example.
As shown in the diagram, diode D provides a current path for the current through inductance L when Q is off.
Transistor Q performs switching and is operated at a frequency that provides a stable output. As the switching
element is saturated when Q is on and cutoff when Q is off, the losses in the switching element are much less
than for a series regulator in which the pass transistor is always in the active state.
While Q is conducting, the input voltage VIN is supplied to the LC circuit and when Q is off, the energy stored in
L is supplied to the load via diode D. The LC circuit smooths the input to supply the output voltage.
The output voltage VO is given by the following equation.

Ton Ton
VO = VIN = VIN
Ton + Toff T

Q : ON L

Q : OFF VO RL
VIN D C

Q: Switching element
D: Flywheel diode

As indicated by the equation, variation in the input voltage is compensated for by controlling the duty cycle (Ton/
T). If VIN drops, the control circuit operates to increase the duty cycle so as to keep the output voltage constant.
The current through L flows from the input to the output when Q is on and through D when Q is off. Accordingly,
the average input current IIN is the product of the output current and the duty cycle for Q.
Ton
IIN = IO
T
The theoretical conversion efficiency if the switching loss in Q and loss in D are ignored is as follows.

PO
= 100 (%)
PIN
VO IO
= 100
VIN IIN
VIN IO Ton / T
= 100
VIN IO Ton / T
= 100 (%)

The theoretical conversion efficiency is 100%. In practice, losses occur in the switching element and elsewhere,
and design decisions to minimize these losses include making the switching frequency as low as practical and
setting an optimum ratio of input to output voltage.

11
 MB3759

SWITCHING ELEMENT
1. Selection of the Switching Transistor
It can be said that the success or otherwise of a switching regulator is determined by the choice of switching
transistor. Typically, the following parameters are considered in selecting a transistor.
Withstand voltage
Current
Power
Speed
For the withstand voltage, current, and power, it is necessary to determine that the area of safe operation (ASO)
of the intended transistor covers the intended range for these parameters.
The speed (switching speed: rise time tr, storage time tstg, and fall time tf) is related to the efficiency and also
influences the power.
The figures show the transistor load curve and VCE - IC waveforms for chopper and inverter-type regulators.
The chopper regulator is a relatively easy circuit to deal with as the diode clamps the collector. A peak can be
seen immediately after turn-on. However, this is due to the diode and is explained later.
In an inverter regulator, the diodes on the secondary side act as a clamp. Viewed from the primary side, however,
a leakage inductance is present. This results in an inductive spike which must be taken account of as it is added
to double the VIN voltage.
chopper regulator inverter regulator
IC IN
IN VCE L VO
D1 L VO
Q C
D C

D2

IC IC
on on

off off
VCE VCE
VIN VIN 2 VIN

VCE Ton VCE Ton

2 VIN

VIN

t t

IC Ton IC Ton

t t

12
 MB3759

The figure below shows an example of the ASO characteristics for a forward-biased power transistor (2SC3058A)
suitable for switching.
Check that the ASO characteristics for the transistor you intend to use fully covers the load curve. Next, check
whether the following conditions are satisfied. If so, the transistor can be expected to perform the switching
operation safely.
The intended ON time does not exceed the ON-time specified for the ASO characteristic.
The OFF-time ASO characteristic satisfies the intended operation conditions.
Derating for the junction temperature has been taken into account.
For a switching transistor, the junction temperature is closely related to the switching speed. This is because the
switching speed becomes slower as the temperature increases and this affects the switching losses.

Forward-biased area of safe operation single pulse

2SC3058A (450 V, 30 A)
TC = +25C
IC (Pulse) max. Single pulse
50
IC max.
Pw

20
=
D

50
.C

10
.
Collector current IC (A)

s
10
ms

5
1m
s

0.5

0.2

0.1

0.05
5 10 20 50 100 200 500 1000

Collector - emitter voltage VCE (V)

2. Selecting the Diode

Consideration must be given to the switching speed when selecting the diode. For chopper regulators in particular,
the diode affects the efficiency and noise characteristics and has a big influence on the performance of the
switching regulator.
If the reverse recovery time of the diode is slower than the turn-on time of the transistor, an in-rush current of
more than twice the load current occurs resulting in noise (spikes) and reduced efficiency.
As a rule for diode selection, use a diode with a reverse recovery time trr that is sufficiently faster than the transistor
tr.

13
 MB3759

APPLICATION IN PRACTICAL CIRCUITS

1. Error Amplifier Gain Adjustment
Take care that the bias current does not become large when connecting an external circuit to the FB pin (pin 3)
for adjusting the amplifier gain. As the FB pin is biased to the low level by a sink current, the duty cycle of the
output signal will be affected if the current from the external circuit is greater than the amplifier can sink.
The figure below shows a suitable circuit for adjusting the gain.
It is very important that you avoid having a capacitive load connected to the output stage as this will affect the
response time.

OUT

R1

+
VREF Vo

RIN
R2
RF

2. Synchronized Oscillator Operation

The oscillator can be halted by connecting the CT pin to the GND pin. If supplying the signal externally, halt the
internal oscillator and input to the CT pin.
Using this method, multiple ICs can be used together in synchronized operation. For synchronized operation,
set one IC as the master and connect the other ICs as shown in the diagram.

Master Slave

RT CT VREF RT CT

14
 MB3759

3. Soft Start
A soft start function can be incorporated by using the dead-time control element.

VREF VREF
R2 VR Cd
R1 VD =
R1+R2
DT DT

R2 Rd

Setting the dead-time Incorporating soft start

When the power is turned on, Cd is not yet charged and the DT input is pulled to the VREF pin causing the output
transistor to turn off. Next, the input voltage to the DT pin drops in accordance with the Cd, Rd constant causing
the output pulse width to increase steadily, providing stable control circuit operation.
If you wish to use both dead-time and softstart, combine these in an OR configuration.

VREF
Cd R1
DT

Rd R2

4. Output Current Limiting (Fallback system using a detection resistor inserted on the output side)
(1) Typical example

VREF VO
IO
RS
VO
R3 VO1
R1
VIO
+
D R5

R4 R2
0 IO
GND 0 IL3 IL2 IL1

15
 MB3759

Initial limit current IL1

R4
VO > VREF The condition for VO is:
R3 + R4
As the diode is reverse biased
R1
RS IL1 = VO VIO
R1 + R2
R1 VO VIO
IL1 = Eq. (1) (where R2 >> R1)
R1 + R2 RS RS
VIO is the input offset voltage to the op-amp (-10 mV VIO +10 mV) and this causes the variation in IL. Accordingly,
if for example the variation in IL is to be limited to 10 %, using equation (1) and only considering the variation
in the offset voltage gives the following:
1 R1 VIO
IO = ( VO + VEE ) ( R2 >> R1 )
RS R1 + R2 RS
This indicates a setting of 100 mV or more is required.
Polarity change point IL2
As this is the point where the diode becomes forward biased, it can be calculated by substituting [R4/(R3+R4)
VREF - VD] for VO in equation (where VD is the forward voltage of the diode).

R1 R4 / (R3 + R4) VREF VD VIO

IL2 =
R1 + R2 RS RS

Final limit current IL3

The limit current for VO = 0 when R2 >> R1 is the point where the voltages on either side of RS and on either
side of R5 are biased.

R4R5 VREF R3R5 VD R4R5 VD

RS IL3 = VIO
R3R4 + R3R5 + R4R5
1 1 R4 VIO
IL3 = ( VREF VD ) (2) Eq.
RS 1 + (R 3 // R 4) / R5 R3 + R4 RS

R3//R4 is the resistance formed by R3 and R4 in parallel (R3R4/(R3 + R4)). When R3//R4 << R5, equation (2)
becomes:

1 R4 VIO
IL3 C = ( VREF VD )
RS R3 + R4 RS

In addition to determining the limit current IL3 for VO = 0, R3, R4, R5, and diode D also operate as a starter when
the power is turned on.
Starter circuit
The figure below shows the case when the starter circuit formed by R3, R4, R5, and D is not present. The output
current IO after the operation of the current limiting circuit is:

R1 VO VIO
IO =
R1 + R2 RS RS

When VO = 0 such as when the power is turned on, the output current IO = -VI O / RS and, if the offset voltage VIO
is positive, the output current is limited to being negative and therefore the output voltage does not rise.
Accordingly, if using a fallback system with a detection resistor inserted in the output, always include a starter
circuit, expect in the cases described later.

16
 MB3759

VO
IO
RS
VO
VIO > 0 VIO < 0
R1 VO
+
VIO

R2

GND
IO
0 IL1

(2) Example that does not use a diode

VREF VO
IO R1 R4
RS >
VO R1+R2 R3+R4
R3 VO
R1
VIO R1 R4
+ <
R1+R2 R3+R4
R4

R2
0 IO
GND 0 IL1

The output current IO after current limiting is:

VREF VIO ] (R2 >> R1)

1 R1 R4 R4
IO = [( ) VO +
RS R1 + R2 R3 + R4 R3 + R4

In this case, a current flows into the reference voltage source via R3 and R4 if VO > VREF. To maintain the stability
of the reference voltage, design the circuit such that this does not exceed 200 A.

17
 MB3759

(3) When an external stabilized negative power supply is present

IO VO
RS
VO

R1 VO
VIO
+ VO*

R2

0 IO
VEE 0 I L5 I L1

The output current IO after current limiting is:

1 R1 VIO
IO = (VO + VEE) (R2 >>R1)
RS R1 + R2 RS

If the output is momentarily shorted, VO* goes briefly negative. In this case, set the voltage across R1 to
300 mV or less to ensure that a voltage of less than -0.3 V is not applied to the op-amp input.

18
 MB3759

5. Example Power Supply Voltage Supply Circuit

(1) Supplied via a Zener diode

VIN VIN

R VZ

VCC

C VZ VCC
MB3759
MB3759
VCC = VZ VCC = VIN VZ

(2) Supplied via a three-terminal regulator

Three-terminal
regulator

AC

VCC
MB3759

6. Example Protection Circuit for Output Transistor

Due to its monolithic IC characteristics, applying a negative voltage greater than the diode voltage ( =: 0.5 V) to
the substrate (pin 7) of the MB3759 causes a parasitic effect in the IC which can result in misoperation.
Accordingly, the following measures are required if driving a transformer or similar directly from the output
transistor of the IC.
(1) Protect the output transistor from the parasitic effect by using a Schottky barrier diode.

11

SBD
10

19
 MB3759

(2) Provide a bias at the anode-side of the diode to clamp the low level side of the transistor.

8 11 14

7.5 k
= 0.7 V

0.1 F
1.2 k

(3) Drive the transformer via a buffer transistor.

VCC

20
 MB3759

7. Typical Application
(1)Chopper regulator

AC 100 V
+

15 V
+ +

24 V
2.5 A
1 mH
50

10 k 2 k

16 k 10 k VCC
FB E1
100 k
IN1 C1
0.22 F
+IN1 C2 +
2.2 k 2200 F
VREF E2
10 F 5.6 k
+ IN2 RT
47 k
+IN2 CT
5.1 k
DT OC
GND 20 k

5.1 k 300 2200 pF

5 k

0.1

21
 MB3759

(2) Inverter regulator

AC 100 V
+

15 V
+ +

24 V
2.5 A
+
33 2200 F
100

100 0.1
33

10 k

10 k VCC
FB E1
16 k 100 k
IN1 C1
0.22 F
+IN1 C2
2.2 k
VREF E2
5.6 k
+ 10 F IN2 RT
47 k
+IN2 CT
5.1 k
DT OC
GND 20 k
5.1 k 300 2200 pF
REF
5 k

22
 MB3759

ORDERING INFORMATION
Part number Package Remarks
16-pin plastic DIP
MB3759P
(DIP-16P-M04)
16-pin ceramic DIP
MB3759C
(DIP-16C-C01)
16-pin plastic SOP
MB3759PF
(FPT-16P-M06)

23
 MB3759

PACKAGE DIMENSIONS
16-pin plastic DIP
(DIP-16P-M04)
+0.20
19.55 0.30
+.008
.770 .012

INDEX-1
INDEX-2 6.200.25
(.244.010)

4.36(.172)MAX 0.51(.020)MIN

0.250.05
(.010.002)
3.00(.118)MIN 0.460.08
(.018.003)

+0.30 +0.30 15MAX

0.99 0 1.52 0 7.62(.300)
+.012 +.012
.039 0 .060 0 TYP
1.27(.050) 2.54(.100)
MAX TYP

C 1994 FUJITSU LIMITED D16033S-2C-3

Dimensions in mm (inches)
(Continued)

24
 MB3759

(Continued)
16-pin ceramic DIP
(DIP-16C-C01)

+0.71
19.30 0.15
+.028
.760 .006

R0.64(.025) 6.30 0.10

+0.30

REF +.012
.248 .004

+0.36
7.90 0.15
+.014
.311 .006

5.08(.200)MAX 0.810.30
+0.10
(.032.012) 0.25 0.05
+.004
.010 .002
3.400.36
(.134.014)

+0.05
1.52 0.10 0.81(.032)
+.002
.060 .004 TYP 0 15
7.62(.300)
+0.13
2.540.25 0.46 0.08 TYP
(.100.010) +.005
.018 .003
1.27(.050) 17.78(.700)REF
MAX

C 1994 FUJITSU LIMITED D16011SC-2-3

Dimensions in mm (inches)
(Continued)

25
 MB3759

(Continued)
16-pin plastic SOP
(FPT-16P-M06)

2.25(.089)MAX
+0.25 +.010 (Mounting height)
10.15 0.20 .400 .008
0.05(.002)MIN
(STAND OFF)

+0.40
INDEX 5.300.30 7.800.40 6.80 0.20
(.209.012) (.307.016) +.016
.268 .008

"B"

+0.05
1.27(.050) 0.450.10 0.15 0.02 0.500.20
0.13(.005) M
+.002
TYP (.018.004) .006 .001 (.020.008)

Details of "A" part Details of "B" part

0.40(.016) 0.15(.006)

0.20(.008)
"A"
0.20(.008)
0.10(.004)
8.89(.350)REF 0.18(.007)MAX 0.18(.007)MAX
0.68(.027)MAX 0.68(.027)MAX

C 2000 FUJITSU LIMITED F16015S-2C-5

Dimensions in mm (inches)

26
MB3759

FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED All Rights Reserved.
Corporate Global Business Support Division
Electronic Devices The contents of this document are subject to change without notice.
KAWASAKI PLANT, 4-1-1, Kamikodanaka, Customers are advised to consult with FUJITSU sales
Nakahara-ku, Kawasaki-shi, representatives before ordering.
Kanagawa 211-8588, Japan
Tel: +81-44-754-3763 The information and circuit diagrams in this document are
Fax: +81-44-754-3329 presented as examples of semiconductor device applications, and
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