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    SKIIP11NAB06

    Uploaded by

    Cucu Catalin
    The document provides data sheets for SEMIKRON integrated intelligent power modules. It includes maximum ratings, characteristics, and graphs of electrical parameters for IGBTs, diodes, and temperature sensors. The document also specifies mechanical dimensions and mounting details.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    SKIIP11NAB06

    Uploaded by

    Cucu Catalin
    114 views4 pages
    The document provides data sheets for SEMIKRON integrated intelligent power modules. It includes maximum ratings, characteristics, and graphs of electrical parameters for IGBTs, diodes, and temperature sensors. The document also specifies mechanical dimensions and mounting details.

    Original Description:

    SEMIKRON integrated intelligent Power

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    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    The document provides data sheets for SEMIKRON integrated intelligent power modules. It includes maximum ratings, characteristics, and graphs of electrical parameters for IGBTs, diodes, and temperature sensors. The document also specifies mechanical dimensions and mounting details.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    114 views4 pages

    SKIIP11NAB06

    Uploaded by

    Cucu Catalin
    The document provides data sheets for SEMIKRON integrated intelligent power modules. It includes maximum ratings, characteristics, and graphs of electrical parameters for IGBTs, diodes, and temperature sensors. The document also specifies mechanical dimensions and mounting details.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SKiiP 11 NAB 06 MiniSKiiP 1

    SEMIKRON integrated
    Absolute Maximum Ratings intelligent Power
    Symbol Conditions 1) Values Units SKiiP 11 NAB 06
    Inverter 3-phase bridge rectifier +
    VCES 600 V braking chopper +
    VGES 20 V 3-phase bridge inverter
    IC Theatsink = 25 / 80 C 17 / 12 A
    ICM tp < 1 ms; Theatsink = 25 / 80 C 34 / 24 A
    IF = IC Theatsink = 25 / 80 C 20 / 15 A
    IFM = ICM tp < 1 ms; Theatsink = 25 / 80 C 40 / 30 A
    Case M1
    Bridge Rectifier
    VRRM 800 V
    ID Theatsink = 80 C 12 A
    IFSM tp = 10 ms; sin. 180 , Tj = 25 C 370 A
    I2t tp = 10 ms; sin. 180 , Tj = 25 C 680 A2s
    Tj 40 . . . + 150 C
    Tstg 40 . . . + 125 C
    Visol AC, 1 min. 2500 V

    Characteristics
    Symbol Conditions 1) min. typ. max. Units
    IGBT - Inverter & Chopper
    VCEsat IC = 10 A Tj = 25 (125) C 2,1(2,2) 2,7(2,8) V
    td(on) VCC = 300 V; VGE = 15 V 40 80 ns
    tr IC = 10 A; Tj = 125 C 60 120 ns
    td(off) Rgon = Rgoff = 100 250 400 ns
    tf inductive load 500 750 ns
    Eon + Eoff 1,2 mJ
    Cies VCE = 25 V; VGE = 0 V, 1 MHz 0,57 nF
    UL recognized file no. E63532
    Rthjh per IGBT 2,3 K/W
    Diode 2) - Inverter & Chopper specification of temperature
    VF = VEC IF = 10 A Tj = 25 (125) C 1,45(1,4) 1,7(1,7) V sensor see part A
    VTO Tj = 125 C 0,85 0,9 V common characteristics see
    rT Tj = 125 C 55 80 m page B163
    IRRM IF = 10 A, VR = 300 V 13 A
    Qrr diF/dt = 200 A/s 1,5 C
    Eoff VGE = 0 V, Tj = 125 C 0,45 mJ Options
    Rthjh per diode 2,7 K/W also available with single phase
    rectifier (called 11 NEB 06)
    Diode - Rectifier also available with faster IGBTs
    VF IF = 25 A, Tj = 25 C 1,2 V (type ... 063), data sheet on
    Rthjh per diode 2,6 K/W request
    Temperature Sensor
    RTS T = 25 / 100 C 1000 / 1670 1) Theatsink = 25 C, unless
    Mechanical Data otherwise specified
    2)
    M1 case to heatsink, SI Units 2 2,5 Nm CAL = Controlled Axial Lifetime
    Case mechanical outline see page M1 Technology (soft and fast
    B 16 6 recovery)

    by SEMIKRON 0898 B 16 21
    Fig. 1 Typ. output characteristic, tp = 80 s; 25 C Fig. 2 Typ. output characteristic, tp = 80 s; 125 C

    Tj = 125 C Tj = 125 C
    VCE = 300 V VCE = 300 V
    VGE = 15 V VGE = 15 V
    RG = 100 IC = 10 A

    Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)

    ICpuls = 10 A VGE = 0 V
    f = 1 MHz

    Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE

    B 16 22 0698 by SEMIKRON
    2. Common characteristics of MiniSKiiP
    MiniSKiiP 600 V
    ICop / IC Mini0607
    1.2
    Tj = 150 C
    VGE = 15 V
    1.0

    0.8

    0.6

    0.4

    0.2

    0
    0 25 50 75 100 125 150
    Th [C]
    Fig. 7 Rated current of the IGBT ICop / IC = f (Th)

    Tj = 150 C Tj = 150 C
    VGE = 15 V VGE = 15 V
    tsc = 10 s
    Lext < 25 nH

    Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT

    Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode

    by SEMIKRON 0698 B 16 3
    MiniSKiiP 1

    SKiiP 10 NAB 06 Circuit


    SKiiP 11 NAB 06 Case M1
    Layout and connections for the
    customers printed circuit board

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