SKIIP83AC12
SKIIP83AC12
SKIIP83AC12
SEMIKRON integrated
Absolute Maximum Ratings intelligent Power
Symbol Conditions 1) Values Units SKiiP 83 AC 12
VCES 1200 V SKiiP 83 AC 12 I 3)
VGES ± 20 V SKiiP 83 AC 12 IS 4)
IC Theatsink = 25 / 80 °C 125 / 85 A
ICM tp < 1 ms; Theatsink = 25 / 80 °C 250 / 170 A IGBT
Tj – 40 . . . + 150 °C 3-phase bridge inverter
Tstg – 40 . . . + 125 °C
Visol AC, 1 min. 2500 V
Case M8
Inverse Diode
IF = –IC Theatsink = 25 / 80 °C 80 / 53 A
IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C 160 / 106 A
IFSM tp = 10 ms; sin., Tj = 25 °C 720 A
I2t tp = 10 ms; sin., Tj = 25 °C 2600 A2 s
Characteristics
Symbol Conditions 1) min. typ. max. Units
IGBT - Inverter
VCEsat IC = 100 A Tj = 25 (125) °C – 2,5(3,1) 3,0(3,7) V
td(on) VCC = 600 V; VGE = ± 15 V – 50 100 ns
tr IC = 100 A; Tj = 125 °C – 55 110 ns
td(off) Rgon = Rgoff = 11 Ω – 400 600 ns
tf inductive load – 70 100 ns ~
Eon + Eoff – 27 – mJ ~
Cies VCE = 25 V; VGE = 0 V, 1 MHz – 6,6 – nF
~
Rthjh per IGBT – – 0,25 K/W
Diode 2) - Inverter
VF = VEC IF = 75 A Tj = 25 (125) °C – 2,0(1,8) 2,5(2.3) V
UL recognized file no. E63532
VTO Tj = 125 °C – 1,0 1,2 V
rT Tj = 125 °C – 11 15 mΩ • more detailed characteristics of
IRRM IF = 75 A, VR = – 600 V – 45 – A current sensors and temperature
Qrr diF/dt = – 800 A/µs – 11 – µC sensor please refer to part A
Eoff VGE = 0 V, Tj = 125 °C – 3,0 – mJ • common characteristics see
Rthjh per diode – – 0,8 K/W page B 16 – 4
Current sensor for three phase output ac current (SKiiP 83 AC 12 I)
Ip RMS Continuous current,
T = 100 °C, Vsuppl = ± 15 V – 50 – A Options
Ipmax RMS t≤ 2s – – 80 A • also available with powerful free-
wheeling diodes. Data sheet on
Ip peak t ≤ 10 µs – 1000 – A
request
Rout terminating resistance – 50 – Ω
Is RMS rated sensor current
at Ip = 50 ARMS 25 mA 1) Theatsink = 25 °C, unless
Ip : Is transfer ratio 1 : 2000 otherwise specified
Offset error IP = 0 A, T = – 40 ... 100 °C – ± 0,2 – mA 2)
CAL = Controlled Axial Lifetime
Linearity – 0,1 – % Technology (soft and fast
delay time IP = 10 % – 80 % – <1 – µs recovery)
90 % – 20 % – <1 – µs 3)
With integrated closed loop
Bandwidth 0 – 100 (– 3dB) kHz current sensors
4) Extended current range, data
Temperature Sensor
sheet on request
RTS T = 25 / 100 °C 1000 / 1670 Ω
Mechanical Data
M1 case to heatsink, SI Units 2,5 – 3,5 Nm
Case mechanical outline see pages M8
B 16 – 11 and B 16 – 12
© by SEMIKRON 0698 B 16 – 67
17V 17V
160 160
0 15V 15V
13V 13V
120 11V 120
11V
9V 9V
80 7V 80 7V
40 40
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE [V] VCE [V]
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
Tj = 125 °C Tj = 125 °C
VCE = 600 V VCE = 600 V
VGE = ± 15 V VGE = ± 15 V
RG = 11 Ω IC = 100 A
Fig. 3 Turn-on /-off energy = f (IC) Fig. 4 Turn-on /-off energy = f (RG)
VGE [V] 83AC1205
20 ICpuls = 100 A VGE = 0 V
18 f = 1 MHz
600V 800V
16
14
12
10
0
0 200 400 600 800
QG [nC]
Fig. 5 Typ. gate charge characteristic Fig. 6 Typ. capacitances vs. V CE
B 16 – 68 0698 © by SEMIKRON
MiniSKiiP 1200 V
ICop / IC
Mini1207
1.2
Tj = 150 °C
VGE = ≥ 15 V
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC Mini1209 ICsc/ICN Mini1210
2,5
Tj = ≤ 150 °C 12
Tj = ≤ 150 °C
VGE = ± 15 V VGE = ± 15 V
10
tsc = ≤ 10 µs
2 Lext < 25 nH
8
1,5 Note:
*Allowed numbers of
short circuit:<1000
6
*Time between short
circuit:>1s
1
4
0,5
2
0 0
0 500 1000 1500 0 500 1000 1500
VCE [V] VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic Fig. 12 Forward characteristic of the input bridge diode
B 16 – 4 0698 © by SEMIKRON
MiniSKiiP 8
Inverter part