Tranzistor BSP75
Tranzistor BSP75
Tranzistor BSP75
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded protection functions.
V bb
LOAD M
Drain
2
Overvoltage
protection
dv/dt
1
IN limitation
Short circuit
protection
Over-
ESD temperature Short circuit
Current
protection protection
limitation
Source
3
4
HITFET
1)
RI=internal resistance of the load dump test pulse generator LD200
2)
VLoadDump is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839.
3)
Device on epoxy pcb 40mm x 40 mm x 1.5mm with 6cm2 copper area for pin 4 connection
Semiconductor Group Page 2 1998-11-25
HITFET® BSP 75
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, unless otherwise specified min typ max
Static Characteristics
Drain source clamp voltage VDS(AZ) 55 -- 70 V
ID = 10 mA Tj =-40...+150°C:
Off state drain current IDSS -- -- 5 µA
VIN = 0 V, VDS = 32 V Tj =-40...+150°C:
Input threshold voltage ID = 10 mA VIN(th) 2 2.5 3 V
Input current normal operation, ID<ID(lim): IIN(1) -- 100 200 µA
VIN = 5 V current limitation mode, ID=ID(lim): IIN(2) -- 200 300
after thermal shutdown, ID=0 A: IIN(3) 1000 1500 2000
On-state resistance
ID = 0.7 A, VIN = 5 V Tj=25°C: RDS(on) -- 550 675 mΩ
Tj=150°C: -- 850 1350
On-state resistance
ID = 0.7 A, VIN = 10 V Tj=25°C: RDS(on) -- 475 550 mΩ
Tj=150°C: -- 750 1000
Nominal load current ID(Nom) 0.7 -- -- A
VBB = 12 V, VDS = 0.5 V, TS = 85°C
Tj < 150°C
Current limit ID(lim) 1 1.5 1.9 A
VIN = 10 V, VDS = 12 V
Dynamic characteristics
Turn-on time VIN to 90% ID: ton -- 10 20 µs
RL = 22 Ω, VIN= 0 to 10 V, Vbb= 12 V
Turn-off time VIN to 10% I D: toff -- 10 20 µs
RL = 22 Ω, VIN= 10 to 0 V, Vbb= 12 V
Slew rate on 70 to 50% Vbb: -dVDS/dt on -- 4 10 V/µs
RL = 22 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off 50 to 70% Vbb: dVDS/dt off -- 4 10 V/µs
RL = 22 Ω, VIN= 10 to 0 V, Vbb= 12 V
Protection Functions
Thermal overload trip temperature Tjt 150 165 -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Unclamped single pulse inductive energy
ID(ISO)=0.7 A, Vbb=32 V Tj=25 °C EAS 550 -- -- mJ
Tj=150 °C 200 -- --
Inverse Diode
Continuous source drain voltage VSD -- 1 -- V
VIN = 0 V, -ID = 2*0.7 A
Circuit Description
The BSP 75 is a monolithic power switch in Smart Power Technology (SPT) with a logic level
input, an open drain DMOS output stage and integrated protection functions. It is designed
for all kind of resistive and inductive loads (relays, solenoid) in automotive and industrial ap-
plications.
Protection functions
• Overvoltage protection: An internal clamp limits the output voltage at V DS(AZ) (about
63 V) when inductive loads are switched off.
• Current limitation: By means of an internal current measurement the drain current is lim-
ited at ID(lim) (1.4 - 1.5 A typ.). If the current limitation is active the device operates in the
linear region, so power dissipation may exceed the capability of the heatsink. This opera-
tion leads to an increasing junction temperature until the overtemperature threshold is
reached.
• Overtemperature and short circuit protection: This protection is based on sensing the
chip temperature. The location of the sensor ensures a fast and accurate junction tem-
perature detection. Overtemperature shutdown occurs at minimum 150 °C. A hysteresis of
typ. 10 K enables an automatical restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump protected
(see Maximum Ratings).
Terms
V D
Z
RL
S
I IN 2
D
IN
1 ID VDS Vbb HITFET
HITFET
3
S
VIN VIN
IN VDS VDS(AZ)
ESD-ZD I
VBB
Source
t
ESD zener diodes are not designed for DC
current.
Turn on into overload or short circuit
VIN
ID
ID(lim)
t
Shut down by overtemperature and restart by
cooling. Current internally limited at ID(lim).
1.8 900
1.6 800
1.4 700
1.2 600 m a x.
1 500
0.8 typ .
400
0.6 300
0.4 200
0.2 100
0 0
0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TC [°C] Tj [°C]
On-state resistance Typ. input threshold voltage
RON = f (Tj); ID= 0.7 A; VIN= 5 V VIN(th) = f (Tj); ID= 10 mA; VDS= 12 V
1200
2.5
1000
2
m a x.
800
1.5
600
typ .
1
400
0.5
200
0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj [°C] Tj [°C]
1.4
1500
1.3
1000
1.2
500
1.1
0 1
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
0.05
1
0.01
0.4 1E-1
0.2
0
0 1E-2
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
0 2 4 6 8 10
Application examples:
RSt
IN D
∆V
VIN
thermal shutdown
Pin 4
Edition 7.97
© Siemens AG 1997
All Rights Reserved.
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