ATS625 Datasheet
ATS625 Datasheet
ATS625 Datasheet
Discontinued Product
This device is no longer in production. The device should not be
purchased for new design applications. Samples are no longer available.
Recommended Substitutions:
For existing customer transition, and for new customers or new appli-
cations, refer to the ATS627LSGTN-T.
Allegro MicroSystems, Inc. reserves the right to make, from time to time, revisions to the anticipated product life cycle plan
for a product to accommodate changes in production capabilities, alternative product availabilities, or market demand. The
information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, Inc. assumes no respon-
sibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use.
ATS625LSG
True Zero-Speed Low-Jitter
High Accuracy Gear Tooth Sensor IC
Features and Benefits Description
▪ Highly repeatable over operating temperature range The ATS625 true zero-speed gear tooth sensor IC is an optimized
▪ Tight timing accuracy over operating temperature range Hall IC and rare earth pellet configuration that provides a
▪ True zero-speed operation manufacturer-friendly solution for digital gear tooth sensing
▪ Air-gap–independent switchpoints applications. The over-molded package holds together a
▪ Vibration immunity samarium cobalt pellet, a pole piece concentrator, and a true
▪ Large operating air gaps zero-speed Hall IC that has been optimized to the magnetic
▪ Defined power-on state circuit. This small package can be easily assembled and used
▪ Wide operating voltage range in conjunction with gears of various shapes and sizes.
▪ Digital output representing target profile
The device incorporates a dual-element Hall IC that switches
▪ Single-chip sensing IC for high reliability
in response to differential magnetic signals created by a ferrous
target. Digital processing of the analog signal provides zero-
Continued on the next page… speed performance independent of air gap as well as dynamic
adaptation of device performance to the typical operating
conditions found in automotive applications (reduced vibration
Package: 4 pin SIP (suffix SG) sensitivity). High-resolution peak detecting DACs are used to
set the adaptive switching thresholds of the device. Switchpoint
hysteresis reduces the negative effects of any anomalies
in the magnetic signal associated with the targets used in
many automotive applications. This device is optimized for
crank applications that utilize targets that possess signature
regions.
The ATS625 is provided in a 4-pin SIP. It is lead (Pb) free,
with 100% matte tin plated leadframe.
Not to scale
VCC
Voltage
Regulator
Threshold
Automatic Comparator
PPeak
Gain PDAC
Control PThresh
VPROC
Hall Reference Threshold
0.1 F
Amp Generator Logic
CBYPASS
NThresh
NPeak
NDAC
VOUT
Current Output
Limit Transistor
GND
AUX
(Recommended)
ATS625LSG-DS, Rev. 5
ATS625LSG
True Zero-Speed Low-Jitter High Accuracy
Gear Tooth Sensor IC
Selection Guide
Part Number Packing1
ATS625LSGTN-T2 Tape and Reel 13-in. 800 pcs./reel
1Contact Allegro for additional packing options.
2Some restrictions may apply to certain types of sales. Contact Allegro for details.
1 2 3 4
AUX For Allegro use only 3
GND Ground 4
Operating Characteristics Valid at TA = –40°C to 150°C, TJ ≤ TJ(max), over full range of AG, unless otherwise noted; typical
operating parameters: VCC = 12 V and TA = 25°C
Characteristic Symbol Test Conditions Min. Typ. Max. Units
ELECTRICAL CHARACTERISTICS
Supply Voltage VCC Operating; TJ < TJmax 4.0 – 24 V
Undervoltage Lockout VCCUV – – < VCC(min) V
Reverse Supply Current IRCC VCC = –18 V – – –10 mA
Supply Zener Clamp Voltage1 VZ ICC = 17 mA 28 – – V
Operating Characteristics, continued Valid at TA = –40°C to 150°C, TJ ≤ TJ(max), over full range of AG, unless otherwise noted;
typical operating parameters: VCC = 12 V and TA = 25°C
Characteristic Symbol Test Conditions Min. Typ. Max. Units
IG
ht
S
t,t
Length of signature tooth, with
Signature Region Circu-
tSIG respect to branded face; mea- 15 mm
lar Tooth Length
sured at Do
Length of valley, with respect to
Circular Valley Length tv 3 mm
branded face; measured at Do
Tooth Whole Depth ht 3 mm Air Gap
Signature Region
Pin 4
Pin 1
Branded Face
of Package
Reference Target
60+2
For the generation of adequate magnetic field levels, the fol- Although these parameters apply to targets of traditional
lowing recommendations should be followed in the design and geometry (radially oriented teeth with radial sensing, shown in
specification of targets: figure 1), they also can be applied in applications using stamped
• 2 mm < tooth width, t < 4 mm targets (an aperture or rim gap punched out of the target mate-
• Valley width, tv > 2 mm rial) and axial sensing. For stamped geometries with axial sens-
ing, the valley depth, ht, is intrinsically infinite, so the criteria for
• Valley depth, ht > 2 mm
tooth width, t, valley width, tv, tooth material thickness, F, and
• Tooth thickness, F ≥ 3 mm material specification need only be considered for reference. For
• Target material must be low carbon steel example, F can now be < 3 mm.
14 14
13 13 Vcc = 26.5V
12 12 Vcc = 20V
TA (°C)
11 VCC (V)
Current (mA)
Vcc = 12V
Current (mA)
11
-40 26.5
10 10 Vcc = 4V
0 20.0
9 25 9 12.0
8 85 4.0
8
150
7 7
6 6
5 5
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175
14 14
13 13 Vcc = 24V
12 12 Vcc = 20V
TA (°C) 11 Vcc = 12V VCC (V)
Current (mA)
11
Current (mA)
-40 24.0
10 10 Vcc = 4V
0 20.0
9 25 9 12.0
85 8 4.0
8
150
7 7
6 6
5 5
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 175
10 400
8 350
6
300
4 IOUT (mA)
Voltage (mV)
VOUT (V)
250 25
Current (uA)
2 26.5
20
0 20.0 200
15
-2 12.0
150 10
4.0
-4 5
100
-6
50
-8
-10 0
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Signature Tooth Rising Edge Signature Tooth Rising Edge
0.5 mm Air Gap 0.5 mm Air Gap
1.5 1.5
1.0 1.0
Edge Position (°)
S (rpm)
-1.5 -1.5
500 1000 1500 2000 2500 -50 0 50 100 150 200
0
Target Speed, S (rpm) Temperature, TA (°C)
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Signature Tooth Falling Edge Signature Tooth Falling Edge
0.5 mm Air Gap 0.5 mm Air Gap
1.5 1.5
1.0 1.0
S (rpm)
Edge Position (°)
Edge Position (°)
TA (°C) 50
0.5 0.5
–40 100
0 0.0 500
0.0
25 1000
85 -0.5 1500
-0.5
150 2000
-1.0 -1.0
-1.5
-1.5
0 500 1000 1500 2000 2500 -50 0 50 100 150 200
Target Speed, S (rpm) Temperature, TA (°C)
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Rising Edge Following Signature Tooth Rising Edge Following Signature Tooth
0.5 mm Air Gap 0.5 mm Air Gap
1.5 1.5
1.0 1.0
Edge Position (°)
TA (°C) S (rpm)
0.5 –40 0.5 50
0 100
0.0 25 0.0 500
85 1000
-0.5 -0.5 1500
150
2000
-1.0 -1.0
-1.5 -1.5
0 500 1000 1500 2000 2500 -50 0 50 100 150 200
Target Speed, S (rpm) Temperature, TA (°C)
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Signature Tooth Rising Edge Signature Tooth Rising Edge
2.5 mm Air Gap 2.5 mm Air Gap
1.5 1.5
1.0 1.0
Edge Position (°)
S (rpm)
-1.5 -1.5
500 1000 1500 2000 2500 -50 0 50 100 150 200
0
Target Speed, S (rpm) Temperature, TA (°C)
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Signature Tooth Falling Edge Signature Tooth Falling Edge
2.5 mm Air Gap 2.5 mm Air Gap
1.5 1.5
1.0 1.0
S (rpm)
Edge Position (°)
Edge Position (°)
TA (°C) 50
0.5 0.5
–40 100
0 0.0 500
0.0
25 1000
85 -0.5 1500
-0.5
150 2000
-1.0 -1.0
-1.5
-1.5
0 500 1000 1500 2000 2500 -50 0 50 100 150 200
Target Speed, S (rpm) Temperature, TA (°C)
Relative Timing Accuracy Versus Speed Relative Timing Accuracy Versus Ambient Temperature
Rising Edge Following Signature Tooth Rising Edge Following Signature Tooth
2.5 mm Air Gap 2.5 mm Air Gap
1.5 1.5
1.0 1.0
Edge Position (°)
TA (°C) S (rpm)
0.5 –40 0.5 50
0 100
0.0 25 0.0 500
85 1000
-0.5 -0.5 1500
150
2000
-1.0 -1.0
-1.5 -1.5
0 500 1000 1500 2000 2500 -50 0 50 100 150 200
Target Speed, S (rpm) Temperature, TA (°C)
TA = –40, 0, 25, 85, 150 (°C) TA = –40, 0, 25, 85, 150 (°C)
S = 50, 100, 500, 1000, 1500, 2000 (rpm) S = 50, 100, 500, 1000, 1500, 2000 (rpm)
2.0 2.0
1.0 1.0
0.5 0.5
0.0
0.0
-0.5
-0.5
-1.0
-1.0
-1.5
-1.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Air Gap (mm) Air Gap (mm)
1.0
0.5
0.0
-0.5
-1.0
-1.5
0 0.5 1.0 1.5 2.0 2.5 3.0
Air Gap (mm)
0.25
TA (°C)
0.20
Repeatabilty (°)
–40
25
0.15
150
0.10
0.05
0
0 1.0 2.0 3.0 4.0
Device Description
Package Description magnetic gradient created by the passing of a ferrous object. This
The ATS625LSG is a combined Hall IC and rare-earth pellet is illustrated in figures 2 and 3. The differential output of the
configuration that is fully optimized to provide digital detec- two elements is converted to a digital signal that is processed to
tion of gear tooth edges. This device is integrally molded into a provide the digital output.
plastic body that has been optimized for size, ease of assembly,
and manufacturability. High operating temperature materials are Switching Description
used in all aspects of construction.
After proper power is applied to the component, the chip is then
Hall Technology capable of providing digital information that is representative of
The ATS625 contains a single-chip differential Hall effect sen- the profile of a rotating gear, as illustrated in figure 4. No addi-
sor IC, a 4-pin leadframe, a samarium cobalt pellet, and a flat tional optimization is needed and minimal processing circuitry is
ferrous pole piece. The Hall IC consists of two Hall elements required. This ease of use reduces design time and incremental
spaced 2.2 mm apart, and each independently measures the assembly costs for most applications.
Target (Gear)
Element Pitch
Hall Element 2 Hall Element 1 Rotating Target Branded Face
of Package
Hall IC
Pole Piece
South Pole (Concentrator)
Dual-Element
Hall Effect Device Back-biasing
1 4
Rare Earth Pellet
North Pole Plastic
(Pin n >1 Side) (Pin 1 Side)
Target
Mechanical Profile
Signature Tooth
B+
Target
Magnetic Profile BIN
IC Output
Switch State On Off On Off On Off On Off On Off On Off On Off On Off
IC Output V+
Electrical Profile VOUT
Target Motion from
Pin 1 to Pin 4
IC Output V+
Electrical Profile VOUT
Target Motion from
Pin 4 to Pin 1
Figure 4. The magnetic profile reflects the geometry of the target, allowing the device to present an accurate digital output response.
Undervoltage Lockout figure 5 is the basic configuration required for proper device
When the supply voltage falls below the undervoltage lockout operation. Contact Allegro field applications engineering for
level, VCCUV, the device switches to the OFF state. The device information on the circuitry required for compliance to various
remains in that state until the voltage level is restored to to the EMC specifications.
VCC operating range. Changes in the target magnetic profile
Internal Electronics
have no effect until voltage is restored. This prevents false sig-
The ATS625LSG contains a self-calibrating Hall effect IC
nals caused by undervoltage conditions from propagating to the
that possesses two Hall elements, a temperature compensated
output of the IC.
amplifier and offset cancellation circuitry. The IC also contains
Power Supply Protection a voltage regulator that provides supply noise rejection over the
The device contains an on-chip regulator and can operate over operating voltage range. The Hall transducers and the electron-
a wide range of supply voltage levels. For applications using an ics are integrated on the same silicon substrate by a proprietary
unregulated power supply, transient protection must be added BiCMOS process. Changes in temperature do not greatly affect
externally. For applications using a regulated supply line, EMI this device due to the stable amplifier design and the offset rejec-
and RFI protection may still be required. The circuit shown in tion circuitry.
VS
1
VCC RPU
CBYPASS ATS625
0.1 μF 2 Output
3
AUX VOUT
GND
4
Package Package
Target Motion Relative to Package
Pin 4 Side Pin 1 Side
IC Output, VOUT
(Start-up over valley)
IC start-up location
Package Package
Target Motion Relative to Package
Pin 1 Side Pin 4 Side
IC Output, VOUT
(B) Target relative movement (Start-up over valley)
opposite that shown in figure 3.
Output signal is low over the tooth.
(Start-up over rising edge)
IC start-up location
Figure 6. Start-up Position And Relative Motion Effects on First Device Output Switching. Panel A shows the effects when the
target is moving from pin 1 toward pin 4 of the device; VOUT goes high at the approach of a tooth. When the target is moving
in the opposite direction, as in panel B, the polarity of the device output inverts; VOUT goes low at the approach of a tooth.
AGC (Automatic Gain Control) adjusted, keeping the internal signal amplitude constant over the
The AGC feature is implemented by a unique patented self- air gap range of the device, AG. This feature ensures that opera-
calibrating circuitry. After each power-on, the device measures tional characteristics are isolated from the effects of changes in
the peak-to-peak magnetic signal. The gain of the circuit is then AG. The effect of AGC is shown in figure 7.
Differential Electrical Signal versus Target Rotation Differential Electrical Signal versus Target Rotation
at Various Air Gaps, Without AGC at Various Air Gaps, With AGC
1000 1000
AG:
0.25 mm
800 800
AG: 0.50 mm
0.25 mm
Differential Signal, VPROC (mV)
1.00 mm
600
Differential Signal, VPROC (mV)
600 1.50 mm
0.50 mm
1.00 mm 2.00 mm
400 400
1.50 mm
2.00 mm
200 200
0 0
-200 -200
-400 -400
-600 -600
-800 -800
-1000 -1000
0 3 6 9 12 15 18 21 24 0 3 6 9 12 15 18 21 24
Figure 7. Effect of AGC. The left panel shows the process signal, VPROC, without AGC. The right panel shows the effect with
AGC. The result is a normalized VPROC, which allows optimal performance by the rest of the circuits that reference this signal.
Offset Adjustment processed signal, VPROC, and use it as a reference for the Thresh-
In addition to normalizing performance over varying AG, the old Comparator subcircuit, which controls device switching. If
gain control circuitry also reduces the effect of chip, magnet, induced offsets bias the absolute signal up or down, AGC and
and installation offsets. This is accomplished using two DACs the dynamic DAC behavior work to normalize and reduce the
(D to A converters) that capture the peaks and valleys of the impact of the offset on device performance.
Switchpoints ing from the previous two edges. Because variations are tracked
Switchpoints in the ATS625 are a percentage of the amplitude of in real time, the device has high immunity to target run-out and
the signal, VPROC, after normalization with AGC. In operation, retains excellent accuracy and functionality in the presence of
the actual switching levels are determined dynamically. Two both run-out and transient mechanical events. Figure 9 shows
DACs track the peaks of VPROC (see the Update subsection). how the device uses historical data to provide the switching
The switching thresholds are established at 40% and 60% of the threshold for a given edge.
values held in the two DACs. The proximity of the thresholds
near the 50% level ensures the most accurate and consistent
switching, because it is where the slope of VPROC is steepest and
least affected by air gap variation. Dynamic BOP Threshold Determination
The low hysteresis, 20%, provides high performance over vari-
ous air gaps and immunity to false switching on noise, vibration, V+
VPROC (%)
switching threshold levels. Because the thresholds are established 60
BOP
dynamically as a percentage of the peak-to-peak signal, the effect
of a baseline shift is minimized. As a result, the effects of offsets
induced by tilted or off-center installation are minimized.
0
Update
The ATS625 incorporates an algorithm that continuously moni-
Device
On Off
The switchpoint for each edge is determined by the signal result-
(A)
V+ V+
100 100
VPROC (%)
VPROC (%)
60 BOP
BRP
40 BRP 40
0 0
Device
Device
State
State
(B)
Figure 8. Switchpoint Relationship to Thresholds.The device switches Figure 9. Switchpoint Determination. The two previous VPROC peaks are
when VPROC passes a threshold level, BOP or BRP , while changing in the used to determine the next threshold level: panel A, operate point, and
corresponding direction: increasing for a BOP switchpoint, and decreasing panel B, release point.
for a BRP switchpoint.
Magnetic Profile A single curve can be derived from this map data, and be used to
describe the peak-to-peak magnetic field strength versus the size
In order to establish the proper operating specification for a par- of the air gap, AG. This allows determination of the minimum
ticular IC and target system, a systematic evaluation of the mag- amount of magnetic flux density that guarantees operation of
netic circuit should be performed. The first step is the generation the IC, BIN, so the system designer can determine the maximum
of a magnetic map of the target. By using a calibrated device, a allowable AG for the IC and target system. Referring to fig-
magnetic profile of the system is made. Figure 10 is a magnetic ure 11, a BIN of 60 G corresponds to a maximum AG of approxi-
map of the 60+2 reference target. mately 2.5 mm.
250
200
AG
Differential Flux Density, BIN (G)
150 (mm)
100 0.75
50
1.00
0
1.50
-50
-100 2.00
-150 2.50
-200
3.00
-250
-300
-350
-400
0 30 60 90 120 150 180
Target Rotation (°)
Air Gap Versus Magnetic Field, Reference Target 60+2 with ATS625
800
Peak-Peak Differential Flux Density, BIN (G)
700
600
500
400
300
200
100
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
AG (mm)
Figure 10. Magnetic Data for the Reference Target 60+2 with ATS625. In the top panel, the Signature Region appears in the center of the plot.
Accuracy occur within a single revolution of the target are effectively nul-
While the update algorithm will allow the device to adapt to lified. Because the trigger event occurs a very short time before
typical air gap variations, major changes in air gap can adversely the measured event, little opportunity is given for measurement
affect switching performance. When characterizing IC perfor- system jitter to impact the time-based measurements.
mance over a significant air gap range, be sure to re-power the
After the data is taken on the oscilloscope, statistical analysis
device at each test at different air gaps. This ensures that self-cal-
of the distribution is made to quantify variability and capabil-
ibration occurs for each installation condition. See the Operating
ity. Although complete repeatability results can be found in the
Characteristics table and the charts in the Characteristic Data:
Characteristic Data: Repeatability section, figure 11 shows the
Relative Timing Accuracy section for performance information.
correlation between magnetic signal strength and repeatability.
Repeatability Because an direct relationship exists between magnetic signal
Repeatability measurement methodology has been formulated to strength and repeatability, optimum repeatability performance
minimize the effect of test system jitter on device measurements. can be attained through minimizing the operating air gap and
By triggering the measurement instrument, such as an oscillo- optimizing the target design.
scope, close to the desired output edge, the speed variations that
Oscilloscope triggers at
Low Resolution Encoder n events after low-resolution pulse
IC Output
Electrical Profile
(target movement
from pin 1 to pin 4)
Oscilloscope trace
of 1000 sweeps for
the same output edge
Statistical distribution
of 1000 sweeps
X
Figure 11. Repeatability Measurement Methodology
VCC(max)
25
Maximum Allowable VCC (V)
20
Low-K PCB
15 (RQJA = 84 ºC/W)
Minimum-K PCB
(RQJA = 126 ºC/W)
10
VCC(min)
0
20 40 60 80 100 120 140 160 180
1300
1200 Lo
(R w-
1100 θJ
K
Mi A = PC
1000 n 84 B
(R imu
900 θJ
A =
m-
KP
ºC
12 /W
800 6 º CB )
C/
700 W)
600
500
400
300
200
100
0
20 40 60 80 100 120 140 160 180
Temperature, TA (°C)
The device must be operated below the maximum junction Example: Reliability for VCC at TA = 150°C, package SG, using
temperature of the device, TJ(max). Under certain combinations of minimum-K PCB.
peak conditions, reliable operation may require derating sup-
Observe the worst-case ratings for the device, specifically:
plied power or improving the heat dissipation properties of the
RJA = 126°C/W, TJ(max) = 165°C, VCC(max) = 26.5 V, and
application. This section presents a procedure for correlating
ICC(max) = 8 mA. Note that ICC(max) at TA = 150°C is lower than
factors affecting operating TJ. (Thermal data is also available on
the ICC(max) at TA = 25°C given in the Operating Characteristics
the Allegro MicroSystems Web site.)
table.
The Package Thermal Resistance, RJA, is a figure of merit sum-
Calculate the maximum allowable power level, PD(max). First,
marizing the ability of the application and the device to dissipate
invert equation 3:
heat from the junction (die), through all paths to the ambient air.
Its primary component is the Effective Thermal Conductivity, Tmax = TJ(max) – TA = 165 °C – 150 °C = 15 °C
K, of the printed circuit board, including adjacent devices and
This provides the allowable increase to TJ resulting from internal
traces. Radiation from the die through the device case, RJC, is
power dissipation. Then, invert equation 2:
relatively small component of RJA. Ambient air temperature,
TA, and air motion are significant external factors, damped by PD(max) = Tmax ÷ RJA = 15°C ÷ 126 °C/W = 119 mW
overmolding.
The effect of varying power levels (Power Dissipation, PD), can Finally, invert equation 1 with respect to voltage:
be estimated. The following formulas represent the fundamental VCC(est) = PD(max) ÷ ICC(max) = 119 mW ÷ 8 mA = 14.9 V
relationships used to estimate TJ, at PD.
The result indicates that, at TA, the application and device can
PD = VIN × IIN (1) dissipate adequate amounts of heat at voltages ≤VCC(est).
Compare VCC(est) to VCC(max). If VCC(est) ≤ VCC(max), then reli-
T = PD × RJA (2) able operation between VCC(est) and VCC(max) requires enhanced
RJA. If VCC(est) ≥ VCC(max), then operation between VCC(est) and
TJ = TA + ΔT (3) VCC(max) is reliable under these conditions.
PD = VIN × IIN = 12 V × 4 mA = 48 mW
5.50±0.05
F 1.10 1.10 F E B
8.00±0.05
LLLLLLL
NNN
1.0 REF
A
1.60±0.10
C
0.71±0.10 0.71±0.10
1.27±0.10
5.50±0.10
Revision History
Revision Revision Date Description of Revision
Rev. 5 June 27, 2011 Update IOUT