Philips Semiconductors Product specification

Thyristor 2N5064
sensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated sensitive gate SYMBOL PARAMETER MAX. UNIT
thyristor in a plastic envelope,
intended for use in general purpose VDRM, Repetitive peak off-state voltages 200 V
switching and phase control VRRM
applications. This device is intended IT(AV) Average on-state current 0.5 A
to be interfaced directly to IT(RMS) RMS on-state current 0.8 A
microcontrollers, logic integreated ITSM Non-repetitive peak on-state current 10 A
circuits and other low power gate
trigger circuits.

PINNING - TO92 variant PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
1 anode
a k
2 gate

3 cathode
3 2 1
g

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM, VRRM Repetitive peak off-state - 200 V
voltages
IT(AV) Average on-state current half sine wave
Tc ≤ 67 ˚C - 0.51 A
Tc ≤ 102 ˚C - 0.255 A
IT(RMS) RMS on-state current all conduction angles - 0.8 A
ITRM Repetitive peak on-state - 8 A
current
ITSM Non-repetitive peak half sine wave; Ta = 25 ˚C prior to surge; - 10 A
on-state current t = 8.3 ms
I2t I2t for fusing t = 8.3 ms - 0.4 A2s
IGM Peak gate current Ta = 25˚C, tp = 300µs; f = 120 Hz - 1 A
VGM Peak gate voltage - 5 V
VRGM Peak reverse gate voltage - 5 V
PGM Peak gate power Ta = 25˚C - 0.1 W
PG(AV) Average gate power Ta = 25˚C, over any 16 ms period - 0.01 W
Tstg Storage temperature -65 150 ˚C
Tj Operating junction -65 125 ˚C
temperature

October 1997 1 Rev 1.200

Philips Semiconductors Product specification

Thyristor 2N5064
sensitive gate

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
Rth j-c Thermal resistance see note: - - 75 K/W
junction to case
Rth j-a Thermal resistance - 200 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current Tc = 25 ˚C - - 200 µA
Tc = -65 ˚C - - 350 µA
VD = VDRM(max); RL = 100 Ω; gate open
circuit
IL Latching current VD = 12 V; RGK = 1 kΩ - - 6 mA
IH Holding current VD = 12 V; RGK = 1 kΩ - - 5 mA
VT On-state voltage IT = 1.2 A peak; tp = 300 µs; δ ≤ 0.01 - - 1.7 V
VGT Gate trigger voltage Tj = 25 ˚C - - 0.8 V
Tj = -65 ˚C - - 1.2 V
Tj = 125 ˚C 0.1 - - V
VD = VDRM(max); RL = 100 Ω; gate open
circuit
ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max)
Tj = 25 ˚C - - 10 µA
Tj = 125 ˚C - - 50 µA

DYNAMIC CHARACTERISTICS
Tc = 25 ˚C, RGK = 1 kΩ unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; - 25 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
tgt Gate controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA; - 2 - µs
time dIG/dt = 0.1 A/µs
tq Circuit commutated VDM = 67% VDRM(max); Tj = 125 ˚C; - 100 - µs
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ

1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.

October 1997 2 Rev 1.200

Philips Semiconductors Product specification

Thyristor 2N5064
sensitive gate

MECHANICAL DATA

Dimensions in mm
2.54
Net Mass: 0.2 g

0.66
0.56 1.6

4.8 max 4.2 max

5.2 max

2.5 max

12.7 min

0.48 0.40
0.40 min
321
Fig.1. TO92; plastic envelope.

Notes
1. Epoxy meets UL94 V0 at 1/8".

October 1997 3 Rev 1.200

Philips Semiconductors Product specification

Thyristor 2N5064
sensitive gate

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1997 4 Rev 1.200

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