Seminar on Micro-Electro-Mechanical Systems

SECTION 1 INTRODUCTION

Microelectromechanical systems (MEMS) are small integrated devices

or systems that combine electrical and mechanical components. They range in size
from the sub micrometer level to the millimeter level and there can be any number,
from a few to millions, in a particular system. MEMS extend the fabrication
techniques developed for the integrated circuit industry to add mechanical elements
such as beams, gears, diaphragms, and springs to devices.

Examples of MEMS device applications include inkjet-printer

cartridges, accelerometer, miniature robots, microengines, locks inertial sensors
microtransmissions, micromirrors, micro actuator (Mechanisms for activating process
control equipment by use of pneumatic, hydraulic, or electronic signals) optical
scanners, fluid pumps, transducer, pressure and flow sensors. New applications are
emerging as the existing technology is applied to the miniaturization and integration
of conventional devices.

These systems can sense, control, and activate mechanical processes on

the micro scale, and function individually or in arrays to generate effects on the macro
scale. The micro fabrication technology enables fabrication of large arrays of devices,
which individually perform simple tasks, but in combination can accomplish
complicated functions.

MEMS are not about any one application or device, nor are they defined
by a single fabrication process or limited to a few materials. They are a fabrication
approach that conveys the advantages of miniaturization, multiple components, and
microelectronics to the design and construction of integrated electromechanical
systems. MEMS are not only about miniaturization of mechanical systems; they are
also a new paradigm for designing mechanical devices and systems.

SECTION 1.1 WHAT IS MEMS TECHNOLOGY?

Micro-Electro-Mechanical Systems (MEMS) is the integration of

mechanical elements, sensors, actuators, and electronics on a common silicon
substrate through microfabrication technology. While the electronics are fabricated
using integrated circuit (IC) process sequences, the micromechanical components are
fabricated using compatible "micromachining" processes that selectively etch away
parts of the silicon wafer or add new structural layers to form the mechanical and
electromechanical devices.

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Microelectronic integrated circuits can be thought of as the "brains" of a

system and MEMS augments this decision-making capability with "eyes" and "arms",
to allow microsystems to sense and control the environment. Sensors gather
information from the environment through measuring mechanical, thermal, biological,
chemical, optical, and magnetic phenomena. The electronics then process the
information derived from the sensors and through some decision making capability
direct the actuators to respond by moving, positioning, regulating, pumping, and
filtering, thereby controlling the environment for some desired outcome or purpose.
Because MEMS devices are manufactured using batch fabrication techniques similar
to those used for integrated circuits, unprecedented levels of functionality, reliability,
and sophistication can be placed on a small silicon chip at a relatively low cost.

SECTION 1.2 WHAT ARE MEMS / MICROSYSTEMS?

MEMS is an abbreviation for Micro Electro Mechanical Systems. This

is a rapidly emerging technology combining electrical, electronic, mechanical, optical,
material, chemical, and fluids engineering disciplines. As the smallest commercially
produced "machines", MEMS devices are similar to traditional sensors and actuators
although much, much smaller. E.g. Complete systems are typically a few millimeters
across, with individual features devices of the order of 1-100 micrometers across.

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MEMS devices are manufactured either using processes based on Integrated Circuit
fabrication techniques and materials, or using new emerging fabrication technologies
such as micro injection molding. These former processes involve building the device
up layer by layer, involving several material depositions and etch steps. A typical
MEMS fabrication technology may have a 5 step process. Due to the limitations of
this "traditional IC" manufacturing process MEMS devices are substantially planar,
having very low aspect ratios (typically 5 -10 micro meters thick). It is important to
note that there are several evolving fabrication techniques that allow higher aspect
ratios such as deep x-ray lithography, electrodeposition, and micro injection molding.

MEMS devices are typically fabricated onto a substrate (chip) that may
also contain the electronics required to interact with the MEMS device. Due to the
small size and mass of the devices, MEMS components can be actuated
electrostatically (piezoelectric and bimetallic effects can also be used). The position of
MEMS components can also be sensed capacitively. Hence the MEMS electronics
include electrostatic drive power supplies, capacitance charge comparators, and signal
conditioning circuitry. Connection with the macroscopic world is via wire bonding
and encapsulation into familiar BGA, MCM, surface mount, or leaded IC packages.

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A common MEMS actuator is the "linear comb drive" (shown above) which consists
of rows of interlocking teeth; half of the teeth are attached to a fixed "beam", the other
half attach to a movable beam assembly. Both assemblies are electrically insulated.
By applying the same polarity voltage to both parts the resultant electrostatic force
repels the movable beam away from the fixed. Conversely, by applying opposite
polarity the parts are attracted. In this manner the comb drive can be moved "in" or
"out" and either DC or AC voltages can be applied. The small size of the parts (low
inertial mass) means that the drive has a very fast response time compared to its
macroscopic counterpart. The magnitude of electrostatic force is multiplied by the
voltage or more commonly the surface area and number of teeth. Commercial comb
drives have several thousand teeth, each tooth approximately 10 micro meters long.
Drive voltages are CMOS levels.

The linear push / pull motion of a comb drive can be converted into
rotational motion by coupling the drive to push rod and pinion on a wheel. In this
manner the comb drive can rotate the wheel in the same way a steam engine
functions!

SECTION 3 MEMS DESCRIPTION

MEMS technology can be implemented using a number of different

materials and manufacturing techniques; the choice of which will depend on the
device being created and the market sector in which it has to operate.

SILICON

The economies of scale, ready availability of cheap high-quality

materials and ability to incorporate electronic functionality make silicon attractive for
a wide variety of MEMS applications. Silicon also has significant advantages
engendered through its material properties. In single crystal form, silicon is an almost
perfect Hookean material, meaning that when it is flexed there is virtually no
hysteresis and hence almost no energy dissipation. The basic techniques for producing
all silicon based MEMS devices are deposition of material layers, patterning of these
layers by photolithography and then etching to produce the required shapes.

POLYMERS

Even though the electronics industry provides an economy of scale for

the silicon industry, crystalline silicon is still a complex and relatively expensive
material to produce. Polymers on the other hand can be produced in huge volumes,
with a great variety of material characteristics. MEMS devices can be made from
polymers by processes such as injection moulding, embossing or stereolithography
and are especially well suited to microfluidic applications such as disposable blood
testing cartridges.

METALS

Metals can also be used to create MEMS elements. While metals do not
have some of the advantages displayed by silicon in terms of mechanical properties,
when used within their limitations, metals can exhibit very high degrees of reliability.

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Metals can be deposited by electroplating, evaporation, and sputtering processes.
Commonly used metals include gold, nickel, aluminum, chromium, titanium,
tungsten, platinum, and silver

SECTION 4 MEMS DESIGN PROCESS

There are three basic building blocks in MEMS technology, which are,
Deposition Process-the ability to deposit thin films of material on a substrate,
Lithography-to apply a patterned mask on top of the films by photolithograpic
imaging, and Etching-to etch the films selectively to the mask. A MEMS process is
usually a structured sequence of these operations to form actual devices.

SECTION 4.1 DEPOSITION PROCESSES

One of the basic building blocks in MEMS processing is the ability to

deposit thin films of material. In this text we assume a thin film to have a thickness
anywhere between a few nanometers to about 100 micrometer

MEMS deposition technology can be classified in two groups:

1. Depositions that happen because of a chemical reaction:

o Chemical Vapor Deposition (CVD)
o Electrodeposition
o Epitaxy
o Thermal oxidation

These processes exploit the creation of solid materials directly from chemical
reactions in gas and/or liquid compositions or with the substrate material. The
solid material is usually not the only product formed by the reaction.
Byproducts can include gases, liquids and even other solids.

2. Depositions that happen because of a physical reaction:

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o Physical Vapor Deposition (PVD)
o Casting

Common for all these processes are that the material deposited is physically
moved on to the substrate. In other words, there is no chemical reaction which
forms the material on the substrate. This is not completely correct for casting
processes, though it is more convenient to think of them that way.

This is by no means an exhaustive list since technologies evolve continuously.

SECTION 4.1.1 CHEMICAL VAPOR DEPOSITION (CVD)

In this process, the substrate is placed inside a reactor to which a number

of gases are supplied. The fundamental principle of the process is that a chemical
reaction takes place between the source gases. The product of that reaction is a solid
material with condenses on all surfaces inside the reactor.

The two most important CVD technologies in MEMS are the Low
Pressure CVD (LPCVD) and Plasma Enhanced CVD (PECVD). The LPCVD process
produces layers with excellent uniformity of thickness and material characteristics.
The main problems with the process are the high deposition temperature (higher than
600°C) and the relatively slow deposition rate. The PECVD process can operate at
lower temperatures (down to 300° C) thanks to the extra energy supplied to the gas
molecules by the plasma in the reactor. However, the quality of the films tend to be
inferior to processes running at higher temperatures. Secondly, most PECVD
deposition systems can only deposit the material on one side of the wafers on 1 to 4
wafers at a time. LPCVD systems deposit films on both sides of at least 25 wafers at a
time. A schematic diagram of a typical LPCVD reactor is shown in the figure below.

Figure 1: Typical hot-wall LPCVD reactor.

ELECTRODEPOSITION

This process is also known as "electroplating" and is typically restricted

to electrically conductive materials. There are basically two technologies for plating:

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Electroplating and Electroless plating. In the electroplating process the substrate is
placed in a liquid solution (electrolyte). When an electrical potential is applied
between a conducting area on the substrate and a counter electrode (usually platinum)
in the liquid, a chemical redox process takes place resulting in the formation of a layer
of material on the substrate and usually some gas generation at the counter electrode.

In the electroless plating process a more complex chemical solution is

used, in which deposition happens spontaneously on any surface which forms a
sufficiently high electrochemical potential with the solution. This process is desirable
since it does not require any external electrical potential and contact to the substrate
during processing. Unfortunately, it is also more difficult to control with regards to
film thickness and uniformity. A schematic diagram of a typical setup for
electroplating is shown in the figure below.

EPITAXY

This technology is quite similar to what happens in CVD processes,

however, if the substrate is an ordered semiconductor crystal (i.e. silicon, gallium
arsenide), it is possible with this process to continue building on the substrate with the
same crystallographic orientation with the substrate acting as a seed for the
deposition. If an amorphous/polycrystalline substrate surface is used, the film will
also be amorphous or polycrystalline.

Figure 3: Typical cold-wall vapor phase epitaxial reactor.

THERMAL OXIDATION

This is one of the most basic deposition technologies. It is simply

oxidation of the substrate surface in an oxygen rich atmosphere. The temperature is
raised to 800° C-1100° C to speed up the process. This is also the only deposition
technology which actually consumes some of the substrate as it proceeds. The growth

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of the film is spurned by diffusion of oxygen into the substrate, which means the film
growth is actually downwards into the substrate. As the thickness of the oxidized
layer increases, the diffusion of oxygen to the substrate becomes more difficult
leading to a parabolic relationship between film thickness and oxidation time for films
thicker than ~100nm. This process is naturally limited to materials that can be
oxidized, and it can only form films that are oxides of that material. This is the
classical process used to form silicon dioxide on a silicon substrate. A schematic
diagram of a typical wafer oxidation furnace is shown in the figure below.

WHEN DO WE WANT TO USE THERMAL OXIDATION?

Whenever you can! This is a simple process, which unfortunately

produces films with somewhat limited use in MEMS components. It is typically used
to form films that are used for electrical insulation or that are used for other process
purposes later in a process sequence.

Figure 4: Typical wafer oxidation furnace.

SECTION 4.1.2 PHYSICAL VAPOR DEPOSITION (PVD)

PVD covers a number of deposition technologies in which material is

released from a source and transferred to the substrate. The two most important
technologies are evaporation and sputtering.

WHEN DO WE WANT TO USE PVD?

PVD comprises the standard technologies for deposition of metals. It is

far more common than CVD for metals since it can be performed at lower process
risk and cheaper in regards to materials cost. The quality of the films are inferior to
CVD, which for metals means higher resistivity and for insulators more defects and
traps. The step coverage is also not as good as CVD.

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The choice of deposition method (i.e. evaporation vs. sputtering) may in
many cases be arbitrary, and may depend more on what technology is available for
the specific material at the time.

EVAPORATION

In evaporation the substrate is placed inside a vacuum chamber, in

which a block (source) of the material to be deposited is also located. The source
material is then heated to the point where it starts to boil and evaporate. The vacuum
is required to allow the molecules to evaporate freely in the chamber, and they
subsequently condense on all surfaces. This principle is the same for all evaporation
technologies, only the method used to the heat (evaporate) the source material differs.
There are two popular evaporation technologies, which are e-beam evaporation and
resistive evaporation each referring to the heating method. In e-beam evaporation, an
electron beam is aimed at the source material causing local heating and evaporation.
In resistive evaporation, a tungsten boat, containing the source material, is heated
electrically with a high current to make the material evaporate. Many materials are
restrictive in terms of what evaporation method can be used (i.e. aluminum is quite
difficult to evaporate using resistive heating), which typically relates to the phase
transition properties of that material. A schematic diagram of a typical system for e-
beam evaporation is shown in the figure below.

Figure 5: Typical system for e-beam evaporation of materials.

SPUTTERING

Sputtering is a technology in which the material is released from the

source at much lower temperature than evaporation. The substrate is placed in a
vacuum chamber with the source material, named a target, and an inert gas (such as
argon) is introduced at low pressure. Gas plasma is struck using an RF power source,
causing the gas to become ionized. The ions are accelerated towards the surface of the
target, causing atoms of the source material to break off from the target in vapor form
and condense on all surfaces including the substrate. As for evaporation, the basic

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principle of sputtering is the same for all sputtering technologies. The differences
typically relate to the manor in which the ion bombardment of the target is realized. A
schematic diagram of a typical RF sputtering system is shown in the figure below.

Figure 6: Typical RF sputtering system.

CASTING

In this process the material to be deposited is dissolved in liquid form in

a solvent. The material can be applied to the substrate by spraying or spinning. Once
the solvent is evaporated, a thin film of the material remains on the substrate. This is
particularly useful for polymer materials, which may be easily dissolved in organic
solvents, and it is the common method used to apply photoresist to substrates (in
photolithography). The thicknesses that can be cast on a substrate range all the way
from a single monolayer of molecules (adhesion promotion) to tens of micrometers.
In recent years, the casting technology has also been applied to form films of glass
materials on substrates. The spin casting process is illustrated in the figure below.

WHEN DO WE WANT TO USE CASTING?

Casting is a simple technology which can be used for a variety of

materials (mostly polymers). The control on film thickness depends on exact
conditions, but can be sustained within +/-10% in a wide range. If you are planning to
use photolithography you will be using casting, which is an integral part of that
technology. There are also other interesting materials such as polyimide and spin-on
glass which can be applied by casting.

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Figure 7: The spin casting process as used for photoresist in photolithography.

SECTION 4.2 LITHOGRAPHY

SECTION 4.2.1 PATTERN TRANSFER

Lithography in the MEMS context is typically the transfer of a pattern to

a photosensitive material by selective exposure to a radiation source such as light. A
photosensitive material is a material that experiences a change in its physical
properties when exposed to a radiation source. If we selectively expose a
photosensitive material to radiation (e.g. by masking some of the radiation) the pattern
of the radiation on the material is transferred to the material exposed, as the properties
of the exposed and unexposed regions differs (as shown in figure 1).

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Figure 1: Transfer of a pattern to a photosensitive material.

This discussion will focus on optical lithography, which is simply lithography using a
radiation source with wavelength(s) in the visible spectrum.

In lithography for micromachining, the photosensitive material used is

typically a photoresist (also called resist, other photosensitive polymers are also used).
When resist is exposed to a radiation source of a specific a wavelength, the chemical
resistance of the resist to developer solution changes. If the resist is placed in a
developer solution after selective exposure to a light source, it will etch away one of
the two regions (exposed or unexposed). If the exposed material is etched away by the
developer and the unexposed region is resilient, the material is considered to be a
positive resist (shown in figure 2a). If the exposed material is resilient to the
developer and the unexposed region is etched away, it is considered to be a negative
resist (shown in figure 2b).

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Figure 2: a) Pattern definition in positive resist, b) Pattern definition in negative

resist.

Lithography is the principal mechanism for pattern definition in

micromachining. Photosensitive compounds are primarily organic, and do not
encompass the spectrum of materials properties of interest to micro-machinists.
However, as the technique is capable of producing fine features in an economic
fashion, a photosensitive layer is often used as a temporary mask when etching an
underlying layer, so that the pattern may be transferred to the underlying layer (shown
in figure 3a). Photoresist may also be used as a template for patterning material
deposited after lithography (shown in figure 3b). The resist is subsequently etched
away, and the material deposited on the resist is "lifted off".

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The deposition template (lift-off) approach for transferring a pattern

from resist to another layer is less common than using the resist pattern as an etch
mask. The reason for this is that resist is incompatible with most MEMS deposition
processes, usually because it cannot withstand high temperatures and may act as a
source of contamination.

Figure 3: a) Pattern transfer from patterned photoresist to underlying layer by

etching, b) Pattern transfer from patterned photoresist to overlying layer by lift-off.

Once the pattern has been transferred to another layer, the resist is
usually stripped. This is often necessary as the resist may be incompatible with further
micromachining steps. It also makes the topography more dramatic, which may
hamper further lithography steps.

SECTION 4.2.3 EXPOSURE

The exposure parameters required in order to achieve accurate pattern

transfer from the mask to the photosensitive layer depend primarily on the wavelength
of the radiation source and the dose required to achieve the desired properties change
of the photoresist. Different photoresists exhibit different sensitivities to different
wavelengths. The dose required per unit volume of photoresist for good pattern
transfer is somewhat constant; however, the physics of the exposure process may
affect the dose actually received. For example a highly reflective layer under the
photoresist may result in the material experiencing a higher dose than if the
underlying layer is absorptive, as the photoresist is exposed both by the incident

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radiation as well as the reflected radiation. The dose will also vary with resist
thickness.

There are also higher order effects, such as interference patterns in thick
resist films on reflective substrates, which may affect the pattern transfer quality and
sidewall properties.

At the edges of pattern light is scattered and diffracted, so if an image is

overexposed, the dose received by photoresist at the edge that shouldn't be exposed
may become significant. If we are using positive photoresist, this will result in the
photoresist image being eroded along the edges, resulting in a decrease in feature size
and a loss of sharpness or corners (as shown in figure 9). If we are using a negative
resist, the photoresist image is dilated, causing the features to be larger than desired,
again accompanied by a loss of sharpness of corners. If an image is severely
underexposed, the pattern may not be transferred at all, and in less sever cases the
results will be similar to those for overexposure with the results reversed for the
different polarities of resist.

If the surface being exposed is not flat, the high-resolution image of the
mask on the wafer may be distorted by the loss of focus of the image across the
varying topography. This is one of the limiting factors of MEMS lithography when
high aspect ratio features are present. High aspect ratio features also experience
problems with obtaining even resist thickness coating, which further degrades pattern
transfer and complicates the associated processing.

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Figure 9: Over and under-exposure of positive resist.

SECTION 4.2.4 THE LITHOGRAPHY MODULE

Typically lithography is performed as part of a well-characterized

module, which includes the wafer surface preparation, photoresist deposition,
alignment of the mask and wafer, exposure, develop and appropriate resist
conditioning. The lithography process steps need to be characterized as a sequence in
order to ensure that the remaining resist at the end of the modules is an optimal image
of the mask, and has the desired sidewall profile.

A brief explanation of the standard process steps included in a

lithography module is (in sequence):

• Dehydration bake - dehydrate the wafer to aid resist adhesion.

• HMDS prime - coating of wafer surface with adhesion promoter.
• Resist spin/spray - coating of the wafer with resist either by spinning or
spraying. Typically desire a uniform coat.

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• Soft bake - drive off some of the solvent in the resist, may result in a
significant loss of mass of resist (and thickness). Makes resist more viscous.
• Alignment - align pattern on mask to features on wafers.
• Exposure - projection of mask image on resist causing selective chemical
property change.
• Post exposure bake - baking of resist to drive off further solvent content.
• Develop - selective removal of resist after exposure. Usually a wet process.
• Hard bake - drive off most of the remaining solvent from the resist.
• Descum - removal of thin layer of resist scum that may occlude open regions
in pattern helps to open up corners.

We make a few assumptions about photolithography. Firstly, we assume

that a well characterized module exists that: prepares the wafer surface, deposits the
requisite resist thickness, aligns the mask perfectly, exposes the wafer with the
optimal dosage, develops the resist under the optimal conditions, and bakes the resist
for the appropriate times at the appropriate locations in the sequence. Unfortunately,
even if the module is executed perfectly, the properties of lithography are very feature
and topography dependent. It is therefore necessary for the designer to be aware of
certain limitations of lithography, as well as the information they should provide to
the technician performing the lithography.

The designer influences the lithographic process through their selections of materials,
topography and geometry. The material(s) upon which the resist is to be deposited is
important, as it affects the resist adhesion. The reflectivity and roughness of the layer
beneath the photoresist determines the amount of reflected and dispersed light present
during exposure. It is difficult to obtain a nice uniform resist coat across a surface
with high topography, which complicates exposure and development as the resist has
different thickness in different locations.

Figure 10: Lithography tool depth of focus and surface topology.

SECTION 4.3 ETCHING PROCESSES

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In order to form a functional MEMS structure on a substrate, it is
necessary to etch the thin films previously deposited and/or the substrate itself. In
general, there are two classes of etching processes:

1. Wet etching where the material is dissolved when immersed in a chemical

solution
2. Dry etching where the material is sputtered or dissolved using reactive ions or
a vapor phase etchant

SECTION 5 FABRICATION TECHNOLOGIES

The three characteristic features of MEMS fabrication technologies are

miniaturization, multiplicity, and microelectronics. Miniaturization enables the
production of compact, quick-response devices. Multiplicity refers to the batch
fabrication inherent in semiconductor processing, which allows thousands or millions
of components to be easily and concurrently fabricated. Microelectronics provides the
intelligence to MEMS and allows the monolithic merger of sensors, actuators, and
logic to build closed-loop feedback components and systems. The successful
miniaturization and multiplicity of traditional electronics systems would not have
been possible without IC fabrication technology. Therefore, IC fabrication
technology, or microfabrication, has so far been the primary enabling technology for
the development of MEMS. Microfabrication provides a powerful tool for batch
processing and miniaturization of mechanical systems into a dimensional domain not
accessible by conventional techniques. Furthermore, microfabrication provides an
opportunity for integration of mechanical systems with electronics to develop high-
performance closed-loop-controlled MEMS.

Advances in IC technology in the last decade have brought about corresponding

progress in MEMS fabrication processes. Manufacturing processes allow for the
monolithic integration of microelectromechanical structures with driving, controlling,
and signal-processing electronics. This integration promises to improve the
performance of micromechanical devices as well as reduce the cost of manufacturing,
packaging, and instrumenting these devices.

SECTION 5.1 IC FABRICATION

Any discussion of MEMS requires a basic understanding of IC

fabrication technology, or microfabrication, the primary enabling technology for the
development of MEMS. The major steps in IC fabrication technology are:

 Film growth: Usually, a polished Si wafer is used as the substrate, on which a

thin film is grown. The film, which may be epitaxial Si, SiO 2, silicon nitride
(Si3N4), polycrystalline Si, or metal, is used to build both active or passive
components and interconnections between circuits.
 Doping: To modulate the properties of the device layer, a low and controllable
level of an atomic impurity may be introduced into the layer by thermal
diffusion or ion implantation.
 Lithography: A pattern on a mask is then transferred to the film by means of a
photosensitive (i.e., light sensitive) chemical known as a photoresist. The

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process of pattern generation and transfer is called photolithography. A typical
mask consists of a glass plate coated with a patterned chromium (Cr) film.
 Etching: Next is the selective removal of unwanted regions of a film or
substrate for pattern delineation. Wet chemical etching or dry etching may be
used. Etch-mask materials are used at various stages in the removal process to
selectively prevent those portions of the material from being etched. These
materials include SiO2, Si3N4, and hard-baked photoresist.
 Dicing: The finished wafer is sawed or machined into small squares, or dice,
from which electronic components can be made.
 Packaging: The individual sections are then packaged, a process that involves
physically locating, connecting, and protecting a device or component. MEMS
design is strongly coupled to the packaging requirements, which in turn are
dictated by the application environment.

SECTION 5.2 BULK MICROMACHINING AND WAFER BONDING

Bulk micromachining is an extension of IC technology for the

fabrication of 3D structures. Bulk micromachining of Si uses wet- and dry-etching
techniques in conjunction with etch masks and etch stops to sculpt micromechanical
devices from the Si substrate. The two key capabilities that make bulk
micromachining a viable technology are:

 Anisotropic etchants of Si, such as ethylene-diamine and pyrocatechol (EDP),

potassium hydroxide (KOH), and hydrazine (N2H4). These preferentially etch
single crystal Si along given crystal planes.
 Etch masks and etch-stop techniques that can be used with Si anisotropic
etchants to selectively prevent regions of Si from being etched. Good etch

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masks are provided by SiO2 and Si3N4, and some metallic thin films such as Cr
and Au (gold).

SECTION 5.4 MICRO MOLDING

In the micromolding process, microstructures are fabricated using molds

to define the deposition of the structural layer. The structural material is deposited
only in those areas constituting the microdevice structure, in contrast to bulk and
surface micromachining, which feature blanket deposition of the structural material
followed by etching to realize the final device geometry. After the structural layer
deposition, the mold is dissolved in a chemical etchant that does not attack the
structural material. One of the most prominent micromolding processes is the LIGA
process. LIGA is a German acronym standing for lithographie, galvanoformung, und
abformung (lithography, electroplating, and molding). This process can be used for
the manufacture of high-aspect-ratio 3D microstructures in a wide variety of
materials, such as metals, polymers, ceramics, and glasses. Photosensitive polyimides
are also used for fabricating plating molds. The photolithography process is similar to
conventional photolithography, except that polyimide works as a negative resist.

Example: An insulin pump fabricated by classic MEMS technology

1. PUMPING MEMBRANE 2. PUMPING CHAMBER

3. INLET 4. OUTLET
5. LARGE MESA 6. UPPER GLASS PLATE
7. BOTTOM GLASS PLATE 8. PATTERNED THIN LAYER

SECTION 6 CURRENT CHALLENGES

MEMS and Nanotechnology is currently used in low- or medium-

volume applications. Some of the obstacles preventing its wider adoption are:

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LIMITED OPTIONS

Most companies who wish to explore the potential of MEMS and

Nanotechnology have very limited options for prototyping or manufacturing devices,
and have no capability or expertise in microfabrication technology. Few companies
will build their own fabrication facilities because of the high cost. A mechanism
giving smaller organizations responsive and affordable access to MEMS and Nano
fabrication is essential.

PACKAGING

The packaging of MEMS devices and systems needs to improve

considerably from its current primitive state. MEMS packaging is more challenging
than IC packaging due to the diversity of MEMS devices and the requirement that
many of these devices be in contact with their environment. Currently almost all
MEMS and Nano development efforts must develop a new and specialized package
for each new device. Most companies find that packaging is the single most expensive
and time consuming task in their overall product development program. As for the
components themselves, numerical modeling and simulation tools for MEMS
packaging are virtually non-existent. Approaches which allow designers to select
from a catalog of existing standardized packages for a new MEMS device without
compromising performance would be beneficial.

FABRICATION KNOWLEDGE REQUIRED

Currently the designer of a MEMS device requires a high level of

fabrication knowledge in order to create a successful design. Often the development
of even the most mundane MEMS device requires a dedicated research effort to find a
suitable process sequence for fabricating it. MEMS device design needs to be
separated from the complexities of the process sequence.

SECTION 7 APPLICATIONS
PRESSURE SENSORS

MEMS pressure microsensors typically have a flexible diaphragm that

deforms in the presence of a pressure difference. The deformation is converted to an
electrical signal appearing at the sensor output. A pressure sensor can be used to sense
the absolute air pressure within the intake manifold of an automobile engine, so that
the amount of fuel required for each engine cylinder can be computed.

ACCELEROMETERS

Accelerometers are acceleration sensors. An inertial mass suspended by

springs is acted upon by acceleration forces that cause the mass to be deflected from
its initial position. This deflection is converted to an electrical signal, which appears
at the sensor output. The application of MEMS technology to accelerometers is a
relatively new development.

Accelerometers in consumer electronics devices such as game

controllers (Nintendo Wii), personal media players / cell phones (Apple iPhone ) and

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a number of Digital Cameras (various Canon Digital IXUS models). Also used in PCs
to park the hard disk head when free-fall is detected, to prevent damage and data loss.
iPod Touch: When the technology become sensitive. MEMS-based sensors are ideal
for a wide array of applications in consumer, communication, automotive and
industrial markets.

The consumer market has been a key driver for MEMS technology
success. For example, in a mobile phone, MP3/MP4 player or PDA, these sensors
offer a new intuitive motion-based approach to navigation within and between pages.
In game controllers, MEMS sensors allow the player to play just moving the
controller/pad; the sensor determines the motion.

INERTIAL SENSORS

Inertial sensors are a type sensitivity

of accelerometer and are one of the
principal commercial products that
utilize surface micromachining. They
are used as airbag-deployment sensors
in automobiles, and as tilt or shock
sensors. The application of these
accelerometers to inertial measurement
units is limited by the need to
manually align and assemble them into
three-axis systems, and by the resulting
alignment tolerances, their lack of in-
chip analog-to-digital conversion
circuitry, and their lower limit of

MICROENGINES

A three-level polysilicon micromachining process has enabled the

fabrication of devices with increased degrees of complexity. The process includes

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three movable levels of polysilicon, each separated by a sacrificial oxide layer, plus a
stationary level. Microengines can be used to drive the wheels of microcombination
locks. They can also be used in combination with a microtransmission to drive a pop-
up mirror out of a plane. This device is known as a micromirror.

SOME OTHER COMMERCIAL APPLICATIONS INCLUDE:

• Inkjet printers, which use piezoelectrics or thermal bubble ejection to deposit

ink on paper.
• Accelerometers in modern cars for a large number of purposes including
airbag deployment in collisions.
• MEMS gyroscopes used in modern cars and other applications to detect yaw;
e.g. to deploy a roll over bar or trigger dynamic stability control.
• Silicon pressure sensors e.g. car tire pressure sensors, and disposable blood
pressure sensors.
• Displays e.g. the DMD chip in a projector based on DLP technology has on its
surface several hundred thousand micromirrors.
• Optical switching technology which is used for switching technology and
alignment for data communications.
• Bio-MEMS applications in medical and health related technologies from Lab-
On-Chip to MicroTotalAnalysis (biosensor, chemosensor).

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Interferometric modulator display (IMOD) applications in consumer

electronics. Used to create interferometric modulation - reflective display technology
as found in mirasol displays.

MEMS IC fabrication technologies have also allowed the manufacture

of advanced memory devices (nanochips/microchips).

As a final example, MEMS technology has been used in fabricating

vaporization microchambers for vaporizing liquid microthrusters for nanosatellites.
The chamber is part of a microchannel with a height of 2-10 microns, made using
silicon and glass substrates

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ADVANTAGES OF MEMS DISADVANTAGES OF MEMS

 Minimize energy and materials  Farm establishment requires

use in manufacturing huge investments
 Cost/performance advantages  Micro-components are Costly
 Improved reproducibility compare to macro-components
 Improved accuracy and  Design includes very much
reliability complex procedures
 Increased selectivity and  Prior knowledge is needed to
sensitivity integrate MEMS devices

SECTION 8 THE FUTURE

Each of the three basic microsystems technology processes we have

seen, bulk micromachining, sacrificial surface micromachining, and
micromolding/LIGA, employs a different set of capital and intellectual resources.
MEMS manufacturing firms must choose which specific microsystems manufacturing
techniques to invest in.

MEMS technology has the potential to change our daily lives as much as
the computer has. However, the material needs of the MEMS field are at a
preliminary stage. A thorough understanding of the properties of existing MEMS
materials is just as important as the development of new MEMS materials.

Future MEMS applications will be driven by processes enabling greater

functionality through higher levels of electronic-mechanical integration and greater
numbers of mechanical components working alone or together to enable a complex
action. Future MEMS products will demand higher levels of electrical-mechanical
integration and more intimate interaction with the physical world. The high up-front
investment costs for large-volume commercialization of MEMS will likely limit the
initial involvement to larger companies in the IC industry. Advancing from their
success as sensors, MEMS products will be embedded in larger non-MEMS systems,
such as printers, automobiles, and biomedical diagnostic equipment, and will enable
new and improved systems.

SECTION 9 CONCLUSION

The automotive industry, motivated by the need for more efficient safety
systems and the desire for enhanced performance, is the largest consumer of MEMS-
based technology. In addition to accelerometers and gyroscopes, micro-sized tire
pressure systems are now standard issues in new vehicles, putting MEMS pressure
sensors in high demand. Such micro-sized pressure sensors can be used by physicians
and surgeons in a telemetry system to measure blood pressure at a stet, allowing early
detection of hypertension and restenosis. Alternatively, the
detection of bio molecules can benefit most from MEMS-based

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biosensors. Medical applications include the detection of DNA
sequences and metabolites. MEMS biosensors can also monitor
several chemicals simultaneously, making them perfect for
detecting toxins in the environment.

Lastly, the dynamic range of MEMS based silicon

ultrasonic sensors have many advantages over existing
piezoelectric sensors in non-destructive evaluation, proximity
sensing and gas flow measurement. Silicon ultrasonic sensors are
also very effective immersion sensors and provide improved
performance in the areas of medical imaging and liquid level
detection.

• The medical, wireless technology, biotechnology, computer, automotive and

aerospace industries are only a few that will benefit greatly from MEMS.
• This enabling technology allowing the development of smart products,
augmenting the computational ability of microelectronics with the perception
and control capabilities of microsensors and microactuators and expanding the
space of possible designs and applications.
• MEMS devices are manufactured for unprecedented levels of functionality,
reliability, and sophistication can be placed on a small silicon chip at a
relatively low cost.
• MEMS promises to revolutionize nearly every product category by bringing
together silicon-based microelectronics with micromachining technology,
making possible the realization of complete systems-on-a-chip.
• MEMS will be the indispensable factor for advancing technology in the 21st
century and it promises to create entirely new categories of products.

SECTION 11 REFERENCES

Online Resources

• BSAC http://www-bsac.eecs.berkeley.edu/
• DARPA MTO http://www.darpa.mil/mto/
• IEEE Explore http://ieeexplore.ieee.org/Xplore/DynWel.jsp
• Introduction to Microengineering http://www.dbanks.demon.co.uk/ueng/
• MEMS Clearinghouse http://www.memsnet.org/
• MEMS Exchange http://www.mems-exchange.org/
• MEMS Industry Group http://www.memsindustrygroup.org/
• MOSIS http://www.mosis.org/
• MUMPS http://www.memscap.com/memsrus/crmumps.html
• Stanford Centre for Integrated Systems http://www-cis.stanford.edu/
• USPTO http://www.uspto.gov/
• Trimmer http://www.trimmer.net/
• Yole Development http://www.yole.fr/pagesAn/accueil.asp

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Journals

• Journal of Micromechanical Systems

• Journal of Micromechanics and Microengineering
• Micromachine Devices
• Sensors Magazine

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