STF24N60M2, STFI24N60M2,

STFW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP, I2PAKFP and TO-3PF packages
Datasheet − production data

Features
Order codes VDS @ TJmax RDS(on) max ID
STF24N60M2
3
2
1 1 2
3
STFI24N60M2 650 V 0.19 Ω 18 A
TO-220FP
I2PAKFP STFW24N60M2
(TO-281)
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
1
• 100% avalanche tested

2
3 • Zener-protected
1

TO-3PF Applications
• Switching applications
Figure 1. Internal schematic diagram
• LLC converters, resonant converters
D(2)

Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
G(1) technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
S(3)
AM01476v1

Table 1. Device summary

Order codes Marking Package Packaging

STF24N60M2 TO-220FP
STFI24N60M2 24N60M2 I2PAKFP (TO-281) Tube
STFW24N60M2 TO-3PF

April 2014 DocID024026 Rev 6 1/18

This is information on a product in full production. www.st.com 18
Contents STF24N60M2, STFI24N60M2, STFW24N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1 TO-220FP, STF24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 I2PAKFP, STFI24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.3 TO-3PF, STFW24N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220FP,
TO-3PF
I2PAKFP

VGS Gate-source voltage ± 25 V

ID (1)
Drain current (continuous) at TC = 25 °C 18 A
ID (1)
Drain current (continuous) at TC = 100 °C 12 A
IDM (2) Drain current (pulsed) 72 (1) A
PTOT Total dissipation at TC = 25 °C 30 48 W
dv/dt (3)
Peak diode recovery voltage slope 15 V/ns
dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns
Insulation withstand voltage (RMS) from all three leads to
VISO 2500 3500 V
external heat sink (t = 1 s; TC = 25 °C)
Tstg Storage temperature
- 55 to 150 °C
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 18 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
4. VDS ≤ 480 V

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220FP,
TO-3PF
I2PAKFP

Rthj-case Thermal resistance junction-case max 4.2 2.6 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not repetitive (pulse width

IAR 3.5 A
limited by Tjmax)
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
EAS 180 mJ
VDD=50)

DocID024026 Rev 6 3/18

Electrical characteristics STF24N60M2, STFI24N60M2, STFW24N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS VGS = 0, ID = 1 mA 600 V
breakdown voltage
VGS = 0, VDS = 600 V 1 μA
Zero gate voltage
IDSS VGS = 0,
drain current 100 μA
VDS = 600 V, TC=125 °C
Gate-body leakage
IGSS VDS = 0, VGS = ± 25 V ±10 μA
current
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 3 4 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 9 A 0.168 0.19 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1060 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 55 - pF
VGS = 0
Crss Reverse transfer
- 2.2 - pF
capacitance
Equivalent output
Coss eq.(1) VDS = 0 to 480 V, VGS = 0 - 258 - pF
capacitance
Intrinsic gate
RG f = 1 MHz, ID=0 - 7 - Ω
resistance
Qg Total gate charge VDD = 480 V, ID = 18 A, - 29 - nC
Qgs Gate-source charge VGS = 10 V - 6 - nC
Qgd Gate-drain charge (see Figure 16) - 12 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

4/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 14 - ns

VDD = 300 V, ID = 9 A,
tr Rise time - 9 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off delay time (see Figure 16 and 21) - 60 - ns
tf Fall time - 15 - ns

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD(1) Source-drain current - 18 A

ISDM (1),(2)
Source-drain current (pulsed) - 72 A
VSD (3)
Forward on voltage ISD = 18 A, VGS = 0 - 1.6 V
trr Reverse recovery time - 332 ns
ISD = 18 A, di/dt = 100 A/μs
Qrr Reverse recovery charge - 4 μC
VDD = 60 V (see Figure 18)
IRRM Reverse recovery current - 24 A
trr Reverse recovery time ISD = 18 A, di/dt = 100 A/μs - 450 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 5.5 μC
IRRM Reverse recovery current (see Figure 18) - 25 A
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

DocID024026 Rev 6 5/18

Electrical characteristics STF24N60M2, STFI24N60M2, STFW24N60M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP and Figure 3. Thermal impedance for TO-220FP and
I2PAKFP I2PAKFP
AM15462v1
ID
(A)
on is
RD rea

10
)
ax a
m his

S(

10µs
by in t
ite tion

100µs
Lim era
d
Op

1 1ms

10ms
Tj=150°C
0.1 Tc=25°C
Single
pulse
0.01
0.1 1 10 100 VDS(V)

Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF
GIPG030420141648SA GIPG030420141703SA
ID K
(A) δ=0.5

0.2
100
0.1
is
10µs 10 -1
ea
a r (on)
10 i s
t h RD
S 0.05
in ax 100µs
n
a tio y m 0.02
er d b
Op mite 1ms
1 Li 0.01 c

10ms 10 -2
Tj=150°C
Tc=25°C Single pulse
0.1 Single
pulse
0.01 10 -3
0.1 1 10 100 VDS(V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s)

Figure 6. Output characteristics Figure 7. Transfer characteristics

AM15470v1 AM15469v1
ID ID
(A) VGS= 8, 9, 10 V (A)
VGS= 7 V VDS= 17 V
40 40
35 35
30 30
25 VGS= 6 V 25

20 20
15 15
10 VGS= 5 V 10
5 5
VGS= 4 V
0 0
0 5 10 15 20 VDS(V) 0 2 4 6 8 10 VGS(V)

6/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance

AM15471v1 RDS(on) AM15465v1
VGS VDS
(V) (Ω)
VDD=480 V (V)
12 VDS VGS=10V
600
ID=18 A 0.176
10 500

0.172
8 400

6 300
0.168

4 200
0.164
2 100

0 0 0.160
0 5 10 15 20 25 30 Qg(nC) 0 4 8 12 16 ID(A)

Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
AM15665v1 AM15472v1
C Eoss
(pF) (µJ)
8

7
1000 Ciss
6

5
100
4
Coss
3
10 2

Crss 1
1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 600 VDS(V)

Figure 12. Normalized gate threshold voltage vs Figure 13. Normalized on-resistance vs
temperature temperature
VGS(th) AM15473v1 AM15464v1
RDS(on)
(norm) (norm)
ID = 250 µA
1.1 2.3 ID = 9 A
2.1 VGS = 10 V
1.0
1.9
1.7
0.9
1.5
1.3
0.8
1.1

0.7 0.9
0.7
0.6 0.5
-50 -25 0 25 50 75 100 TJ(°C) -50 -25 0 25 50 75 100 TJ(°C)

DocID024026 Rev 6 7/18

Electrical characteristics STF24N60M2, STFI24N60M2, STFW24N60M2

Figure 14. Source-drain diode forward Figure 15. Normalized V(BR)DSS vs temperature
characteristics
AM15468v1 AM15466v1
VSD V(BR)DSS
(norm)
(V)
1.11
1.4
1.09 ID = 1mA
1.2 TJ=-50°C 1.07
1 1.05
0.8 1.03
1.01
0.6
TJ=150°C 0.99
TJ=25°C
0.4
0.97
0.2 0.95

0 0.93
0 2 4 6 8 10 12 14 16 ISD(A) -50 -25 0 25 50 75 100 TJ(°C)

8/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Test circuits

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
9%5'66 ton toff
tr tdoff tf
9' tdon

90% 90%
,'0
10%
,' 10% VDS
0

9'' 9'' 90%

VGS

$0Y 0 10% AM01473v1

DocID024026 Rev 6 9/18

Package mechanical data STF24N60M2, STFI24N60M2, STFW24N60M2

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

10/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Package mechanical data

4.1 TO-220FP, STF24N60M2

Figure 22. TO-220FP drawing

7012510_Rev_K_B

DocID024026 Rev 6 11/18

Package mechanical data STF24N60M2, STFI24N60M2, STFW24N60M2

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

12/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Package mechanical data

4.2 I2PAKFP, STFI24N60M2

Figure 23. I2PAKFP (TO-281) drawing

REV!

DocID024026 Rev 6 13/18

Package mechanical data STF24N60M2, STFI24N60M2, STFW24N60M2

Table 10. I2PAKFP (TO-281) mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
B 2.50 2.70
D 2.50 2.75
D1 0.65 0.85
E 0.45 0.70
F 0.75 1.00
F1 1.20
G 4.95 - 5.20
H 10.00 10.40
L1 21.00 23.00
L2 13.20 14.10
L3 10.55 10.85
L4 2.70 3.20
L5 0.85 1.25
L6 7.30 7.50

14/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Package mechanical data

4.3 TO-3PF, STFW24N60M2

Figure 24. TO-3PF drawing

7627132_D

DocID024026 Rev 6 15/18

Package mechanical data STF24N60M2, STFI24N60M2, STFW24N60M2

Table 11. TO-3PF mechanical data

mm
Dim.
Min. Typ. Max.

A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80

16/18 DocID024026 Rev 6

STF24N60M2, STFI24N60M2, STFW24N60M2 Revision history

5 Revision history

Table 12. Document revision history

Date Revision Changes

10-Dec-2012 1 First release.

Added MOSFET dv/dt ruggedness in Table 2: Absolute maximum
20-Dec-2012 2
ratings.
14-Jan-2013 3 Modified: Figure 16, 17
– Modified: Figure 16, 17, 18 and 19
28-May-2013 4
– Minor text changes
– Modified: Rthj-case value in Table 3
28-Feb-2014 5 – Modified: Figure 12
– Minor text changes
– Added: TO-3PF package
07-Apr-2014 6 – Added: Section 4.3: TO-3PF, STFW24N60M2
– Minor text changes

DocID024026 Rev 6 17/18

 STF24N60M2, STFI24N60M2, STFW24N60M2

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2014 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com

18/18 DocID024026 Rev 6