STB11NM60T4, STP11NM60

Datasheet

N-channel 600 V, 0.4 Ω typ., 11 A, MDmesh™ II Power MOSFETs in D²PAK and

TO-220 packages

Features
TAB VDSS
TAB Order codes RDS(on) max. ID Package
(@ TJmax)

3
STB11NM60T4 D²PAK
1 650 V 0.45 Ω 11 A
3 STP11NM60 TO-220
D2PAK TO-220 2
1
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
D(2, TAB)

Applications
• Switching applications
G(1)

Description
These devices are N-channel Power MOSFETs developed using the second
S(3) generation of MDmesh™ technology. These revolutionary Power MOSFETs
AM01475v1_noZen
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.

Product status link

STB11NM60T4
STP11NM60

Product summary

Order code STB11NM60T4

Marking B11NM60
Package D²PAK
Packing Tape and reel
Order code STP11NM60
Marking P11NM60
Package TO-220
Packing Tube

DS3653 - Rev 7 - October 2018 www.st.com

For further information contact your local STMicroelectronics sales office.
 STB11NM60T4, STP11NM60
Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Gate-source voltage 600 V

VGS Gate- source voltage ±30 V

ID Drain current (continuous) at TC = 25 °C 11

A
ID Drain current (continuous) at TC= 100 °C 7

IDM (1) Drain current (pulsed) 44 A

PTOT Total dissipation at TC = 25 °C 160 W

dv/dt (2) Peak diode recovery voltage slope 15 V/ns

Tstg Storage temperature range

-65 to 150 °C
Tj Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Table 2. Thermal data

Value
Symbol Parameter Unit
D2PAK TO-220

Rthj-case Thermal resistance junction-case 0.78

Rthj-amb Thermal resistance junction-ambient 62.5 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb 35

1. When mounted on 1inch² FR-4 board, 2 oz Cu.

Table 3. Avalanche characteristics

Symbol Parameter Value Unit

IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax) 5.5 A

EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 350 mJ

DS3653 - Rev 7 page 2/21

 STB11NM60T4, STP11NM60
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 μA 600 V

VGS = 0 V, VDS = 600 V 1 µA

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V,
10 µA
TC = 125 °C(1)

IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A 0.4 0.45 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1000 - pF

Coss Output capacitance VDS= 25 V, f = 1 MHz, VGS = 0 V - 230 - pF

Crss Reverse transfer capacitance - 25 - pF

Coss eq. (1) Equivalent output capacitance VDS = 0 V to 480 V, VGS = 0 V - 100 - pF

RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω

Qg Total gate charge VDD = 480 V, ID = 11 A, - 30 - nC

Qgs Gate-source charge VGS = 0 to 10 V - 10 - nC

(see Figure 12. Test circuit for gate
Qgd Gate-drain charge - 15 - nC
charge behavior)

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 300 V, ID = 5.5 A, - 20 - ns

RG = 4.7 Ω, VGS = 10 V
(see Figure 11. Test circuit for
tr Rise time resistive load switching times and - 20 - ns
Figure 16. Switching time
waveform)
tr(Voff) Off-voltage rise time VDD = 480 V, ID = 11 A, - 6 - ns

tf Fall time RG = 4.7 Ω, VGS = 10 V (see - 11 - ns

Figure 13. Test circuit for inductive
load switching and diode recovery
tc Cross-over time times and Figure 16. Switching - 19 - ns
time waveform)

DS3653 - Rev 7 page 3/21

 STB11NM60T4, STP11NM60
Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 11 A

ISDM(1) Source-drain current (pulsed) - 44 A

VSD (2) VGS = 0 V, ISD = 11 A

Forward on voltage - 1.5 V

trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 390 ns

Qrr Reverse recovery charge VDD = 100 V - 3.8 μC

(see Figure 13. Test circuit for
IRRM Reverse recovery current inductive load switching and diode - 19.5 A
recovery times)
trr Reverse recovery time ISD = 11 A, di/dt = 100 A/µs, - 570 ns

Qrr Reverse recovery charge VDD = 100 V, Tj = 150 °C - 5.7 μC

(see Figure 13. Test circuit for
IRRM Reverse recovery current inductive load switching and diode - 20 A
recovery times)

1. Pulse width is limited by safe operating area

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%

DS3653 - Rev 7 page 4/21

 STB11NM60T4, STP11NM60
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 4. Transfer characteristics

Figure 3. Output characteristics

Figure 5. Normalized gate threshold voltage vs

Figure 6. Static drain-source on-resistance
temperature

DS3653 - Rev 7 page 5/21

 STB11NM60T4, STP11NM60
Electrical characteristics (curves)

Figure 7. Normalized on-resistance vs temperature Figure 8. Gate charge vs gate-source voltage

Figure 9. Capacitance variations Figure 10. Source-drain diode forward characteristics

DS3653 - Rev 7 page 6/21

 STB11NM60T4, STP11NM60
Test circuits

3 Test circuits

Figure 11. Test circuit for resistive load switching times Figure 12. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 13. Test circuit for inductive load switching and

Figure 14. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 16. Switching time waveform

Figure 15. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%

ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS3653 - Rev 7 page 7/21

 STB11NM60T4, STP11NM60
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.

DS3653 - Rev 7 page 8/21

 STB11NM60T4, STP11NM60
D²PAK (TO-263) type A package information

4.1 D²PAK (TO-263) type A package information

Figure 17. D²PAK (TO-263) type A package outline

0079457_25

DS3653 - Rev 7 page 9/21

 STB11NM60T4, STP11NM60
D²PAK (TO-263) type A package information

Table 8. D²PAK (TO-263) type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
A1 0.03 0.23
b 0.70 0.93
b2 1.14 1.70
c 0.45 0.60
c2 1.23 1.36
D 8.95 9.35
D1 7.50 7.75 8.00
D2 1.10 1.30 1.50
E 10.00 10.40
E1 8.30 8.50 8.70
E2 6.85 7.05 7.25
e 2.54
e1 4.88 5.28
H 15.00 15.85
J1 2.49 2.69
L 2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R 0.40
V2 0° 8°

DS3653 - Rev 7 page 10/21

 STB11NM60T4, STP11NM60
D²PAK packing information

4.2 D²PAK packing information

Figure 18. D²PAK tape outline

DS3653 - Rev 7 page 11/21

 STB11NM60T4, STP11NM60
D²PAK packing information

Figure 19. D²PAK reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 9. D²PAK tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS3653 - Rev 7 page 12/21

 STB11NM60T4, STP11NM60
D²PAK (TO-263) type B package information

4.3 D²PAK (TO-263) type B package information

Figure 20. D²PAK (TO-263) type B package outline

0079457_25_B

DS3653 - Rev 7 page 13/21

 STB11NM60T4, STP11NM60
D²PAK (TO-263) type B package information

Table 10. D²PAK (TO-263) type B mechanical data

mm
Dim.
Min. Typ. Max.

A 4.36 4.56
A1 0 0.25
b 0.70 0.90
b1 0.51 0.89
b2 1.17 1.37
b3 1.36 1.46
c 0.38 0.694
c1 0.38 0.534
c2 1.19 1.34
D 8.60 9.00
D1 6.90 7.50
E 10.15 10.55
E1 8.10 8.70
e 2.54 BSC
H 15.00 15.60
L 1.90 2.50
L1 1.65
L2 1.78
L3 0.25
L4 4.78 5.28

DS3653 - Rev 7 page 14/21

 STB11NM60T4, STP11NM60
D²PAK type B packing information

Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint

4.4 D²PAK type B packing information

Figure 22. D²PAK type B tape outline

DS3653 - Rev 7 page 15/21

 STB11NM60T4, STP11NM60
D²PAK type B packing information

Figure 23. D²PAK type B reel outline

40mm min.
access hole
at slot location
B

D C

N
A

Tape slot G measured

in core for at hub
Full radius tape start
2.5mm min.width

AM06038v1

Table 11. D²PAK type B reel mechanical data

mm
Dim.
Min. Max.

A 330
B 1.5
C 12.8 13.2
D 20.2
G 24.4 26.4
N 100
T 30.4

DS3653 - Rev 7 page 16/21

 STB11NM60T4, STP11NM60
TO-220 type A package information

4.5 TO-220 type A package information

Figure 24. TO-220 type A package outline

0015988_typeA_Rev_21

DS3653 - Rev 7 page 17/21

 STB11NM60T4, STP11NM60
TO-220 type A package information

Table 12. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95

DS3653 - Rev 7 page 18/21

 STB11NM60T4, STP11NM60

Revision history

Table 13. Document revision history

Date Version Changes

09-Sep-2004 1 First release

10-Jun-2005 2 Typing error, wrong description
26-Jul-2006 3 The document has been reformatted, no content change
31-Aug-2006 4 Typo mistake on order code
21-Dec-2006 5 Various changes on “Test conditions” for Table 5. and Table 6.
12-Jan-2007 6 Order code has been corrected
The part numbers STB11NM60-1 and STP11NM60FP have been moved to a
separate datasheet and the document has been updated accordingly.
Modified Table 1. Absolute maximum ratings, Table 2. Thermal data and
Table 5. Dynamic.
01-Oct-2018 7
Modified Section 2.1 Electrical characteristics (curves).
Updated Section 4 Package information.
Minor text changes.

DS3653 - Rev 7 page 19/21

 STB11NM60T4, STP11NM60
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3 D²PAK (TO-263) type B package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.4 D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

DS3653 - Rev 7 page 20/21

 STB11NM60T4, STP11NM60

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

DS3653 - Rev 7 page 21/21