STF13NK50Z

STP13NK50Z, STW13NK50Z
N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247
Zener-protected SuperMESHTM Power MOSFET

Features
RDS(on)
Type VDSS ID Pw
max
STF13NK50Z 500 V <0.48 Ω 11 A 30 W 3 3
2
STP13NK50Z 500 V <0.48 Ω 11 A 140 W 1 1
2

STW13NK50Z 500 V <0.48 Ω 11 A 140 W TO-220 TO-220FP

■ Extremely high dv/dt capability

■ 100% avalanche tested
3
2
■ Gate charge minimized 1

■ Very low intrinsic capacitances TO-247

■ Very good manufacturing repeatability

Applications Figure 1. Internal schematic diagram

■ Switching application

Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs.

Table 1. Device summary

Order code Marking Package Packaging

STF13NK50Z F13NK50Z TO-220FP Tube

STP13NK50Z P13NK50Z TO-220 Tube
STW13NK50Z W13NK50Z TO-247 Tube

March 2009 Rev 2 1/15

www.st.com 15
Contents STx13NK50Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STx13NK50Z Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220, TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0) 500 V

VGS Gate-source voltage ± 30 V
Drain current (continuous)
ID 11 11(1) A
at TC = 25 °C
Drain current (continuous)
ID 6.93 6.93(1) A
at TC=100 °C
IDM(2) Drain current (pulsed) 44 44(1) A
PTOT Total dissipation at TC = 25 °C 140 30 W
Derating factor 1.12 0.24 W/°C
dv/dt(3) Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS)
VISO from all three leads to external heat sin 2500 V
(t=1 s;TC= 25 °C)
TJ Operating junction temperature
-55 to 150 °C
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 11 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V(BR)DSS

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-247 TO-220FP

Rthj-case Thermal resistance junction-case max 0.89 4.17 °C/W

Thermal resistance junction-ambient
Rthj-a 62.5 50 62.5 °C/W
max
Maximum lead temperature for
Tl 300 °C
soldering purpose

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 11 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 240 mJ
(starting TJ = 25 °C, ID = IAR, VDD= 50 V)

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Electrical characteristics STx13NK50Z

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1 mA, VGS= 0 500 V
voltage
VDS = Max rating,
Zero gate voltage drain 1 µA
IDSS VDS = Max rating,
current (VGS = 0) 50 µA
TC =125 °C
Gate body leakage current
IGSS VGS = ± 20 V ±10 µA
(VDS = 0)
VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3 3.75 4.5 V
Static drain-source on
RDS(on) VGS= 10 V, ID= 6.5 A 0.4 0.48 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
gfs Forward transconductance VDS =15 V, ID = 6.5 A 8.5 S
Input capacitance
Ciss 1600 pF
Output capacitance VDS =25 V, f=1 MHz,
Coss 200 pF
Reverse transfer VGS=0
Crss 45 pF
capacitance
Equivalent output
Coss eq(2). VGS=0, VDS =0 V to 400 V 50 pF
capacitance
Qg Total gate charge VDD=400 V, ID = 13 A 47 nC
Qgs Gate-source charge VGS =10 V 9 nC
Qgd Gate-drain charge Figure 20 28 nC
Rg Intrinsic gate resistance f= 1 MHz open drain 2.3 Ω
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 18 ns

tr VDD=400 V, ID=6.5 A,
Rise time 23 ns
RG=4.7 Ω, VGS=10 V
td(off) Turn-off delay time Figure 19 61 ns
tf Fall time 24 ns

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STx13NK50Z Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 11 A

(1)
ISDM Source-drain current (pulsed) 44 A
VSD (2) Forward on voltage ISD=11 A, VGS=0 1.6 V
ISD=6.5 A,
trr Reverse recovery time 380 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge 3.4 µC
VDD=40 V, Tj=25 °C
IRRM Reverse recovery current 18 A
Figure 21
ISD=6.5 A,
trr Reverse recovery time 425 ns
di/dt = 100 A/µs,
Qrr Reverse recovery charge 3.9 µC
VDD=40 V, Tj=150 °C
IRRM Reverse recovery current 18.5 A
Figure 21
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 9. Gate-source Zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Igs=±1 mA
BVGSO (1) Gate-source breakdown voltage 30 V
(open drain)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

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Electrical characteristics STx13NK50Z

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

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STx13NK50Z Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

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Electrical characteristics STx13NK50Z

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature temperature

Figure 16. Source-drain diode forward Figure 17. Normalized BVDSS vs temperature
characteristics

Figure 18. Maximum avalanche energy vs

temperature

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STx13NK50Z Test circuit

3 Test circuit

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit
resistive load

Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test
switching and diode recovery times circuit

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

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Package mechanical data STx13NK50Z

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

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STx13NK50Z Package mechanical data

TO-220 mechanical data

mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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Package mechanical data STx13NK50Z

TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.
A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.5
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

L7
E

A
B

D
Dia
L6 L5

F1 F2
F

H G
G1

L2 L4

L3
7012510_Rev_J

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STx13NK50Z Package mechanical data

TO-247 Mechanical data

Dim. mm.
Min. Typ Max.
A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50

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Revision history STx13NK50Z

5 Revision history

Table 10. Revision history

Date Revision Changes

07-Aug-2007 1 First version

19-Mar-2009 2 Update ID value test condition in Table 6.

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STx13NK50Z

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