STB8NM60D

STP8NM60D
N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK
Fast Diode MDmesh™ Power MOSFET

General features
Type VDSS RDS(on) ID PTOT
STB8NM60D 600V < 1.0Ω 8A 100W
STP8NM60D 600V < 1.0Ω 8A 100W

■ High dv/dt and avalanche capabilities 3 3

2 1
■ 100% avalanche rated 1

TO-220 D²PAK
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Fast internal recovery diode

Description
The FDmesh™ associates all advantages of Internal schematic diagram
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters

Applications
The MDmesh™ family is very suitable for
increasing power density of high voltage
converters allowing system miniaturization and
higher efficiencies.

Order codes
Sales Type Marking Package Packaging
STB8NM60D B8NM60D D²PAK TAPE & REEL
STP8NM60D P8NM60D TO-220 TUBE

February 2006 Rev2 1/13

www.st.com 13
Electrical ratings STB8NM60D - STP8NM60D

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-Source Voltage (V GS = 0) 600 V

VDGR Drain-gate Voltage (R GS = 20kΩ) 600 V
VGS Gate-Source Voltage ±30 V
ID Drain Current (continuous) at T C = 25°C 8 A
ID Drain Current (continuous) at T C=100°C 5 A
IDM (1) Drain Current (pulsed) 32 A
PTOT Total Dissipation at T C = 25°C 100 W
Derating Factor 0.8 W/°C
dv/dt(2) Peak Diode Recovery voltage slope 20 V/ns
TJ Operating Junction Temperature
-65 to 150 °C
Tstg Storage Temperature
1. Pulse width limited by safe operating area
2. ISD ≤5A, di/dt ≤400A/µs, VDD =80%V(BR)DSS

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case Max 1.25 °C/W

Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

Table 3. Avalanche data

Symbol Parameter Value Unit

Avalanche current, repetitive or not

IAR 2.5 A
repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting
EAS 200 mJ
Tj=25°C, ID=IAR, VDD=50V)

2/13 Rev2
STB8NM60D - STP8NM60D Electrical characteristics

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test Condictions Min. Typ. Max. Unit

Drain-Source Breakdown
V(BR)DSS ID = 250µA, V GS= 0 600 V
Voltage

Zero Gate Voltage Drain VDS = Max Rating, 1 µA

IDSS
Current (VGS = 0) VDS = Max Rating,Tc=125°C 10 µA

Gate Body Leakage Current

IGSS VGS = ±30V, VDS = 0 ±100 nA
(V DS = 0)

VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 3 4 5 V

Static Drain-Source On
RDS(on) VGS= 10V, ID=2.5A 0.9 1 Ω
Resistance

Table 5. Dynamic
Symbol Parameter Test Condictions Min. Typ. Max. Unit

VDS =ID(on) x R DS(on)max

gfs (1) Forward Transconductance 2.4 S
ID = 2.5A

Ciss Input Capacitance

380 pF
Output Capacitance
Coss VDS =25V, f=1 MHz, VGS=0 170 pF
Reverse Transfer
Crss 14 pF
Capacitance
Equivalent Ouput
Coss eq.(2) VGS=0, V DS =0V to 480V 60 pF
Capacitance
Qg Total Gate Charge VDD=400V, ID = 5A 15 18 nC
Qgs Gate-Source Charge VGS =10V 4 nC
Qgd Gate-Drain Charge (see Figure 13) 8 nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
increases from 0 to 80% VDSS

Rev2 3/13
Electrical characteristics STB8NM60D - STP8NM60D

Table 6. Switching times

Symbol Parameter Test Condictions Min. Typ. Max. Unit

td(on) Turn-on Delay Time 13 ns

VDD =300V, ID=2.5A,
tr Rise Time 10 ns
RG=4.7Ω, VGS=10V
td(off) Turn-off Delay Time 26 ns
(see Figure 12)
tf Fall Time 8 ns

td(off) Turn-off Delay Time VDD =480V, ID=5A, 8 ns

tf Fall Time RG=4.7Ω, VGS=10V 8 ns
tc Cross-over Time (see Figure 12) 14 ns

Table 7. Source drain diode

Symbol Parameter Test Condictions Min. Typ. Max. Unit

ISD Source-drain Current

5 A
(1) Source-drain Current
ISDM 20 A
(pulsed)

VSD(2) Forward on Voltage ISD=5A, V GS=0 1.5 V

trr Reverse Recovery Time 107 ns

ISD=5A, di/dt = 100A/µs,
Qrr Reverse Recovery Charge 330 nC
VDD=50 V, Tj=25°C
IRRM Reverse Recovery Current 6 A

trr Reverse Recovery Time 178 ns

ISD=5A, di/dt = 100A/µs,
Qrr Reverse Recovery Charge 640 nC
VDD=50 V, Tj=150°C
IRRM Reverse Recovery Current 7 A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/13 Rev2
STB8NM60D - STP8NM60D Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

Rev2 5/13
Electrical characteristics STB8NM60D - STP8NM60D

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature temperature

Figure 11. Source-drain diode forward

characteristics

6/13 Rev2
STB8NM60D - STP8NM60D Test circuit

3 Test circuit

Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit
resistive load

Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

Rev2 7/13
Package mechanical data STB8NM60D - STP8NM60D

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

8/13 Rev2
STB8NM60D - STP8NM60D Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

Rev2 9/13
Package mechanical data STB8NM60D - STP8NM60D

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º
3

10/13 Rev2
STB8NM60D - STP8NM60D Packaging mechanical data

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

TAPE MECHANICAL DATA BASE QTY BULK QTY

1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type

Rev2 11/13
Revision history STB8NM60D - STP8NM60D

6 Revision history

Table 8. Document revision history

Date Revision Changes

13-Jan-2006 1 Initial release.

15-Feb-2006 2 Modified Description on first page

12/13 Rev2
STB8NM60D - STP8NM60D Revision history

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Rev2 13/13