STP62NS04Z

N-channel clamped 12.5mΩ - 62A - TO-220

Fully protected MESH OVERLAY™ Power MOSFET

General features
VDSS
Type RDS(on) ID
(@Tjmax)

STP62NS04Z Clamped <0.015Ω 62A

■ 100% avalanche tested

3
■ Low capacitance and gate charge 2
1
■ 175° C maximum junction temperature TO-220

Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology Internal schematic diagram
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STP62NS04Z P62NS04Z TO-220 Tube

October 2006 Rev 5 1/12

www.st.com 12
Contents STP62NS04Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuit ................................................ 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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STP62NS04Z Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) Clamped V

VGS Gate-source voltage Clamped V
ID Drain current (continuous) at TC = 25°C 62 A
ID Drain current (continuous) at TC=100°C 37.5 A
IDG Drain gate current (continuous) ± 50
IGS Gate sourcecurrent (continuous) ± 50
IDM (1) Drain current (pulsed) 248 A
PTOT Total dissipation at TC = 25°C 110 W
Derating factor 0.74 W/°C
(2)
dv/dt Peak diode recovery voltage slope 8 V/ns
(3)
EAS Single Pulse Avalanche Energy 500 mJ
VESD ESD (HBM - C = 100pF, R = 1.5 kΩ) 8 V
TJ Operating junction temperature
-55 to 175 °C
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤40A, di/dt ≤100A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting TJ = 25 oC, ID = 20A, VDD = 20V

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case Max 1.36 °C/W

RthJA Thermal resistance junction-ambient Max 62.5 °C/W
Maximum lead temperature for soldering
Tl 300 °C
purpose

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Electrical characteristics STP62NS04Z

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 1mA, VGS= 0 33 V
voltage
Zero gate voltage drain
IDSS VDS = 16V 10 µA
current (VGS = 0)

Gate body leakage current

IGSS VGS = ±10V 10 µA
(VDS = 0)

Gate-Source
VGSS IGS = 100 µA 18 V
Breakdown Voltage
VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
Static drain-source on
RDS(on) VGS = 10V, ID = 30A 12.5 15 mΩ
resistance

Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS = 15V, ID = 30A 20 S

Ciss Input capacitance

1330 pF
Coss Output capacitance VDS =25V, f = 1 MHz,
420 pF
Reverse transfer VGS = 0
Crss 135 pF
capacitance
Qg Total gate charge 34 47 nC
VDD = 20V, ID = 40A
Qgs Gate-source charge 10 nC
VGS =10V
Qgd Gate-drain charge 11.5 nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time 13 ns

VDD= 20V, ID= 20A,
tr Rise time 104 ns
RG=4.7Ω, VGS = 10V
td(off) Turn-off delay time 41 ns
Figure 13 on page 8
tf Fall time 42 ns

tr(Voff) Off-voltage rise time Vclamp = 30V, ID = 40A 30 ns

tf Fall time RG = 4.7Ω, VGS = 10V 54 ns
tc Cross-over time Figure 13 on page 8 90 ns

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STP62NS04Z Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

ISD Source-drain current 62 A

ISDM(1) Source-drain current (pulsed) 248 A

VSD(2) Forward on voltage ISD = 62A, VGS = 0 1.5 V

ISD = 40A,
trr Reverse recovery time 45 ns
di/dt = 100A/µs,
Qrr Reverse recovery charge 65 µC
VDD = 20V, TJ = 150°C
IRRM Reverse recovery current 2.9 A
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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Electrical characteristics STP62NS04Z

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance

Figure 3. Output characterisics Figure 4. Transfer characteristics

Figure 5. Transconductance Figure 6. Static drain-source on resistance

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STP62NS04Z Electrical characteristics

Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs

vs temperature temperature

Figure 11. Source-drain diode forward Figure 12. Normalized BVDSS vs temperature
characteristics

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Test circuit STP62NS04Z

3 Test circuit

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load

Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test
switching and diode recovery times circuit

Figure 17. Unclamped inductive waveform

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STP62NS04Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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Package mechanical data STP62NS04Z

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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STP62NS04Z Revision history

5 Revision history

Table 7. Revision history

Date Revision Changes

21-Jun-2004 2 Preliminary datasheet

22-Aug-2005 3 Complete document with curves
21-Jan-2006 4 New ECOPAK label
02-Oct-2006 5 New template, no content change

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 STP62NS04Z

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