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    STC6NF30V: N-CHANNEL 30V - 0.020 - 6A Tssop8 2.5V-Drive Stripfet™ Ii Power Mosfet

    Uploaded by

    Şener Mutlu
    This document provides specifications for the STC6NF30V N-channel 30V MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 30V, on-resistance of 0.020 ohms at 4.5V gate drive and 0.025 ohms at 2.5V gate drive, and continuous drain current of 6A. The MOSFET uses a unique "Single Feature Size" process to achieve high density and low on-resistance in a small TSSOP8 package suitable for surface mount applications like DC motor drives and DC-DC converters.

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    STC6NF30V: N-CHANNEL 30V - 0.020 - 6A Tssop8 2.5V-Drive Stripfet™ Ii Power Mosfet

    Uploaded by

    Şener Mutlu
    170 views8 pages
    This document provides specifications for the STC6NF30V N-channel 30V MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 30V, on-resistance of 0.020 ohms at 4.5V gate drive and 0.025 ohms at 2.5V gate drive, and continuous drain current of 6A. The MOSFET uses a unique "Single Feature Size" process to achieve high density and low on-resistance in a small TSSOP8 package suitable for surface mount applications like DC motor drives and DC-DC converters.

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    6N30V

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    This document provides specifications for the STC6NF30V N-channel 30V MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 30V, on-resistance of 0.020 ohms at 4.5V gate drive and 0.025 ohms at 2.5V gate drive, and continuous drain current of 6A. The MOSFET uses a unique "Single Feature Size" process to achieve high density and low on-resistance in a small TSSOP8 package suitable for surface mount applications like DC motor drives and DC-DC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    170 views8 pages

    STC6NF30V: N-CHANNEL 30V - 0.020 - 6A Tssop8 2.5V-Drive Stripfet™ Ii Power Mosfet

    Uploaded by

    Şener Mutlu
    This document provides specifications for the STC6NF30V N-channel 30V MOSFET from STMicroelectronics. Key specifications include a maximum drain-source voltage of 30V, on-resistance of 0.020 ohms at 4.5V gate drive and 0.025 ohms at 2.5V gate drive, and continuous drain current of 6A. The MOSFET uses a unique "Single Feature Size" process to achieve high density and low on-resistance in a small TSSOP8 package suitable for surface mount applications like DC motor drives and DC-DC converters.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 8

    STC6NF30V

    N-CHANNEL 30V - 0.020 Ω - 6A TSSOP8


    2.5V-DRIVE STripFET™ II POWER MOSFET

    TYPE VDSS RDS(on) ID

    < 0.025 Ω ( @ 4.5 V )


    STC6NF30V 30 V 6A
    < 0.030 Ω ( @ 2.5 V )
    ■ TYPICAL RDS(on) = 0.020 Ω @ 4.5 V
    ■ TYPICAL RDS(on) = 0.025 Ω @ 2.5 V
    ■ ULTRA LOW THRESHOLD
    GATE DRIVE (2.5 V)
    ■ STANDARD OUTLINE FOR EASY
    AUTOMATED SURFACE MOUNT ASSEMBLY
    ■ DOUBLE DICE IN COMMON DRAIN TSSOP8
    CONFIGURATION

    DESCRIPTION
    This Power MOSFET is the latest development of
    STMicroelectronis unique "Single Feature Size™" INTERNAL SCHEMATIC DIAGRAM
    strip-based process. The resulting transistor
    shows extremely high packing density for low on-
    resistance.

    APPLICATIONS
    ■ DC MOTOR DRIVE

    ■ DC-DC CONVERTERS

    ■ BATTERY SAFETY UNIT FOR NOMADIC

    EQUIPMENT
    ■ POWER MANAGEMENT IN

    PORTABLE/DESKTOP PCs

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Unit
    VDS Drain-source Voltage (VGS = 0) 30 V
    VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V
    VGS Gate- source Voltage ± 12 V
    ID Drain Current (continuous) at TC = 25°C 6 A
    ID Drain Current (continuous) at TC = 100°C 3.8 A
    IDM(•) Drain Current (pulsed) 24 A
    Ptot Total Dissipation at TC = 25°C 1.5 W
    (•) Pulse width limited by safe operating area.

    February 2003 1/8


    STC6NF30V

    THERMAL DATA
    Rthj-pcb Thermal Resistance Junction-PCB (**) Max 100 °C/W
    Rthj-pcb Thermal Resistance Junction-PCB (*) Max 83.5 °C/W
    Tj Operating Junction Temperature -55 to 150 °C
    Tstg Storage temperature -55 to 150 °C

    (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec
    (**) When Mounted on minimum recommended footprint

    ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)


    OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    V(BR)DSS Drain-source ID = 250 µA, VGS = 0 30
    V
    Breakdown Voltage

    IDSS Zero Gate Voltage VDS = Max Rating 1 µA


    Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

    IGSS Gate-body Leakage VGS = ± 12 V ±100 nA


    Current (VDS = 0)

    ON (*)
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V

    RDS(on) Static Drain-source On VGS = 4.5 V ID = 3 A 0.020 0.025 Ω


    Resistance VGS = 2.5 V ID = 3 A 0.025 0.030 Ω

    DYNAMIC
    Symbol Parameter Test Conditions Min. Typ. Max. Unit

    gfs (*) Forward Transconductance VDS = 10 V ID = 6 A 18 S

    Ciss Input Capacitance VDS = 25V f = 1 MHz, VGS = 0 800 pF


    Coss Output Capacitance 180 pF
    Crss Reverse Transfer 32 pF
    Capacitance

    2/8
    STC6NF30V

    ELECTRICAL CHARACTERISTICS (continued)


    SWITCHING ON
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    td(on) Turn-on Delay Time VDD = 15 V ID = 3 A 20 ns
    tr Rise Time RG = 4.7 Ω VGS = 2.5 V 25 ns
    (Resistive Load, Figure 1)
    Qg Total Gate Charge VDD= 15V ID= 6A VGS=2.5V 6.8 9 nC
    Qgs Gate-Source Charge (see test circuit, Figure 2) 2.0 nC
    Qgd Gate-Drain Charge 3.4 nC

    SWITCHING OFF
    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    td(off) Turn-off Delay Time VDD = 15 V ID = 3 A 32 ns
    tf Fall Time RG = 4.7Ω, VGS = 2.5 V 13 ns
    (Resistive Load, Figure 1)

    SOURCE DRAIN DIODE


    Symbol Parameter Test Conditions Min. Typ. Max. Unit
    ISD Source-drain Current 6 A
    ISDM (•) Source-drain Current (pulsed) 24 A

    VSD (*) Forward On Voltage ISD = 6 A VGS = 0 1.2 V

    trr Reverse Recovery Time ISD = 6 A di/dt = 100A/µs 25 ns


    Qrr Reverse Recovery Charge VDD = 15 V Tj = 150°C 21 nC
    IRRM Reverse Recovery Current (see test circuit, Figure 3) 1.7 A
    (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
    (•)Pulse width limited by safe operating area.

    Safe Operating Area. Thermal Impedance.

    3/8
    STC6NF30V

    Output Characteristics Transfer Characteristics

    Transconductance Static Drain-source On Resistance

    Gate Charge vs Gate-source Voltage Capacitance Variations

    4/8
    STC6NF30V

    Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

    Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature

    Thermal resistance and max power

    5/8
    STC6NF30V

    Fig. 1: Switching Times Test Circuits For Resistive Fig. 2: Gate Charge test Circuit
    Load

    Fig. 3: Test Circuit For Diode Recovery Behaviour

    6/8
    STC6NF30V

    TSSOP8 MECHANICAL DATA

    mm. inch.
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 1.05 1.20 0.041 0.047
    A1 0.05 0.15 0.002 0.006
    A2 0.80 1.05 0.032 0.041
    b 0.19 0.30 0.008 0.012
    c 0.090 0.20 0.003 0.007
    D 2.90 3.10 0.114 0.122
    E 6.20 6.60 0.240 0.260
    E1 4.30 4.50 0.170 0.177
    e 0.65 0.025
    L 0.45 0.75 0.018 0.030
    L1 1.00 0.039
    k 0o 8o 0.192 0.208

    7/8
    STC6NF30V

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
    by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
    to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
    authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

    The ST logo is registered trademark of STMicroelectronics


     2002 STMicroelectronics - All Rights Reserved

    All other names are the property of their respective owners.

    STMicroelectronics GROUP OF COMPANIES


    Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
    http://www.st.com

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