TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557

DEVICES LEVELS

2N6798 2N6798U JAN

JANTX
JANTXV

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions Symbol Value Unit
Drain – Source Voltage VDS 200 Vdc
Gate – Source Voltage VGS ± 20 Vdc
Continuous Drain Current
ID1 5.5 Adc
TC = +25°C
Continuous Drain Current
ID2 3.5 Adc
TC = +100°C
(1)
Max. Power Dissipation Ptl 25 W
(2)
Drain to Source On State Resistance Rds(on) 0.4 Ω
Operating & Storage Temperature Top, Tstg -55 to +150 °C

Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C

(2) VGS = 10Vdc, ID = 3.5A
TO-205AF
(formerly TO-39)
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions Symbol Min. Max. Unit

Drain-Source Breakdown Voltage
V(BR)DSS 200 Vdc
VGS = 0V, ID = 1mAdc

Gate-Source Voltage (Threshold)

VDS ≥ VGS, ID = 0.25mA VGS(th)1 2.0 4.0
Vdc
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VGS(th)2 1.0
VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)3 5.0

Gate Current
VGS = ±20V, VDS = 0V IGSS1 ±100 nAdc
VGS = ±20V, VDS = 0V, Tj = +125°C IGSS2 ±200

Drain Current U – 18 LCC

VGS = 0V, VDS = 160V IDSS1 25 µAdc
VGS = 0V, VDS = 160V, Tj = +125°C IDSS2 0.25 mAdc

Static Drain-Source On-State Resistance

VGS = 10V, ID = 3.5A pulsed rDS(on)1 0.4 Ω
VGS = 10V, ID = 5.5A pulsed rDS(on)2 0.42 Ω
Tj = +125°C
VGS = 10V, ID = 3.5A pulsed rDS(on)3 0.75 Ω
Diode Forward Voltage
VSD 1.4 Vdc
VGS = 0V, ID = 5.5A pulsed

T4-LDS-0049 Rev. 2 (092059) Page 1 of 4

 TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Gate Charge:
Qg(on) 42.07
On-State Gate Charge
VGS = 10V, ID = 5.5A Qgs 5.29 nC
Gate to Source Charge
VDS = 100V Qgd 28.11
Gate to Drain Charge

SWITCHING CHARACTERISTICS

Parameters / Test Conditions Symbol Min. Max. Unit

Switching time tests:
Turn-on delay time ID = 5.5A, VGS = 10Vdc, td(on) 30
Rinse time Gate drive impedance = 7.5Ω, tr 50 ns
Turn-off delay time VDD = 77Vdc td(off) 50
Fall time tf 40

di/dt ≤ 100A/µs, VDD ≤ 50V,

Diode Reverse Recovery Time trr 500 ns
IF = 5.5A

T4-LDS-0049 Rev. 2 (092059) Page 2 of 4

 TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557

PACKAGE DIMENSIONS

Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .305 .355 7.75 9.02
CH .160 .180 4.07 4.57
HD .335 .370 8.51 9.39
h .009 .041 0.23 1.04
J .028 .034 0.72 0.86 2
k .029 .045 0.74 1.14 3
LD .016 .021 0.41 0.53 7, 8
LL .500 .750 12.7 19.05 7, 8
LS .200 TP 5.08 TP 6
LU .016 .019 0.41 0.48 7, 8
L1 .050 1.27 7, 8
L2 .250 6.35 7, 8
P .070 1.78 5
Q .050 1.27 4
r .010 0.25 9
α 45° TP 45° TP 6

NOTES:

1 Dimensions are in inches. Millimeters are given for general information only.
2 Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
3 Dimension k measured from maximum HD.
4 Outline in this zone is not controlled.
5 Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007
(0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
7 All three leads.
8 Radius (r) applies to both inside corners of tab.
9 Drain is electrically connected to the case.
10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

* FIGURE 1. Physical dimensions for TO-205AF.

T4-LDS-0049 Rev. 2 (092059) Page 3 of 4

 TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com

N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/557

NOTES: Dimensions
1 Dimensions are in inches. Ltr Inches Millimeters
2 Millimeters are given for general information only. Min Max Min Max
3 In accordance with ASME Y14.5M, diameters are equivalent to
BL .345 .360 8.77
φx symbology.
4 Ceramic package only. BW .280 .295 7.11
CH .095 .115 2.41
LL1 .040 .055 1.02
LL2 .055 .065 1.40
LS .050 BSC 1.27 BSC
LS1 .025 BSC 0.635 BSC
LS2 .008 BSC 0.203 BSC
LW .020 .030 0.51 0.76
Q1 .105 REF 2.67 REF
Q2 .120 REF 3.05 REF
Q3 .045 .055 1.14 1.40
TL .070 .080 1.78 2.03
TW .120 .130 3.05 3.30

* FIGURE 2. Physical dimensions for LCC.

T4-LDS-0049 Rev. 2 (092059) Page 4 of 4